公开(公告)号：US20230019691A1

公开(公告)日：2023-01-19

申请号：US17949661

申请日：2022-09-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Ryo HATSUMI ,  Daisuke KUBOTA ,  Hiroyuki MIYAKE

IPC: G02F1/1343 ,  G02F1/1333 ,  G02F1/1337 ,  G02F1/1362

Abstract: A display device with less light leakage and excellent contrast is provided. A display device having a high aperture ratio and including a large-capacitance capacitor is provided. A display device in which wiring delay due to parasitic capacitance is reduced is provided. A display device includes a transistor over a substrate, a pixel electrode connected to the transistor, a signal line electrically connected to the transistor, a scan line electrically connected to the transistor and intersecting with the signal line, and a common electrode overlapping with the pixel electrode and the signal line with an insulating film provided therebetween. The common electrode includes stripe regions extending in a direction intersecting with the signal line.

公开(公告)号：US20220415893A1

公开(公告)日：2022-12-29

申请号：US17891248

申请日：2022-08-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yutaka SHIONOIRI ,  Hiroyuki MIYAKE ,  Kiyoshi KATO

IPC: H01L27/105 ,  H01L27/1156 ,  H01L27/12 ,  H01L27/13 ,  H01L27/115 ,  H01L29/786

Abstract: It is an object to provide a memory device whose power consumption can be suppressed and a semiconductor device including the memory device. As a switching element for holding electric charge accumulated in a transistor which functions as a memory element, a transistor including an oxide semiconductor film as an active layer is provided for each memory cell in the memory device. The transistor which is used as a memory element has a first gate electrode, a second gate electrode, a semiconductor film located between the first gate electrode and the second gate electrode, a first insulating film located between the first gate electrode and the semiconductor film, a second insulating film located between the second gate electrode and the semiconductor film, and a source electrode and a drain electrode in contact with the semiconductor film.

公开(公告)号：US20220165758A1

公开(公告)日：2022-05-26

申请号：US17666938

申请日：2022-02-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L27/088 ,  H01L29/04

Abstract: An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.

公开(公告)号：US20220147106A1

公开(公告)日：2022-05-12

申请号：US17585680

申请日：2022-01-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiharu HIRAKATA ,  Hiroyuki MIYAKE ,  Seiko INOUE ,  Shunpei YAMAZAKI

IPC: G06F1/16 ,  G06F3/041

Abstract: A display device with low power consumption is provided. Furthermore, a display device in which an image is displayed in a region that can be used in a folded state is provided. The conceived display device includes a display portion that can be opened and folded, a sensing portion that senses a folded state of the display portion, and an image processing portion that generates, when the display portion is in the folded state, an image in which a black image is displayed in part of the display portion.

公开(公告)号：US20210295793A1

公开(公告)日：2021-09-23

申请号：US17338739

申请日：2021-06-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: G09G3/36 ,  G06F3/042

Abstract: The liquid crystal display device includes a first substrate provided with a terminal portion, a switching transistor, a driver circuit portion, and a pixel circuit portion including a pixel transistor and a plurality of pixels, a second substrate provided with a common electrode electrically connected to the terminal portion through the switching transistor, and liquid crystal between a pixel electrode and the common electrode. In a period during which a still image is switched to a moving image, the following steps are sequentially performed: a first step of supplying the common potential to the common electrode; a second step of supplying a power supply voltage to the driver circuit portion; a third step of supplying a clock signal to the driver circuit portion; and a fourth step of supplying a start pulse signal to the driver circuit portion.

公开(公告)号：US20210288079A1

公开(公告)日：2021-09-16

申请号：US17328171

申请日：2021-05-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: H01L27/12 ,  H01L29/04 ,  H01L29/417 ,  H01L29/423 ,  H01L29/10 ,  H01L29/45 ,  H01L29/24 ,  G09G3/20 ,  G11C19/28 ,  H01L29/786

Abstract: An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured.

公开(公告)号：US20210278715A1

公开(公告)日：2021-09-09

申请号：US17326675

申请日：2021-05-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Makoto KANEYASU

IPC: G02F1/1343 ,  G09F9/30 ,  G09G3/36 ,  H01L29/786 ,  H01L27/12 ,  G02F1/1362

Abstract: A display device in which parasitic capacitance between wirings can be reduced is provided. Furthermore, a display device in which display quality is improved is provided. Furthermore, a display device in which power consumption can be reduced is provided.
The display device includes a signal line, a scan line, a first electrode, a second electrode, a third electrode, a first pixel electrode, a second pixel electrode, and a semiconductor film. The signal line intersects with the scan line, the first electrode is electrically connected to the signal line, the first electrode has a region overlapping with the scan line, the second electrode faces the first electrode, the third electrode faces the first electrode, the first pixel electrode is electrically connected to the second electrode, the second pixel electrode is electrically connected to the third electrode, the semiconductor film is in contact with the first electrode, the second electrode, and the third electrode, and the semiconductor film is provided between the scan line and the first electrode to the third electrode.

公开(公告)号：US20210135472A1

公开(公告)日：2021-05-06

申请号：US17140350

申请日：2021-01-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junpei MOMO ,  Hiroyuki MIYAKE ,  Kei TAKAHASHI

IPC: H02J7/00 ,  H02J50/80 ,  H02J50/20 ,  H02J50/12 ,  H01M10/0525 ,  H01M10/0583 ,  H01M10/0585 ,  H01M4/96 ,  H01M10/42 ,  H01M10/44

Abstract: A decrease in the capacity of a power storage device is inhibited by adjusting or reducing imbalance in the amount of inserted and extracted carrier ions between positive and negative electrodes, which is caused by decomposition of an electrolyte solution of the negative electrode. Further, the capacity of the power storage device can be restored. Furthermore, impurities in the electrolyte solution can be decomposed with the use of the third electrode. A power storage device including positive and negative electrodes, an electrolyte, and a third electrode is provided. The third electrode has an adequate electrostatic capacitance. The third electrode can include a material with a large surface area. In addition, a method for charging the power storage device including the steps of performing charging by applying a current between the positive and negative electrodes, and performing additional applying a current between the third electrode and the negative electrode is provided.

公开(公告)号：US20200312261A1

公开(公告)日：2020-10-01

申请号：US16850401

申请日：2020-04-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Kouhei TOYOTAKA ,  Shunpei YAMAZAKI

IPC: G09G3/36 ,  G11C19/28 ,  H01L27/12

Abstract: To provide a semiconductor device including a narrowed bezel obtained by designing a gate driver circuit. A gate driver of a display device includes a shift register unit, a demultiplexer circuit, and n signal lines. By connecting the n signal lines for transmitting clock signals to one stage of the shift register unit, (n−3) output signals can be output. The larger n becomes, the smaller the rate of signal lines for transmitting clock signals which do not contribute to output becomes; accordingly, the area of the shift register unit part is small compared to a conventional structure in which one stage of a shift register unit outputs one output signal. Therefore, the gate driver circuit can have a narrow bezel.

公开(公告)号：US20200258449A1

公开(公告)日：2020-08-13

申请号：US16862658

申请日：2020-04-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: G09G3/3208 ,  G09G3/20 ,  H01L27/32 ,  G09G3/3233 ,  H01L27/12 ,  H01L29/786

Abstract: Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.