公开(公告)号：US20220413217A1

公开(公告)日：2022-12-29

申请号：US17358255

申请日：2021-06-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Subramanian Krishnamurthy ,  Yusheng Bian

IPC: G02B6/122 ,  G02B6/13

Abstract: Structures for an optical power splitter and methods of forming a structure for an optical power splitter. The structure includes a first waveguide core having a first arm, a second waveguide core including a second arm, and a third waveguide core having a third arm laterally positioned between the first arm and the second arm. The third arm has a longitudinal axis. The first arm is longitudinally offset from the third arm parallel to the longitudinal axis such that the third arm and the first arm are laterally adjacent over a first overlap distance. The second arm is longitudinally offset from the third arm parallel to the longitudinal axis such that the third arm and the second arm are laterally adjacent over a second overlap distance. The first overlap distance is greater than the second overlap distance to provide an overlap offset.

公开(公告)号：US11513286B2

公开(公告)日：2022-11-29

申请号：US17026799

申请日：2020-09-21

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian

IPC: G02B6/122 ,  G02B6/13 ,  G02B6/12

Abstract: Structures for an optical power splitter/combiner and methods of forming a structure for an optical power splitter/combiner. A first waveguide core is positioned adjacent to a second waveguide core. The first waveguide core includes a first end surface and a first tapered section that tapers toward the first end surface. The second waveguide core includes a second end surface and a second tapered section that tapers toward the second end surface. A third waveguide core is positioned in a different level than the first waveguide core and the second waveguide core. The third waveguide core includes a third end surface and a third tapered section that tapers toward the third end surface. The third tapered section includes a portion laterally positioned between the first tapered section of the first waveguide core and the second tapered section of the second waveguide core.

公开(公告)号：US11448822B2

公开(公告)日：2022-09-20

申请号：US17131997

申请日：2020-12-23

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Judson R. Holt ,  Yusheng Bian ,  Dali Shao

IPC: G02B6/12 ,  G02B6/122 ,  H01L29/06 ,  G02B6/30

Abstract: Disclosed is a silicon-on-insulator (SOI) chip structure with a substrate-embedded optical waveguide. Also disclosed is a method for forming the SOI chip structure. In the method, an optical waveguide is formed within a trench in a bulk substrate prior to a wafer bonding process that results in the SOI structure. Subsequently, front-end-of-the-line (FEOL) processing can be performed to form additional optical devices and/or electronic devices in and/or above the silicon layer. By embedding an optical waveguide within the substrate prior to wafer bonding as opposed to forming it during FEOL processing, strict limitations on the dimensions of the core layer of the optical waveguide are avoided. The core layer of the substrate-embedded optical waveguide can be relatively large such that the cut-off wavelength can be relatively long. Thus, such a substrate-embedded optical waveguide brings different functionality to the SOI chip structure as compared to FEOL optical waveguides.

公开(公告)号：US20220291446A1

公开(公告)日：2022-09-15

申请号：US17197133

申请日：2021-03-10

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Qizhi Liu

IPC: G02B6/124 ,  G02B6/13

Abstract: Embodiments of the disclosure provide an optical antenna for a photonic integrated circuit (PIC). The optical antenna includes a semiconductor waveguide on a semiconductor layer. The semiconductor waveguide includes a first vertical sidewall over the semiconductor layer over the semiconductor layer. A plurality of grating protrusions extends horizontally from the first vertical sidewall of the semiconductor waveguide.

公开(公告)号：US20220244457A1

公开(公告)日：2022-08-04

申请号：US17162303

申请日：2021-01-29

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Alec Hammond ,  Yusheng Bian ,  Michal Rakowski ,  Won Suk Lee ,  Asif J. Chowdhury ,  Roderick A. Augur

IPC: G02B6/124 ,  G02B6/13

Abstract: Structures including a grating coupler and methods of forming a structure that includes a grating coupler. The grating coupler includes segments that are spaced along a longitudinal axis. Each segment is inclined relative to the longitudinal axis. Each segment includes a first curved section having a first curvature and a second curved section having a second curvature that is inverted relative to the first curvature.

公开(公告)号：US20220229250A1

公开(公告)日：2022-07-21

申请号：US17151955

申请日：2021-01-19

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Roderick A. Augur ,  Kenneth J. Giewont ,  Karen Nummy

IPC: G02B6/42 ,  F21V8/00 ,  G02B6/30

Abstract: Structures including an edge coupler and methods of forming a structure including an edge coupler. The structure includes a waveguide core over a dielectric layer and a back-end-of-line stack over the dielectric layer and the waveguide core. The back-end-of-line stack includes a side edge and a truncated layer that is overlapped with a tapered section of the waveguide core. The truncated layer has a first end surface adjacent to the side edge and a second end surface above the tapered section of the waveguide core. The truncated layer is tapered from the first end surface to the second end surface.

公开(公告)号：US11385408B2

公开(公告)日：2022-07-12

申请号：US16849355

申请日：2020-04-15

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Won Suk Lee

IPC: G02B6/12 ,  G02B6/126 ,  G02B6/122

Abstract: Structures for a polarizer and methods of forming a structure for a polarizer. A polarizer includes a first waveguide core and a layer that is positioned adjacent to a side surface of the first waveguide core. The layer is composed of a first material having a permittivity with an imaginary part that ranges from 0 to about 15. A second waveguide core is positioned over the first waveguide core. The second waveguide core is composed of a second material that is different in composition from the first material.

公开(公告)号：US11381053B2

公开(公告)日：2022-07-05

申请号：US16718329

申请日：2019-12-18

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob

IPC: H01S3/063 ,  H01S3/16 ,  H01S3/091

Abstract: Embodiments of the disclosure provide a waveguide-confining layer, a photonic integrated circuit (PIC) die with embodiments of a waveguide-confining layer, and methods to form the same. The waveguide-confining layer may include an oxide layer over a buried insulator layer, a silicon-based optical confinement structure embedded within or positioned on the oxide layer, and first and second blocking layers over the oxide layer and separated from each other by a horizontal slot. The first and second blocking layers include a metal or an oxide. A gain medium is positioned on the oxide layer and within the horizontal slot between the first and second blocking layers, and has a lower refractive index than each of the first and second blocking layers. The gain medium is vertically aligned with the silicon-based optical confinement structure, and a portion of the oxide layer separates the gain medium from the silicon-based optical confinement structure.

公开(公告)号：US11378747B2

公开(公告)日：2022-07-05

申请号：US16919867

申请日：2020-07-02

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Yusheng Bian ,  Won Suk Lee ,  Abdelsalam A. Aboketaf

IPC: G02B6/293 ,  G02B6/26 ,  G02B6/122 ,  G02B6/12

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to waveguide attenuators and methods of manufacture. The structure includes: a main bus waveguide structure; a first hybrid waveguide structure evanescently coupled to the main bus waveguide structure and comprising a first geometry of material; and a second hybrid waveguide structure evanescently coupled to the main bus waveguide structure and comprising a second geometry of the material.

公开(公告)号：US11374143B2

公开(公告)日：2022-06-28

申请号：US16740664

申请日：2020-01-13

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Ajey Poovannummoottil Jacob ,  Yusheng Bian ,  Steven Shank

IPC: H01L31/103 ,  G02B6/13 ,  H01L31/0392 ,  G02B6/12

Abstract: One illustrative photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, the N-doped waveguide structure comprising a plurality of first fins, and a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. In this example, the photodetector also includes at least one N-doped contact region positioned in the semiconductor material and a P-doped contact region positioned in the detector structure.