公开(公告)号：US20160152926A1

公开(公告)日：2016-06-02

申请号：US15018113

申请日：2016-02-08

申请人： ADVANCED TECHNOLOGY MATERIALS, INC.

发明人： David W. Minsek ,  Melissa K. Rath ,  David D. Bernhard ,  Thomas H. Baum

IPC分类号： C11D3/30 ,  H01L21/02 ,  C11D1/72 ,  C11D11/00 ,  C11D7/32 ,  C11D7/34

CPC分类号： C11D3/30 ,  C11D1/72 ,  C11D3/044 ,  C11D3/3947 ,  C11D3/3955 ,  C11D3/3956 ,  C11D3/43 ,  C11D7/06 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/50 ,  C11D11/0047 ,  C23G1/20 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/31116 ,  H01L21/31133 ,  Y10S438/906

摘要： Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.

摘要翻译： 本文公开了一种用于半导体处理的组合物和方法。 在一个实施方案中，提供了用于去除光致抗蚀剂的湿清洁组合物。 组合物包含强碱; 氧化剂 和极性溶剂。 在另一个实施例中，提供了一种去除光致抗蚀剂的方法。 该方法包括以下步骤：施加包含约0.1至约30重量％的强碱的湿清洁组合物; 约1至约30重量％的氧化剂; 约20至约95重量％的极性溶剂; 并去除光致抗蚀剂。

公开(公告)号：US08318035B2

公开(公告)日：2012-11-27

申请号：US11812902

申请日：2007-06-22

申请人： Mark W. Kiehlbauch ,  John E. Daugherty

发明人： Mark W. Kiehlbauch ,  John E. Daugherty

IPC分类号： C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： C03C23/0075 ,  C03C15/00 ,  C03C19/00 ,  C03C2204/08 ,  Y10S438/905 ,  Y10S438/906

摘要： Methods of surface finishing a component useful for a plasma processing apparatus are provided. The component includes at least one plasma-exposed quartz glass surface. The method includes mechanically polishing, chemically etching and cleaning the plasma-exposed surface to achieve a desired surface morphology. Quartz glass sealing surfaces of the component also can be finished by the methods. Plasma-exposed surface and sealing surfaces of the same component can be finished to different surface morphologies from each other.

摘要翻译： 提供表面处理用于等离子体处理装置的部件的方法。 该组件包括至少一个等离子体暴露的石英玻璃表面。 该方法包括机械抛光，化学蚀刻和清洁等离子体暴露表面以实现期望的表面形态。 石英玻璃密封面的组件也可以通过这种方法完成。 等离子体暴露的表面和相同部件的密封表面可以被完成为不同的表面形态彼此。

公开(公告)号：US08007594B2

公开(公告)日：2011-08-30

申请号：US12834121

申请日：2010-07-12

申请人： Young Bang Lee ,  Kwang Kee Chae ,  Ok Min Moon

发明人： Young Bang Lee ,  Kwang Kee Chae ,  Ok Min Moon

IPC分类号： C23G1/02

CPC分类号： C23G1/103 ,  H01L21/02068 ,  H01L21/0209 ,  Y10S134/902 ,  Y10S438/906

摘要： A method for manufacturing a semiconductor device includes the step of conducting a cleaning process for a wafer formed with copper wiring lines to remove contaminations produced on a back surface of the wafer. The cleaning process is conducted by injecting onto the back surface of the wafer an etchant for removing contaminations and simultaneously injecting onto a front surface of the wafer a reductant containing hydrogen.

摘要翻译： 一种制造半导体器件的方法包括对由铜布线形成的晶片进行清洁处理以除去晶片背面产生的污染物的步骤。 通过在晶片的背面注入用于去除污染物的蚀刻剂并同时向晶片的前表面注入含有氢的还原剂来进行清洁过程。

公开(公告)号：US07994066B1

公开(公告)日：2011-08-09

申请号：US11871987

申请日：2007-10-13

申请人： Giovanni Capellini ,  Gianlorenzo Masini ,  Lawrence C. Gunn, III ,  Jeremy Witzens ,  Joseph W. White

发明人： Giovanni Capellini ,  Gianlorenzo Masini ,  Lawrence C. Gunn, III ,  Jeremy Witzens ,  Joseph W. White

IPC分类号： H01L21/302

CPC分类号： H01L21/02057 ,  H01L21/02046 ,  H01L21/02381 ,  H01L21/02661 ,  Y10S438/906

摘要： A method is disclosed for the cleaning of a Si surface at low temperatures. Oxide on the Si surface is brought into contact with Ge, which then sublimates off the surface. The Ge contamination remaining after the oxide removal is cleared away by an exposure to an alkali halide. The disclosed cleaning method may by used in semiconductor circuit fabrication for preparing surfaces ahead of epitaxial growth.

