公开(公告)号：US11381053B2

公开(公告)日：2022-07-05

申请号：US16718329

申请日：2019-12-18

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob

IPC: H01S3/063 ,  H01S3/16 ,  H01S3/091

Abstract: Embodiments of the disclosure provide a waveguide-confining layer, a photonic integrated circuit (PIC) die with embodiments of a waveguide-confining layer, and methods to form the same. The waveguide-confining layer may include an oxide layer over a buried insulator layer, a silicon-based optical confinement structure embedded within or positioned on the oxide layer, and first and second blocking layers over the oxide layer and separated from each other by a horizontal slot. The first and second blocking layers include a metal or an oxide. A gain medium is positioned on the oxide layer and within the horizontal slot between the first and second blocking layers, and has a lower refractive index than each of the first and second blocking layers. The gain medium is vertically aligned with the silicon-based optical confinement structure, and a portion of the oxide layer separates the gain medium from the silicon-based optical confinement structure.

公开(公告)号：US11378747B2

公开(公告)日：2022-07-05

申请号：US16919867

申请日：2020-07-02

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Yusheng Bian ,  Won Suk Lee ,  Abdelsalam A. Aboketaf

IPC: G02B6/293 ,  G02B6/26 ,  G02B6/122 ,  G02B6/12

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to waveguide attenuators and methods of manufacture. The structure includes: a main bus waveguide structure; a first hybrid waveguide structure evanescently coupled to the main bus waveguide structure and comprising a first geometry of material; and a second hybrid waveguide structure evanescently coupled to the main bus waveguide structure and comprising a second geometry of the material.

公开(公告)号：US11374143B2

公开(公告)日：2022-06-28

申请号：US16740664

申请日：2020-01-13

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Ajey Poovannummoottil Jacob ,  Yusheng Bian ,  Steven Shank

IPC: H01L31/103 ,  G02B6/13 ,  H01L31/0392 ,  G02B6/12

Abstract: One illustrative photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, the N-doped waveguide structure comprising a plurality of first fins, and a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. In this example, the photodetector also includes at least one N-doped contact region positioned in the semiconductor material and a P-doped contact region positioned in the detector structure.

公开(公告)号：US11366269B2

公开(公告)日：2022-06-21

申请号：US16985645

申请日：2020-08-05

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian

IPC: G02B6/122 ,  G02B6/136 ,  G02B6/12

Abstract: Structures including an edge coupler and methods of fabricating a structure including an edge coupler. The edge coupler includes a waveguide core having an end surface and a tapered section that terminates at the end surface. The tapered section of the waveguide core includes a slab layer and a ridge layer on the slab layer. The slab layer and the ridge layer each terminate at the end surface. The slab layer has a first width dimension with a first width at a given location along a longitudinal axis of the waveguide core, the ridge layer has a second width dimension with a second width at the given location along the longitudinal axis of the waveguide core, and the first width is greater than the second width.

公开(公告)号：US20220187676A1

公开(公告)日：2022-06-16

申请号：US17119042

申请日：2020-12-11

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Michal Rakowski ,  Yusheng Bian ,  Won Suk Lee ,  Roderick A. Augur

IPC: G02F1/225

Abstract: Embodiments of the disclosure provide an optical ring modulator. The optical ring modulator includes waveguide with a first semiconductor material of a first doping type, and a second semiconductor material having a second doping type adjacent the first semiconductor material. A P-N junction is between the first semiconductor material and the second semiconductor material. A plurality of photonic crystal layers, each embedded within the first semiconductor material or the second semiconductor material, has an upper surface that is substantially coplanar with an upper surface of the waveguide structure.

公开(公告)号：US11353654B2

公开(公告)日：2022-06-07

申请号：US17031032

申请日：2020-09-24

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Yusheng Bian

IPC: G02B6/124 ,  G02B6/12

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to spiral waveguide absorbers and methods of manufacture. The structure includes: a photonics component; and a waveguide absorber with a grating pattern coupled to a node of the photonics component.

公开(公告)号：US20220146748A1

公开(公告)日：2022-05-12

申请号：US17094105

申请日：2020-11-10

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian

IPC: G02B6/125 ,  G02B6/122 ,  G02B6/28 ,  G02B6/02

Abstract: Structures with waveguide cores in multiple levels and methods of fabricating a structure that includes waveguide cores in multiple levels. The structure includes a first waveguide core and a second waveguide core positioned in a different level than the first waveguide core. The first waveguide core includes a longitudinal axis and a plurality of segments having a spaced arrangement along the longitudinal axis. The second waveguide core is aligned to extend across the plurality of segments of the first waveguide core.

公开(公告)号：US20220128762A1

公开(公告)日：2022-04-28

申请号：US17082291

申请日：2020-10-28

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Ryan W. Sporer ,  Karen A. Nummy

IPC: G02B6/122

Abstract: Structures and methods implement an enlarged waveguide. The structure may include a semiconductor-on-insulator (SOI) substrate including a semiconductor-on-insulator (SOI) layer over a buried insulator layer over a semiconductor substrate. An inter-level dielectric (ILD) layer is over the SOI substrate. A first waveguide has a lower surface extending at least partially into the buried insulator layer, which allows vertical enlargement of the waveguide, without increasing the thickness of the ILD layer or increasing the length of interconnects to other devices. The enlarged waveguide may include nitride, and can be implemented with other conventional silicon and nitride waveguides.

公开(公告)号：US20220091335A1

公开(公告)日：2022-03-24

申请号：US17026799

申请日：2020-09-21

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian

IPC: G02B6/122 ,  G02B6/13

Abstract: Structures for an optical power splitter/combiner and methods of forming a structure for an optical power splitter/combiner. A first waveguide core is positioned adjacent to a second waveguide core. The first waveguide core includes a first end surface and a first tapered section that tapers toward the first end surface. The second waveguide core includes a second end surface and a second tapered section that tapers toward the second end surface. A third waveguide core is positioned in a different level than the first waveguide core and the second waveguide core. The third waveguide core includes a third end surface and a third tapered section that tapers toward the third end surface. The third tapered section includes a portion laterally positioned between the first tapered section of the first waveguide core and the second tapered section of the second waveguide core.

公开(公告)号：US11275207B2

公开(公告)日：2022-03-15

申请号：US16989214

申请日：2020-08-10

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob

IPC: G02B6/125 ,  G02B6/136 ,  G02B6/12

Abstract: Structures for a waveguide bend and methods of fabricating a structure for a waveguide bend. A waveguide core has a first section, a second section, and a waveguide bend connecting the first section with the second section. The waveguide core includes a first side surface extending about an inner radius of the waveguide bend and a second side surface extending about an outer radius of the waveguide bend. A curved strip is arranged over the waveguide bend adjacent to the first side surface or the second side surface.