RTP process chamber pressure control
    12.
    发明授权
    RTP process chamber pressure control 失效
    RTP处理室压力控制

    公开(公告)号:US06828234B2

    公开(公告)日:2004-12-07

    申请号:US10108779

    申请日:2002-03-26

    IPC分类号: H01L2144

    CPC分类号: H01L21/67115 H01L21/67109

    摘要: A method that includes flowing an inert gas into an interior of a single wafer process chamber to create a pressure in the interior that is greater than an ambient pressure; and maintaining the greater interior pressure during a wafer transfer with the single wafer process chamber.

    摘要翻译: 一种方法,其包括将惰性气体流入单个晶片处理室的内部,以在内部产生大于环境压力的压力; 并且在用单晶片处理室进行晶片传送期间保持较大的内部压力。