公开(公告)号：US08338202B2

公开(公告)日：2012-12-25

申请号：US12407290

申请日：2009-03-19

申请人： Takako Chinone ,  Shinichi Tanaka ,  Sho Iwayama ,  Yusuke Yokobayashi ,  Satoshi Tanaka

发明人： Takako Chinone ,  Shinichi Tanaka ,  Sho Iwayama ,  Yusuke Yokobayashi ,  Satoshi Tanaka

IPC分类号： H01L21/00

CPC分类号： H01L21/2007 ,  H01L33/0079

摘要： In a method for manufacturing a semiconductor device, a first conductivity type semiconductor layer and a second conductivity type semiconductor layer are sequentially grown on a growth substrate. Then, an electrode layer is formed on the second conductivity type semiconductor layer. Then, a support body is adhered to the electrode layer by providing at least one adhesive layer therebetween. Finally, at least a part of the growth substrate is removed. In this case, the adhesive layer is removable from the electrode layer.

摘要翻译： 在半导体器件的制造方法中，在生长衬底上依次生长第一导电型半导体层和第二导电型半导体层。 然后，在第二导电型半导体层上形成电极层。 然后，通过在它们之间提供至少一个粘合剂层将支撑体附着到电极层。 最后，去除生长衬底的至少一部分。 在这种情况下，粘合剂层可从电极层移除。

公开(公告)号：US20090239324A1

公开(公告)日：2009-09-24

申请号：US12407290

申请日：2009-03-19

申请人： Takako Chinone ,  Shinichi Tanaka ,  Sho Iwayama ,  Yusuke Yokobayashi ,  Satoshi Tanaka

发明人： Takako Chinone ,  Shinichi Tanaka ,  Sho Iwayama ,  Yusuke Yokobayashi ,  Satoshi Tanaka

IPC分类号： H01L21/304 ,  H01L21/3205

CPC分类号： H01L21/2007 ,  H01L33/0079

摘要： In a method for manufacturing a semiconductor device, a first conductivity type semiconductor layer and a second conductivity type semiconductor layer are sequentially grown on a growth substrate. Then, an electrode layer is formed on the second conductivity type semiconductor layer. Then, a support body is adhered to the electrode layer by providing at least one adhesive layer therebetween. Finally, at least a part of the growth substrate is removed. In this case, the adhesive layer is removable from the electrode layer.

摘要翻译： 在半导体器件的制造方法中，在生长衬底上依次生长第一导电型半导体层和第二导电型半导体层。 然后，在第二导电型半导体层上形成电极层。 然后，通过在它们之间提供至少一个粘合剂层将支撑体附着到电极层。 最后，去除生长衬底的至少一部分。 在这种情况下，粘合剂层可从电极层移除。

公开(公告)号：US20110042708A1

公开(公告)日：2011-02-24

申请号：US12855038

申请日：2010-08-12

申请人： Noriko NIHEI ,  Shinichi Tanaka ,  Yusuke Yokobayashi

发明人： Noriko NIHEI ,  Shinichi Tanaka ,  Yusuke Yokobayashi

IPC分类号： H01L33/62

CPC分类号： H01L33/0079 ,  H01L33/405

摘要： In an optical semiconductor device including a semiconductor laminated body including at least a light emitting layer, a first metal body including at least one first metal layer formed on the semiconductor laminated body, a support substrate, a second metal body including at least one second metal layer formed on the support substrate, and at least one adhesive layer formed in a surface side of at least one of the first and second metal bodies, the semiconductor laminated body is coupled to the support substrate by applying a pressure-welding bonding process upon the adhesive layer to form a eutectic alloy layer between the first and second metal bodies. At least one of the first and second metal layers has a triple structure formed by two tight portions and a coarse portion sandwiched by the tight portions.

摘要翻译： 在包括至少包括发光层的半导体层叠体的光学半导体器件中，包括形成在半导体层叠体上的至少一个第一金属层的第一金属体，支撑基板，包括至少一个第二金属 形成在所述支撑基板上的层，以及形成在所述第一金属体和所述第二金属体中的至少一个的表面侧的至少一个粘合层，所述半导体层叠体通过对所述支撑基板施加压接工序而与所述支撑基板连接 粘合剂层，以在第一和第二金属体之间形成共晶合金层。 第一和第二金属层中的至少一个具有由两个紧密部分形成的三重结构和由紧密部分夹在中间的粗糙部分。

公开(公告)号：US20100120228A1

公开(公告)日：2010-05-13

申请号：US12615277

申请日：2009-11-10

申请人： Tatsuma Saito ,  Shinichi Tanaka ,  Yusuke Yokobayashi

发明人： Tatsuma Saito ,  Shinichi Tanaka ,  Yusuke Yokobayashi

IPC分类号： H01L21/78 ,  H01L21/302

CPC分类号： H01L33/0095 ,  B23K26/0604 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  Y10S438/977

摘要： A manufacturing method for semiconductor devices having a metal support is provided. The method in one aspect includes growing a semiconductor film on a growth substrate; forming a metal support on a surface of said semiconductor film opposite to the growth substrate; thereafter removing said growth substrate from said semiconductor film; forming a street groove reaching said metal support in the said semiconductor film; radiating a first laser beam onto said metal support to form a first dividing groove having a substantially flat bottom in said metal support; and radiating a second laser beam onto said metal support to form a second dividing groove that penetrates though a portion of said metal support that remains where the first divining groove is formed.

