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    System and method for social networking
    6.
    发明授权
    System and method for social networking 有权
    社交网络的系统和方法

    公开(公告)号：US08856229B2

    公开(公告)日：2014-10-07

    申请号：US12693510

    申请日：2010-01-26

    Applicant: Shyam Sundar Ramamurthy ,  Manish Satyapal Gupta ,  Himanshu Verma ,  Shyam Krishnamurthy ,  Srinivas Devarakonda

    Inventor： Shyam Sundar Ramamurthy ,  Manish Satyapal Gupta ,  Himanshu Verma ,  Shyam Krishnamurthy ,  Srinivas Devarakonda

    IPC: G06F15/16

    CPC classification number: H04L67/306 ,  G06Q10/10

    Abstract: Methods, systems and computer program products are provided for social networking. In one method, a network builder receives a digital object from the user. The digital object contains information associated with the user. The network builder extracts the information associated with the user from the digital object. The network builder further access the strength of relationships between the user and a plurality of other users, each associated with one or more social networks. The relationships strength is extracted based at least in part on the extracted information. The network builder then adds the user to one or more social networks based on the information associated with the user and the strength of the relationships between the user and the plurality of other users.

    Abstract translation: 为社交网络提供方法，系统和计算机程序产品。 在一种方法中，网络构建器从用户接收数字对象。 数字对象包含与用户相关联的信息。 网络构建器从数字对象提取与用户相关联的信息。 网络构建器进一步访问用户与多个其他用户之间的关系的强度，每个与一个或多个社交网络相关联。 至少部分地基于所提取的信息提取关系强度。 然后，网络构建器基于与用户相关联的信息和用户与多个其他用户之间的关系的强度将用户添加到一个或多个社交网络。

    Managing thermal budget in annealing of substrates
    7.
    发明授权
    Managing thermal budget in annealing of substrates 有权
    管理基板退火中的热预算

    公开(公告)号：US08314369B2

    公开(公告)日：2012-11-20

    申请号：US12212214

    申请日：2008-09-17

    Applicant: Stephen Moffatt ,  Abhilash J. Mayur ,  Sundar Ramamurthy ,  Joseph Ranish ,  Aaron Hunter

    Inventor： Stephen Moffatt ,  Abhilash J. Mayur ,  Sundar Ramamurthy ,  Joseph Ranish ,  Aaron Hunter

    IPC: H01L21/26 ,  F27B5/14 ,  F27D13/00

    CPC classification number: H01L21/67109 ,  H01L21/67115

    Abstract: A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.

    Abstract translation: 提供了一种处理基板的方法和装置。 衬底位于热处理室中的支撑件上。 电磁辐射被引向衬底以退火衬底的一部分。 其他电磁辐射被引向衬底以预热衬底的一部分。 预热减少了预热区域和退火区域之间的边界处的热应力。 根据具体实施方案的需要，预期任何数量的退火和预热区域具有变化的形状和温度分布。 可以使用任何方便的电磁辐射源，例如激光器，加热灯，白光灯或闪光灯。

    DUAL PLASMA SOURCE, LAMP HEATED PLASMA CHAMBER
    8.
    发明申请
    DUAL PLASMA SOURCE, LAMP HEATED PLASMA CHAMBER 审中-公开
    双等离子体源，灯加热等离子体室

    公开(公告)号：US20120222618A1

    公开(公告)日：2012-09-06

    申请号：US13193453

    申请日：2011-07-28

    Applicant: Christopher Olsen ,  Canfeng Lai ,  Sundar Ramamurthy ,  Johanes S. Swenberg ,  Wei Liu

    Inventor： Christopher Olsen ,  Canfeng Lai ,  Sundar Ramamurthy ,  Johanes S. Swenberg ,  Wei Liu

    IPC: C23C16/50 ,  C23C16/505 ,  C23C16/511

    CPC classification number: C23C16/517 ,  H01J37/32082 ,  H01J37/32357

    Abstract: Methods and apparatus for processing semiconductor substrates are described. A processing chamber includes a substrate support with an in-situ plasma source, which may be an inductive, capacitive, microwave, or millimeter wave source, facing the substrate support and a radiant heat source, which may be a bank of thermal lamps, spaced apart from the substrate support. The support may be between the in-situ plasma source and the radiant heat source, and may rotate. A method or processing a substrate includes forming an oxide layer by exposing the substrate to a plasma generated in a process chamber, performing a plasma nitridation process on the substrate in the chamber, thermally treating the substrate using a radiant heat source disposed in the chamber while exposing the substrate to oxygen radicals formed outside the chamber, and forming an electrode by exposing the substrate to a plasma generated in the chamber.

    Abstract translation: 描述了用于处理半导体衬底的方法和设备。 处理室包括具有原位等离子体源的衬底支撑件，其可以是面向衬底支撑件的电感，电容，微波或毫米波源，辐射热源可以是一排热灯，间隔开 除了基板支撑。 支撑件可以在原位等离子体源和辐射热源之间，并且可以旋转。 一种方法或处理衬底包括通过将衬底暴露于在处理室中产生的等离子体来形成氧化物层，在腔室中的衬底上进行等离子体氮化处理，使用设置在腔室中的辐射热源热处理衬底，同时 将衬底暴露于室外形成的氧自由基，并通过将衬底暴露于腔室中产生的等离子体而形成电极。

    Method of thermally treating silicon with oxygen
    9.
    发明申请
    Method of thermally treating silicon with oxygen 失效
    用氧热处理硅的方法

    公开(公告)号：US20110250764A1

    公开(公告)日：2011-10-13

    申请号：US13165502

    申请日：2011-06-21

    Applicant: Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

    Inventor： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

    IPC: H01L21/316

    CPC classification number: H01L21/67115 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/67109

    Abstract: A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.

    Abstract translation: 一种用于半导体集成电路中用于氧化材料的方法和装置，例如用于氧化硅以形成电介质栅极。 臭氧发生器能够产生至少70％的臭氧流。 臭氧通过水冷却的注射器进入室内， 其他气体如氢气以提高氧化速率，稀释气体如氮气或O2通过另一个入口进入腔室。 该室被保持在低于20托的低压，并且衬底有利地保持在低于800℃的温度。或者，氧化可以在包括基座加热器和喷头气体喷射器的LPCVD室中执行， 座。

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