公开(公告)号：US20060081558A1

公开(公告)日：2006-04-20

申请号：US11046660

申请日：2005-01-28

Applicant: Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

Inventor： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

IPC: C23F1/00 ,  H01L21/302

CPC classification number: H01J37/321 ,  H01J37/32082 ,  Y10S438/906

Abstract: A method of processing a workpiece includes placing the workpiece on a workpiece support pedestal in a main chamber with a gas distribution showerhead, introducing a process gas into a remote plasma source chamber and generating a plasma in the remote plasma source chamber, transporting plasma-generated species from the remote plasma source chamber to the gas distribution showerhead so as to distribute the plasma-generated species into the main chamber through the gas distribution showerhead, and applying plasma RF power into the main chamber.

Abstract translation: 一种处理工件的方法包括将工件放置在具有气体分配喷头的主室中的工件支撑基座上，将工艺气体引入远程等离子体源室并在远程等离子体源室中产生等离子体，传输等离子体产生的 从远程等离子体源室到气体分配淋浴喷头的物质，以便通过气体分配喷头将等离子体产生的物质分配到主室中，并将等离子体RF功率施加到主室中。

公开(公告)号：US20060043065A1

公开(公告)日：2006-03-02

申请号：US10929104

申请日：2004-08-26

Applicant: Douglas Buchberger ,  Daniel Hoffman ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Hiorji Hanawa ,  Kenneth Collins ,  Amir Al-Bayati

Inventor： Douglas Buchberger ,  Daniel Hoffman ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Hiorji Hanawa ,  Kenneth Collins ,  Amir Al-Bayati

IPC: B44C1/22

CPC classification number: H01L21/67109 ,  H01L21/6831

Abstract: A method of electrostatically chucking a wafer while removing heat from the wafer in a plasma reactor includes providing a polished generally continuous surface on a puck, placing the wafer on the polished surface of the puck and cooling the puck. A chucking voltage is applied to an electrode within the puck to electrostatically pull the wafer onto the surface of the puck with sufficient force to attain a selected heat transfer coefficient between contacting surfaces of the puck and wafer.

公开(公告)号：US06367412B1

公开(公告)日：2002-04-09

申请号：US09506111

申请日：2000-02-17

Applicant: Kartik Ramaswamy ,  Kwok Manus Wong ,  Ashish Bhatnagar ,  Mehran Moalem ,  Tony S. Kaushal ,  Shamouil Shamouilian

Inventor： Kartik Ramaswamy ,  Kwok Manus Wong ,  Ashish Bhatnagar ,  Mehran Moalem ,  Tony S. Kaushal ,  Shamouil Shamouilian

IPC: C23C1600

CPC classification number: H01J37/32495 ,  B01D53/8662 ,  B01D2257/2066 ,  B01D2259/818 ,  C23C16/4412 ,  Y02C20/30

Abstract: A plasma tube comprising a vacuum sealing ceramic outer tube, a porous ceramic insert disposed on the inside wall of the outer tube, and a source of high frequency radiation, for example, an RF coil wrapped around the tube, to excite gas flowing through the bore of the insert into a plasma. The invention is particularly useful as an exhaust scrubber for oxidizing exhaust gases from a semiconductor processing chamber. A catalyst may be embedded in the porous insert to promote the scrubbing reaction. The invention may also be used in an applicator of a remote plasma source.

Abstract translation: 一种等离子体管，包括真空密封陶瓷外管，设置在外管内壁上的多孔陶瓷插入件和高频辐射源，例如缠绕在管上的RF线圈，以激发流过 将插入孔插入等离子体。 本发明特别可用作用于氧化来自半导体处理室的废气的排气洗涤器。 催化剂可以嵌入多孔插入物中以促进洗涤反应。 本发明也可以用于远程等离子体源的施加器中。