公开(公告)号：US11205658B2

公开(公告)日：2021-12-21

申请号：US16137628

申请日：2018-09-21

申请人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.

发明人： Bo Xu ,  Ping Yan ,  Chuan Yang ,  Jing Gao ,  Zongliang Huo ,  Lu Zhang

IPC分类号： H01L29/51 ,  H01L27/11582 ,  H01L21/02 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L27/11565 ,  H01L29/10 ,  H01L21/28 ,  H01L21/768

摘要： Embodiments of a three-dimensional (3D) memory device with a corrosion-resistant composite spacer and method for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack disposed on the substrate and including a plurality of conductor/dielectric layer pairs, a plurality of memory strings each extending vertically through the memory stack, a slit contact disposed laterally between the plurality of memory strings, and a composite spacer disposed laterally between the slit contact and at least one of the memory strings. The composite spacer includes a first silicon oxide film, a second silicon oxide film, and a dielectric film disposed laterally between the first silicon oxide film and the second silicon oxide film.