摘要翻译： 公开了一种在低温下清洁Si表面的方法。 使Si表面的氧化物与Ge接触，然后Ge离开表面升华。 氧化物除去后残留的Ge污染物通过暴露于碱金属卤化物而被清除。 所公开的清洁方法可以用于在外延生长之前制备表面的半导体电路制造。

公开(公告)号：US07985692B2

公开(公告)日：2011-07-26

申请号：US12018254

申请日：2008-01-23

申请人： Gurtej S. Sandhu ,  Max F. Hineman ,  Daniel A. Steckert ,  Jingyi Bai ,  Shane J. Trapp ,  Tony Schrock

发明人： Gurtej S. Sandhu ,  Max F. Hineman ,  Daniel A. Steckert ,  Jingyi Bai ,  Shane J. Trapp ,  Tony Schrock

IPC分类号： H01L21/302

CPC分类号： H01L21/76802 ,  H01L21/31116 ,  Y10S438/906

摘要： A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas. The doped plasma etching gas etches a substantially vertical contact hole through the oxide layer by doping carbon chain polymers formed along the sidewalls of the contact holes during the etching process into a conductive state. The conductive state of the carbon chain polymers reduces the charge buildup along sidewalls to prevent twisting of the contact holes by bleeding off the charge and ensuring proper alignment with active area landing regions. The etching stops at the underlying substrate.

摘要翻译： 描述了使用硬光致抗蚀剂掩模的高纵横比接触蚀刻氧化物层中的基本上垂直的接触孔的方法。 氧化物层沉积在下面的衬底上。 由碳源气体形成等离子体蚀刻气体。 掺杂剂混入气体中。 掺杂的等离子体蚀刻气体通过在蚀刻工艺期间将沿着接触孔的侧壁形成的碳链聚合物掺杂到导电状态来蚀刻通过氧化物层的基本垂直的接触孔。 碳链聚合物的导电状态减少了沿着侧壁的电荷累积，以防止通过渗出电荷并确保与有源区着陆区域的适当对准来接合孔的扭曲。 蚀刻停止在下面的基底。

公开(公告)号：US20110143543A1

公开(公告)日：2011-06-16

申请号：US13032492

申请日：2011-02-22

申请人： NIRAJ RANA ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

发明人： NIRAJ RANA ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

IPC分类号： H01L21/306

CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L21/28282 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/11807 ,  Y10S438/906 ,  Y10T29/43

摘要： Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.

摘要翻译： 一些实施例包括形成电容器的方法。 存储节点形成在材料内。 存储节点具有沿材料的侧壁。 去除一些材料以暴露侧壁的部分。 侧壁的暴露部分涂覆有未被水润湿的物质。 除去附加材料以暴露侧壁的未涂覆区域。 物质被去除，然后电容器电介质材料沿着存储节点的侧壁形成。 然后在电容器电介质材料上形成电容器电极材料。 一些实施方案包括利用含二氧化硅掩蔽结构的方法，其中掩蔽结构的二氧化硅被未被水润湿的物质涂覆。

公开(公告)号：US07955440B2

公开(公告)日：2011-06-07

申请号：US12746201

申请日：2008-11-21

申请人： Shigeru Okuuchi ,  Kazushige Takaishi

发明人： Shigeru Okuuchi ,  Kazushige Takaishi

IPC分类号： C23G1/02

CPC分类号： H01L21/02052 ,  H01L21/67051 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/928

摘要： After a water film is formed on a wafer front surface in a chamber, the water film is supplied sequentially with an oxidizing component of an oxidation gas, an organic acid component of an organic acid mist, an HF component of an HF gas, the organic acid mist, and the oxidizing component of the oxidation gas. As a result, the HF component and the organic acid component provide cleaning effect on the wafer surface, and a concentration of the cleaning components in the water film within a wafer surface can be even.