摘要翻译： 提供了具有金属支撑件的半导体器件的制造方法。 一方面的方法包括在生长衬底上生长半导体膜; 在与所述生长基板相对的所述半导体膜的表面上形成金属载体; 然后从所述半导体膜去除所述生长衬底; 在所述半导体膜中形成到达所述金属支撑件的街道槽; 将第一激光束辐射到所述金属支撑件上以形成在所述金属支撑件中具有基本平坦的底部的第一分隔槽; 以及将第二激光束辐射到所述金属支撑件上以形成第二分隔槽，该第二分割槽穿过所述金属支撑件的保持在形成所述第一凹槽的位置的部分。

公开(公告)号：US08597969B2

公开(公告)日：2013-12-03

申请号：US12855038

申请日：2010-08-12

申请人： Noriko Nihei ,  Shinichi Tanaka ,  Yusuke Yokobayashi

发明人： Noriko Nihei ,  Shinichi Tanaka ,  Yusuke Yokobayashi

IPC分类号： H01L21/20

CPC分类号： H01L33/0079 ,  H01L33/405

摘要： In an optical semiconductor device including a semiconductor laminated body including at least a light emitting layer, a first metal body including at least one first metal layer formed on the semiconductor laminated body, a support substrate, a second metal body including at least one second metal layer formed on the support substrate, and at least one adhesive layer formed in a surface side of at least one of the first and second metal bodies, the semiconductor laminated body is coupled to the support substrate by applying a pressure-welding bonding process upon the adhesive layer to form a eutectic alloy layer between the first and second metal bodies. At least one of the first and second metal layers has a triple structure formed by two tight portions and a coarse portion sandwiched by the tight portions.

摘要翻译： 在包括至少包括发光层的半导体层叠体的光学半导体器件中，包括形成在半导体层叠体上的至少一个第一金属层的第一金属体，支撑基板，包括至少一个第二金属 形成在所述支撑基板上的层，以及形成在所述第一金属体和所述第二金属体中的至少一个的表面侧的至少一个粘合层，所述半导体层叠体通过对所述支撑基板施加压接工序而与所述支撑基板连接 粘合剂层，以在第一和第二金属体之间形成共晶合金层。 第一和第二金属层中的至少一个具有由两个紧密部分形成的三重结构和由紧密部分夹在中间的粗糙部分。

公开(公告)号：US08211781B2

公开(公告)日：2012-07-03

申请号：US12615277

申请日：2009-11-10

申请人： Tatsuma Saito ,  Shinichi Tanaka ,  Yusuke Yokobayashi

发明人： Tatsuma Saito ,  Shinichi Tanaka ,  Yusuke Yokobayashi

IPC分类号： H01L21/461

CPC分类号： H01L33/0095 ,  B23K26/0604 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  Y10S438/977

摘要： A manufacturing method for semiconductor devices having a metal support is provided. The method in one aspect includes growing a semiconductor film on a growth substrate; forming a metal support on a surface of said semiconductor film opposite to the growth substrate; thereafter removing said growth substrate from said semiconductor film; forming a street groove reaching said metal support in the said semiconductor film; radiating a first laser beam onto said metal support to form a first dividing groove having a substantially flat bottom in said metal support; and radiating a second laser beam onto said metal support to form a second dividing groove that penetrates through a portion of said metal support that remains where the first dividing groove is formed.

摘要翻译： 提供了具有金属支撑件的半导体器件的制造方法。 一方面的方法包括在生长衬底上生长半导体膜; 在与所述生长基板相对的所述半导体膜的表面上形成金属载体; 然后从所述半导体膜去除所述生长衬底; 在所述半导体膜中形成到达所述金属支撑件的街道槽; 将第一激光束辐射到所述金属支撑件上以形成在所述金属支撑件中具有基本平坦的底部的第一分隔槽; 并且将第二激光束辐射到所述金属支撑件上以形成第二分隔槽，该第二分隔槽穿过保留在形成第一分隔槽的部分所述金属支撑件。

公开(公告)号：US07927985B2

公开(公告)日：2011-04-19

申请号：US12613622

申请日：2009-11-06

申请人： Shinichi Tanaka ,  Tatsuya Saito ,  Yusuke Yokobayashi

发明人： Shinichi Tanaka ,  Tatsuya Saito ,  Yusuke Yokobayashi

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L33/0095 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0079

摘要： A growth substrate is removed from a semiconductor film, and a surface of the semiconductor film exposed by removing the growth substrate is flattened. The semiconductor film along device division lines are partially etched by dry etching to form grooves in a lattice that form streets, not reaching the metal support in the semiconductor film. The surface of the semiconductor film at the bottom of the grooves is flattened. The semiconductor film along the device division lines at the bottom of the grooves are further etched by wet etching to expose the metal support at the bottom of the grooves to finish the streets.

