公开(公告)号：US20110194778A1

公开(公告)日：2011-08-11

申请号：US13122731

申请日：2009-10-02

Applicant: Kei Sakai ,  Fumihiro Sasajima

Inventor： Kei Sakai ,  Fumihiro Sasajima

IPC: G06K9/62

CPC classification number: H01J37/222 ,  G06T7/001 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/28 ,  H01J2237/2817 ,  H01J2237/2826

Abstract: Provided is a method for determining the magnification of a pattern searching template of a scanning electron microscope. The determining method comprises: acquiring a first image initially at a first magnification; then acquiring a second image which contains a pattern image displayed on the first image at a second magnification lower than the first magnification; making the size of the first image coincident with the size of a third image which cut out a portion of the second image; thereafter determining the correlation value between the first image and the third image; and setting the second magnification as the magnification of a pattern searching template, in the case where the correlation value is equal to or higher than a predetermined value. As a result, a condition for acquiring a search area can be properly set, when pattern recognition is performed by means of the template.

Abstract translation: 提供了一种用于确定扫描电子显微镜的图案搜索模板的放大率的方法。 所述确定方法包括：以第一放大率开始获取第一图像; 然后以低于第一倍率的第二倍率获取包含显示在第一图像上的图案图像的第二图像; 使第一图像的大小与切出第二图像的一部分的第三图像的大小一致; 然后确定第一图像和第三图像之间的相关值; 并且在相关值等于或高于预定值的情况下，将第二放大倍率设置为模式搜索模板的放大率。 结果，当通过模板执行模式识别时，可以适当地设置用于获取搜索区域的条件。

公开(公告)号：US20090226096A1

公开(公告)日：2009-09-10

申请号：US12393321

申请日：2009-02-26

Applicant: Hitoshi NAMAI ,  Osamu Komuro ,  Satoru Yamaguchi ,  Fumihiro Sasajima

Inventor： Hitoshi NAMAI ,  Osamu Komuro ,  Satoru Yamaguchi ,  Fumihiro Sasajima

IPC: G06K9/48

CPC classification number: G06K9/4609 ,  G06T7/13

Abstract: An object of the present invention is to provide an edge detection technique and equipment which are capable of stably detecting an edge by suppressing the influence of noise even in the case where the image is obtained by charged particle radiation equipment, such as a scanning electron microscope and has a low S/N ratio. More specifically, the present invention is to propose a technique and equipment which are configured to determine a peak position (edge) on the basis of the following two edge extraction techniques. That is, the present invention is to propose a technique and equipment wherein at least two peaks are formed by using, as edge detection techniques, for example, one peak detection technique having a relatively high sensitivity and the other peak detection technique which is relatively less susceptible to the influence of noise than the one peak detection technique, and wherein a position where the peaks coincide with each other is determined as a true peak position (edge position).

Abstract translation: 本发明的目的是提供一种能够通过抑制噪声的影响来稳定地检测边缘的边缘检测技术和设备，即使在通过诸如扫描电子显微镜的带电粒子辐射设备获得图像的情况下 并具有较低的S / N比。 更具体地，本发明是提出一种被配置为基于以下两个边缘提取技术来确定峰值位置（边缘）的技术和设备。 也就是说，本发明提出一种技术和设备，其中通过使用作为边缘检测技术的至少两个峰形成例如具有相对较高灵敏度的一个峰值检测技术和相对较少的另一个峰值检测技术 容易受到噪声的影响而不是一个峰值检测技术，并且其中峰值彼此一致的位置被确定为真正的峰值位置（边缘位置）。

公开(公告)号：US20090097735A1

公开(公告)日：2009-04-16

申请号：US12239015

申请日：2008-09-26

Applicant: Fumihiro SASAJIMA

Inventor： Fumihiro SASAJIMA

IPC: G06K9/00

CPC classification number: G06T7/001 ,  G06K2209/19 ,  G06T2207/10061 ,  G06T2207/30148

Abstract: An image for measuring a pattern or an image for making positioning for measurement is formed by scanning a sample with a focused electron beam and an estimation value of the image is compared with an image estimation value of a previously gotten reference image, so that focusing of the electron beam is performed again when it is judged that the formed image does not satisfy a predetermined condition by the comparison with the reference image.

