公开(公告)号：US20110117724A1

公开(公告)日：2011-05-19

申请号：US13013296

申请日：2011-01-25

Applicant: Chih-Hsin KO ,  Yee-Chia YEO ,  Wen-Chin LEE ,  Chung-Hu GE

Inventor： Chih-Hsin KO ,  Yee-Chia YEO ,  Wen-Chin LEE ,  Chung-Hu GE

IPC: H01L21/762 ,  H01L21/763

CPC classification number: H01L21/823878 ,  H01L21/76224 ,  H01L21/823412 ,  H01L21/823481 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/7846 ,  H01L29/7848

Abstract: A method and system is disclosed for forming an improved isolation structure for strained channel transistors. In one example, an isolation structure is formed comprising a trench filled with a nitrogen-containing liner and a gap filler. The nitrogen-containing liner enables the isolation structure to reduce compressive strain contribution to the channel region.

Abstract translation: 公开了一种用于形成用于应变通道晶体管的改进的隔离结构的方法和系统。 在一个示例中，形成包括填充有含氮衬里和间隙填料的沟槽的隔离结构。 含氮衬垫使隔离结构能够减小对通道区域的压应变贡献。