摘要翻译： 从半导体膜去除生长衬底，通过去除生长衬底而暴露的半导体膜的表面变平。 沿着器件分割线的半导体膜通过干蚀刻被部分蚀刻，以形成形成街道的格子中的凹槽，而不到达半导体膜中的金属支撑。 凹槽底部的半导体膜的表面变平。 通过湿蚀刻进一步蚀刻沿着凹槽底部的器件分割线的半导体膜，以暴露凹槽底部的金属支撑以完成街道。

公开(公告)号：US20070176188A1

公开(公告)日：2007-08-02

申请号：US11606379

申请日：2006-11-30

申请人： Shinichi Tanaka ,  Naochica Horio ,  Munehiro Kato ,  Satoshi Tanaka

发明人： Shinichi Tanaka ,  Naochica Horio ,  Munehiro Kato ,  Satoshi Tanaka

IPC分类号： H01L33/00

CPC分类号： H01L33/46 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A semiconductor light emitting device includes a semiconductor layer having a recess extending downwardly from a top surface thereof along a pattern of a closed line so that said recess defines and encloses a region of the semiconductor layer that emits light, said semiconductor layer having a downward slope in at least a portion of its side end face located outside the closed line pattern of said recess; a first electrode on said downward slope of the side end face of the semiconductor layer and electrically in contact with a portion of said semiconductor layer, wherein said first electrode downwardly reflects light that is emitted by said semiconductor layer and that reaches the first electrode; and a second electrode electrically in contact with a portion of said semiconductor layer located inside the closed line pattern of said recess.

摘要翻译： 半导体发光器件包括半导体层，该半导体层具有从其顶表面沿着封闭线的图案向下延伸的凹槽，使得所述凹部限定和包围发射光的半导体层的区域，所述半导体层具有向下的斜面 在其侧端面的至少一部分位于所述凹部的闭合线图案之外; 所述半导体层的侧端面的所述向下斜面上的第一电极与所述半导体层的一部分电接触，其中所述第一电极向下反射由所述半导体层发射并到达所述第一电极的光; 以及与位于所述凹部的闭合线图案内的所述半导体层的一部分电接触的第二电极。

公开(公告)号：US07939838B2

公开(公告)日：2011-05-10

申请号：US11606379

申请日：2006-11-30

申请人： Shinichi Tanaka ,  Naochica Horio ,  Munehiro Kato ,  Satoshi Tanaka

发明人： Shinichi Tanaka ,  Naochica Horio ,  Munehiro Kato ,  Satoshi Tanaka

IPC分类号： H01L33/00

CPC分类号： H01L33/46 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A semiconductor light emitting device includes a semiconductor layer having a recess extending downwardly from a top surface thereof along a pattern of a closed line so that said recess defines and encloses a region of the semiconductor layer that emits light, said semiconductor layer having a downward slope in at least a portion of its side end face located outside the closed line pattern of said recess; a first electrode on said downward slope of the side end face of the semiconductor layer and electrically in contact with a portion of said semiconductor layer, wherein said first electrode downwardly reflects light that is emitted by said semiconductor layer and that reaches the first electrode; and a second electrode electrically in contact with a portion of said semiconductor layer located inside the closed line pattern of said recess.

摘要翻译： 半导体发光器件包括半导体层，该半导体层具有从其顶表面沿着封闭线的图案向下延伸的凹槽，使得所述凹部限定和包围发射光的半导体层的区域，所述半导体层具有向下的斜面 在其侧端面的至少一部分位于所述凹部的闭合线图案之外; 所述半导体层的侧端面的所述向下斜面上的第一电极与所述半导体层的一部分电接触，其中所述第一电极向下反射由所述半导体层发射并到达所述第一电极的光; 以及与位于所述凹部的闭合线图案内的所述半导体层的一部分电接触的第二电极。

公开(公告)号：US08949205B2

公开(公告)日：2015-02-03

申请号：US12823597

申请日：2010-06-25

申请人： Shinichi Tanaka ,  Daisuke Mori

发明人： Shinichi Tanaka ,  Daisuke Mori

IPC分类号： G06F17/30 ,  G06F9/445

CPC分类号： G06F8/65

摘要： If a ROM medium is mounted on a media drive and a request for executing an application is received from an input device, a read controlling unit controls the media drive so that the media drive reads out a patch file from the ROM media and installs the patch file on a hard disk drive. After the patch file is installed, an execution processing unit applies the installed patch file and activates the game software.

摘要翻译： 如果ROM介质被安装在介质驱动器上并且从输入设备接收到执行应用程序的请求，则读取控制单元控制介质驱动器，使得介质驱动器从ROM介质读出补丁文件并安装补丁 文件在硬盘驱动器上。 安装补丁文件后，执行处理单元应用已安装的补丁文件并激活游戏软件。