APPARATUS AND METHOD FOR ETCHING OPTICAL FIBER DEVICE FOR REMOVING CLADDING LIGHT

    公开(公告)号:US20230055081A1

    公开(公告)日:2023-02-23

    申请号:US17979218

    申请日:2022-11-02

    Abstract: The present invention relates to an optical fiber device for removing cladding light, an apparatus and a method for etching the same. The optical fiber device comprises: a first optical fiber section through an Nth optical fiber section arranged in sequence along a light travelling direction; and a first tapered coupling section coupling a Kth optical fiber section and a (K+1)th optical fiber section, where the Kth optical fiber section is any one of the first optical fiber section through the Nth optical fiber section and the (K+1) optical fiber section is any one of the first optical fiber section through the Nth optical fiber section adjacent to the Kth optical fiber section, wherein the Kth optical fiber section comprises: at least one first subsection and at least one second subsection alternately arranged along the light travelling direction, each of the at least one first subsection having a diameter D2K−1 and a length L2K−1; and each of the at least one second subsection having a diameter D2K and a length L2K; and a second tapered coupling section coupling the first subsection and the second subsection adjacent to the first subsection, wherein the diameter D2K−1 and the length L2K−1 of the first subsection and the diameter D2K and the length L2K of the second subsection of the Kth optical fiber section and a diameter D2K+1 and a length L2K+1 of the first subsection and a diameter D2K+2 and a length L2K+2 of the second subsection of the (K+1)th optical section satisfy D2K−1>D2K, D2K+1>D2K+2, L2K−1>L2K+1, L2K>L2K+2 and D2K−1=D2K+1, and satisfy D2K>D2K+2 for odd K and D2K

    Method and apparatus for phase unwrapping of synthetic aperture radar (SAR) interferogram based on SAR offset tracking surface displacement model

    公开(公告)号:US11543517B2

    公开(公告)日:2023-01-03

    申请号:US16627127

    申请日:2019-08-12

    Abstract: The present disclosure relates to a method and apparatus for phase unwrapping of an SAR interferogram based on an SAR offset tracking surface displacement model, in which the apparatus according to the present disclosure includes a Synthetic Aperture Radar (SAR) image acquisition unit that acquires two SAR images of a same object acquired at different times, a single look complex (SLC) image production unit that produces two SLC images corresponding to each of the two SAR images, an interferogram production unit that generates an SAR interferogram using SAR interferometry for the two SLC images, a surface displacement model production unit that produces an offset tracking surface displacement model using SAR offset tracking method for the two SLC images, an unwrapped residual interferogram generation unit that generates a residual interferogram by subtracting the SAR interferogram and the offset tracking surface displacement model, and generates an unwrapped residual interferogram by unwrapping the generated residual interferogram, and an unwrapped interferogram generation unit that generates an unwrapped SAR interferogram by adding the unwrapped residual interferogram to the offset tracking surface displacement model.

    Method of correcting gravity-induced error in quantum cryptography system, method of quantum cryptography authentification using the same, and user terminal and server

    公开(公告)号:US11489667B2

    公开(公告)日:2022-11-01

    申请号:US17141674

    申请日:2021-01-05

    Inventor: Do Yeol Ahn

    Abstract: A method of correcting gravity-induced error in quantum cryptography system, which is capable of improving accuracy when an optical cable is not installed and photons are transmitted through an artificial satellite, is disclosed. The method performed by an electronic device, comprises receiving a distance (r) to a satellite that receives polarized photon from a sender and transmits the polarized photon to a receiver, receiving an angular momentum per unit mass of the satellite (lobs), and calculating a rotation amount of the polarized photon, which is induced by a warp of space due to gravity by using the distance to the satellite and the angular momentum per unit mass of the satellite (lobs). The rotation 2Θ of the polarized photon is calculated by the following equation, sin ⁢ ⁢ Θ ⁡ ( r ) ≅ - l obs rr s ⁢ 1 - r s r , wherein ‘rs’ is the Schwarzschild radius of the Earth.

    METHOD FOR PRODUCING INDUCED PLURIPOTENT STEM CELLS USING RNA NANOPARTICLES FOR CELL TRANSFORMATION

    公开(公告)号:US20210388322A1

    公开(公告)日:2021-12-16

    申请号:US17288470

    申请日:2018-10-29

    Abstract: The present invention pertains to a method for producing induced pluripotent stem cells, and more specifically, to a method for producing induced pluripotent stem cells using RNA nanoparticles for cell transformation, wherein: cell transformation can be effectively performed without genetic modification by producing induced pluripotent stem cells using self-assembled RNA nanoparticles including at least one RNA selected from the group consisting of messenger RNA for expressing transcription factors which induce somatic cells and adult stem cells to be dedifferentiated into induced pluripotent stem cells, micro RNA facilitating the dedifferentiation process, and small interfering RNA; the production efficiency of iPSCs can be maximized by adjusting structural properties and activity; and low gene loading efficiency can be overcome by applying an infinite replication process to incorporate high concentrations of RNA in RNA nanoparticles.

    Solar cell
    208.
    发明授权

    公开(公告)号:US11177398B2

    公开(公告)日:2021-11-16

    申请号:US15042652

    申请日:2016-02-12

    Inventor: Byung-Eun Park

    Abstract: A silicon solar cell with high photoelectric conversion efficiency is disclosed. A solar cell for converting light incident from an outside into electricity according to the present invention includes a substrate, a lower electrode, a ferroelectric layer, an auxiliary electrode, a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an upper electrode. The lower electrode is formed on the substrate. The ferroelectric layer is formed on the substrate and outside the lower electrode. The auxiliary electrode is formed on the ferroelectric layer. The first conductivity-type semiconductor layer is formed on the lower electrode and the auxiliary electrode. The second conductivity-type semiconductor layer is formed on the first conductivity-type semiconductor layer, and is composed of a semiconductor of a second conductivity type opposite to a first conductivity type. The upper electrode is made of transparent conductive material, and is formed on the second conductivity-type semiconductor layer.

    Storage vessel for extremely low temperature material with cryogenic jacket

    公开(公告)号:US11137115B2

    公开(公告)日:2021-10-05

    申请号:US16252400

    申请日:2019-01-18

    Abstract: A storage vessel for an extremely low temperature material for reducing a vaporization rate by forming a plating layer at an outer surface of a discharge pipe thereof is provided. The storage vessel for an extremely low temperature material includes an inner container configured to store an extremely low temperature material of a liquefied state through a supply pipe in an inner receiving space; an outer container installed at a separated space at the outside of the inner container and having a vacuum port configured to enable the separated space to be a vacuum state; and a heat insulating member installed in a vacuum region between the inner container and the outer container to block a heat from being transferred to the inner container, wherein a discharge pipe connected to an outlet of the inner container and configured to vaporize and discharge an extremely low temperature material is disposed between the inner container and the outer container, and at an outer surface of the discharge pipe, a thermally conductive layer coated with a highly conductive material having high thermal conductivity is formed. By a such a configuration, a heat applied to an outer container can be effectively blocked from being transferred to an inner container for storing an extremely low temperature material, and by reducing a vaporization rate of the extremely low temperature material by increasing a heat transfer area of a discharge pipe, a loss rate according to vaporization of the extremely low temperature material can be reduced and a separate cheap auxiliary extremely low temperature material in addition to the extremely low temperature material can be subsidiarily used for fuel or industrial use.

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