公开(公告)号：US08743669B2

公开(公告)日：2014-06-03

申请号：US13406155

申请日：2012-02-27

申请人： Yaohua Liu ,  Chia-Feng Lin ,  Wenhua Liu

发明人： Yaohua Liu ,  Chia-Feng Lin ,  Wenhua Liu

IPC分类号： G11B7/00

CPC分类号： G11B27/329 ,  G11B2220/2537

摘要： An optical disc drive and a method of reading an optical disc are disclosed. The drive includes an I/O port, an optical pickup module and a format conversion unit. The I/O port couples a host to receive a read command of a host terminal file system format. The optical pickup module accesses the optical disc which contains data of a first file system format. The format conversion unit coupled between the I/O port and the optical pickup module includes a mapping information generation module, a memory module and a read-command processing module. The mapping information generation module controls the optical pickup module to access data and thereby to generate mapping information. The memory module stores the mapping information. The read-command processing module controls the optical pickup module to access the optical disc according to the read command by referring to the mapping information.

摘要翻译： 公开了一种光盘驱动器和一种读取光盘的方法。 驱动器包括I / O端口，光学拾取模块和格式转换单元。 I / O端口将主机连接以接收主机终端文件系统格式的读取命令。 光学拾取模块访问包含第一文件系统格式的数据的光盘。 耦合在I / O端口和光学拾取模块之间的格式转换单元包括映射信息生成模块，存储器模块和读取命令处理模块。 映射信息生成模块控制光学拾取模块访问数据，从而生成映射信息。 存储器模块存储映射信息。 读取命令处理模块通过参考映射信息来控制光学拾取模块根据读取命令访问光盘。

公开(公告)号：US20130112987A1

公开(公告)日：2013-05-09

申请号：US13365217

申请日：2012-02-02

申请人： Yi-Keng Fu ,  Ren-Hao Jiang ,  Yen-Hsiang Fang ,  Bo-Chun Chen ,  Chia-Feng Lin

发明人： Yi-Keng Fu ,  Ren-Hao Jiang ,  Yen-Hsiang Fang ,  Bo-Chun Chen ,  Chia-Feng Lin

IPC分类号： H01L33/32

CPC分类号： H01L33/22 ,  H01L33/0075 ,  H01L33/0079

摘要： A light emitting diode including a GaN substrate, a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first electrode, and a second electrode is provided. The GaN substrate has a first surface and a second surface opposite thereto, and the second surface has a plurality of protuberances, the height of the protuberance is h μm and the distribution density of the protuberance on the second surface is d cm−2, wherein 9.87×107≦h2d, and h≦1.8. The first type semiconductor is disposed on the first surface of the GaN substrate. The light emitting layer is disposed on a partial region of the first semiconductor layer, and the wavelength of the light emitted by the light emitting layer is from 375 nm to 415 nm. The second semiconductor layer is disposed on the light emitting layer.

摘要翻译： 提供了包括GaN衬底，第一类型半导体层，发光层，第二类型半导体层，第一电极和第二电极的发光二极管。 GaN衬底具有与其相对的第一表面和第二表面，并且第二表面具有多个突起，突起的高度为hmum，并且第二表面上的突起的分布密度为dcm-2，其中 9.87×107@h2d和h@1.8。 第一类型半导体被布置在GaN衬底的第一表面上。 发光层设置在第一半导体层的部分区域上，由发光层发射的光的波长为375nm〜415nm。 第二半导体层设置在发光层上。