公开(公告)号：US20060181933A1

公开(公告)日：2006-08-17

申请号：US11401861

申请日：2006-04-12

Applicant: Yong-ho Ha ,  Beak-hyung Cho ,  Ji-hye Yi

Inventor： Yong-ho Ha ,  Beak-hyung Cho ,  Ji-hye Yi

IPC: G11C16/04

CPC classification number: G11C13/0069 ,  G11C7/04 ,  G11C13/0004 ,  G11C2013/0092

Abstract: In the method of programming a phase change memory cell, having a lower resistive state and a higher resistive state, to the lower resistive state, the memory cell is heated to first temperature. Subsequently, the memory cell is heated to second temperature, which is greater than the first temperature.