摘要翻译： 在室中的晶片正面上形成水膜之后，依次提供氧化气体的氧化成分，有机酸雾的有机酸成分，HF气体的HF成分，有机物 酸雾和氧化气体的氧化成分。 结果，HF成分和有机酸成分对晶片表面提供清洁效果，并且晶片表面内的水膜中的清洁成分的浓度可以是均匀的。

公开(公告)号：US07892937B2

公开(公告)日：2011-02-22

申请号：US12252499

申请日：2008-10-16

申请人： Niraj Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

发明人： Niraj Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

IPC分类号： H01L21/20

CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L21/28282 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/11807 ,  Y10S438/906 ,  Y10T29/43

摘要： Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.

摘要翻译： 一些实施例包括形成电容器的方法。 存储节点形成在材料内。 存储节点具有沿材料的侧壁。 去除一些材料以暴露侧壁的部分。 侧壁的暴露部分涂覆有未被水润湿的物质。 除去附加材料以暴露侧壁的未涂覆区域。 物质被去除，然后电容器电介质材料沿着存储节点的侧壁形成。 然后在电容器电介质材料上形成电容器电极材料。 一些实施方案包括利用含二氧化硅掩蔽结构的方法，其中掩蔽结构的二氧化硅被未被水润湿的物质涂覆。

公开(公告)号：US07816272B2

公开(公告)日：2010-10-19

申请号：US12385135

申请日：2009-03-31

申请人： Hiroomi Tsutae

发明人： Hiroomi Tsutae

IPC分类号： H01L21/302

CPC分类号： H01J37/32862 ,  B08B7/0035 ,  C23C16/4405 ,  Y10S438/905 ,  Y10S438/906

摘要： A process of cleaning a semiconductor manufacturing system, and a method of manufacturing a semiconductor device. The cleaning process includes, for example, positioning a ceramic cover on the electrostatic chuck in tight contact with the chuck, and feeding a fluoride-based cleaning gas into a chamber. After the cleaning process, a process of forming a semiconductor film (deposition process) is performed. It is possible to prevent fluorine degasification from a substrate-supporting electrode (electrostatic chuck) during the deposition process. A semiconductor film can be formed without causing a temperature drop near the substrate. This prevents irregular film thickness, defective etching, film flaking, etc.

摘要翻译： 一种清洁半导体制造系统的方法，以及半导体装置的制造方法。 清洁过程包括例如将陶瓷盖定位在与卡盘紧密接触的静电卡盘上，并将氟化物基清洁气体进料到室中。 在清洁处理之后，进行形成半​​导体膜（沉积工艺）的工艺。 在沉积过程中可以防止基板支撑电极（静电卡盘）的氟脱气。 可以形成半导体膜，而不会在基板附近引起温度下降。 这样可以防止不规则的膜厚度，缺陷蚀刻，薄膜剥落等

公开(公告)号：US07807585B2

公开(公告)日：2010-10-05

申请号：US12611088

申请日：2009-11-02

申请人： Takuya Seino ,  Manabu Ikemoto ,  Hiroki Date

发明人： Takuya Seino ,  Manabu Ikemoto ,  Hiroki Date

IPC分类号： H01L21/31 ,  C23C16/00

CPC分类号： H01L21/28229 ,  C23C14/02 ,  C23C14/165 ,  C23C14/5853 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/31645 ,  H01L29/517 ,  Y10S438/906

摘要： A dielectric insulating film including HfO or the like is formed by: cleaning a surface of a semiconductor substrate by exposing the substrate surface to a fluorine radical; performing hydrogen termination processing with a fluorine radical or a hydride (SiH4 or the like); sputtering Hf or the like; and then performing oxidation/nitridation. These steps are carried out without exposing the substrate to atmosphere, thereby making it possible to obtain a C-V curve with less hysteresis and realize a MOS-FET having favorable device characteristics.

摘要翻译： 通过以下步骤形成包括HfO等的介电绝缘膜：通过将衬底表面暴露于氟基来清洁半导体衬底的表面; 用氟基或氢化物（SiH 4等）进行氢终止处理; 溅射Hf等; 然后进行氧化/氮化。 这些步骤在不将基板暴露于大气的情况下进行，从而可以获得具有较小滞后的C-V曲线，并实现具有良好的器件特性的MOS-FET。