公开(公告)号：US08338202B2

公开(公告)日：2012-12-25

申请号：US12407290

申请日：2009-03-19

申请人： Takako Chinone ,  Shinichi Tanaka ,  Sho Iwayama ,  Yusuke Yokobayashi ,  Satoshi Tanaka

发明人： Takako Chinone ,  Shinichi Tanaka ,  Sho Iwayama ,  Yusuke Yokobayashi ,  Satoshi Tanaka

IPC分类号： H01L21/00

CPC分类号： H01L21/2007 ,  H01L33/0079

摘要： In a method for manufacturing a semiconductor device, a first conductivity type semiconductor layer and a second conductivity type semiconductor layer are sequentially grown on a growth substrate. Then, an electrode layer is formed on the second conductivity type semiconductor layer. Then, a support body is adhered to the electrode layer by providing at least one adhesive layer therebetween. Finally, at least a part of the growth substrate is removed. In this case, the adhesive layer is removable from the electrode layer.

摘要翻译： 在半导体器件的制造方法中，在生长衬底上依次生长第一导电型半导体层和第二导电型半导体层。 然后，在第二导电型半导体层上形成电极层。 然后，通过在它们之间提供至少一个粘合剂层将支撑体附着到电极层。 最后，去除生长衬底的至少一部分。 在这种情况下，粘合剂层可从电极层移除。

公开(公告)号：US20090239324A1

公开(公告)日：2009-09-24

申请号：US12407290

申请日：2009-03-19

申请人： Takako Chinone ,  Shinichi Tanaka ,  Sho Iwayama ,  Yusuke Yokobayashi ,  Satoshi Tanaka

发明人： Takako Chinone ,  Shinichi Tanaka ,  Sho Iwayama ,  Yusuke Yokobayashi ,  Satoshi Tanaka

IPC分类号： H01L21/304 ,  H01L21/3205

CPC分类号： H01L21/2007 ,  H01L33/0079

摘要： In a method for manufacturing a semiconductor device, a first conductivity type semiconductor layer and a second conductivity type semiconductor layer are sequentially grown on a growth substrate. Then, an electrode layer is formed on the second conductivity type semiconductor layer. Then, a support body is adhered to the electrode layer by providing at least one adhesive layer therebetween. Finally, at least a part of the growth substrate is removed. In this case, the adhesive layer is removable from the electrode layer.

摘要翻译： 在半导体器件的制造方法中，在生长衬底上依次生长第一导电型半导体层和第二导电型半导体层。 然后，在第二导电型半导体层上形成电极层。 然后，通过在它们之间提供至少一个粘合剂层将支撑体附着到电极层。 最后，去除生长衬底的至少一部分。 在这种情况下，粘合剂层可从电极层移除。