公开(公告)号：US06518125B1

公开(公告)日：2003-02-11

申请号：US09714200

申请日：2000-11-17

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21336

CPC classification number: H01L28/87 ,  H01L21/28273 ,  H01L27/10855 ,  H01L29/42324

Abstract: First of all, a semiconductor substrate has the poly regions thereon. Then the souse/drain regions are formed in the semiconductor substrate by performing the ion-implant method. Next, the dielectric layers are formed on the souse/drain regions and between the poly regions. For increasing the coupling ratio of the flash memory, the photoresist layers, individually, are defined on the dielectric layers and the poly regions. Afterward, the dielectric layers are etched by performing an etched process and the photoresist layers as etched masks, wherein the dielectric layers have the swing-like surfaces with large surface area after the etched process is finished. The photoresist layers are then removed. A polysilicon layer is formed along swing-like surfaces of dielectric layers and the surfaces of the poly regions by conforming method, while the polysilicon layer is patterned to form the first gates. Then an ONO layer is formed along the surfaces of the first poly gates by conforming method. Finally, a polysilicon layer, again, is formed along the surfaces of dielectric layers and the surface of the ONO layer by conforming method, so as to be a second gate.

Abstract translation: 首先，半导体衬底上具有多个区域。 然后通过执行离子注入方法在半导体衬底中形成掺杂/漏极区域。 接下来，电介质层形成在掺杂/漏极区域和多个区域之间。 为了增加闪速存储器的耦合比，光致抗蚀剂层分别被定义在电介质层和多个区域上。 之后，通过进行蚀刻工艺和光致抗蚀剂层作为蚀刻掩模蚀刻电介质层，其中介电层在蚀刻工艺完成后具有大的表面积的摆动表面。 然后去除光致抗蚀剂层。 通过一致的方法，通过电介质层和多晶面的表面沿着摆动状的表面形成多晶硅层，同时将多晶硅层图案化以形成第一栅极。 然后通过符合方法沿着第一多晶硅栅极的表面形成ONO层。 最后，通过一致的方法沿着电介质层的表面和ONO层的表面再次形成多晶硅层，从而成为第二栅极。

公开(公告)号：US06399259B1

公开(公告)日：2002-06-04

申请号：US09734285

申请日：2000-12-11

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03C500

CPC classification number: H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S430/151 ,  H01L2924/00

Abstract: An alignment method for photolithography, especially for forming an alignment marker on a substrate after ion implantation. A substrate that includes a device region and an alignment mark region is provided. A first patterned photoresist layer is formed over the substrate. The first patterned photoresist layer includes an alignment marker within the alignment mark region and an ion implantation pattern within the device region. Using the first patterned photoresist layer as a mask, an ion implantation is carried out to form a plurality of doped regions. A second patterned photoresist layer that exposes the alignment marker is formed over the ion-implant pattern of the first patterned photoresist layer. Using the alignment marker as a mask, the substrate is etched to form a plurality of recess regions.

Abstract translation: 用于光刻的取向方法，特别是用于在离子注入之后在衬底上形成取向标记物。 提供了包括器件区域和对准标记区域的衬底。 在衬底上形成第一图案化光致抗蚀剂层。 第一图案化光致抗蚀剂层包括对准标记区域内的对准标记和装置区域内的离子注入图案。 使用第一图案化光致抗蚀剂层作为掩模，进行离子注入以形成多个掺杂区域。 在第一图案化光致抗蚀剂层的离子注入图案上形成曝光对准标记的第二图案化光致抗蚀剂层。 使用对准标记作为掩模，蚀刻基板以形成多个凹陷区域。