Abstract translation: 通过用聚焦电子束扫描样品，并将图像的估计值与先前获得的参考图像的图像估计值进行比较，来形成用于测量用于测量的图案或图像的图像，从而将聚焦 当通过与参考图像的比较判断形成的图像不满足预定条件时，再次执行电子束。

公开(公告)号：US20090020699A1

公开(公告)日：2009-01-22

申请号：US12208389

申请日：2008-09-11

Applicant: Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

Inventor： Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

IPC: G01N23/225

CPC classification number: G03F7/70608 ,  G01N23/225 ,  G06T7/0004 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/2487

Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

Abstract translation: 相对于由步进器暴露的微结构化图案检测掩模版的边缘，并且检测光致抗蚀剂表面和底部处的微结构图案的形状。 通过在屏幕上计算和显示代表光刻胶表面和底部上检测到的图案之间的位置关系的位错矢量来评估微结构化图案。 此外，同样计算单芯片或单次照射区域或一个晶片上的多个位置处的微结构化图案之间的位错矢量，则将每个这样的位置处的位错矢量的尺寸和分布状态分类为特征量，并且 分析相应的趋势。 因此，检测到步进器或晶片异常。

公开(公告)号：US07435959B2

公开(公告)日：2008-10-14

申请号：US11798395

申请日：2007-05-14

Applicant: Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

Inventor： Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

IPC: G01N23/225

CPC classification number: G03F7/70608 ,  G01N23/225 ,  G06T7/0004 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/2487

Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

Abstract translation: 相对于由步进器暴露的微结构化图案检测掩模版的边缘，并且检测光致抗蚀剂表面和底部处的微结构图案的形状。 通过在屏幕上计算和显示代表光刻胶表面和底部上检测到的图案之间的位置关系的位错矢量来评估微结构化图案。 此外，同样计算单芯片或单次照射区域或一个晶片上的多个位置处的微结构化图案之间的位错矢量，则将每个这样的位置处的位错矢量的尺寸和分布状态分类为特征量，并且 分析相应的趋势。 因此，检测到步进器或晶片异常。

公开(公告)号：US07217923B2

公开(公告)日：2007-05-15

申请号：US11197584

申请日：2005-08-05

Applicant: Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

Inventor： Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

IPC: G01N23/225

CPC classification number: G03F7/70608 ,  G01N23/225 ,  G06T7/0004 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/2487

Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

公开(公告)号：US20050277029A1

公开(公告)日：2005-12-15

申请号：US11197584

申请日：2005-08-05

Applicant: Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

Inventor： Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

IPC: H01L21/027 ,  B32B3/00 ,  G01B11/00 ,  G01N23/225 ,  G01Q30/02 ,  G01Q30/04 ,  G03F7/20 ,  H01L21/66

CPC classification number: G03F7/70608 ,  G01N23/225 ,  G06T7/0004 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/2487

Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

Abstract translation: 相对于由步进器暴露的微结构化图案检测掩模版的边缘，并且检测光致抗蚀剂表面和底部处的微结构图案的形状。 通过在屏幕上计算和显示代表光刻胶表面和底部上检测到的图案之间的位置关系的位错矢量来评估微结构化图案。 此外，同样计算单芯片或单次照射区域或一个晶片上的多个位置处的微结构化图案之间的位错矢量，则将每个这样的位置处的位错矢量的尺寸和分布状态分类为特征量，并且 分析相应的趋势。 因此，检测到步进器或晶片异常。

公开(公告)号：US09104913B2

公开(公告)日：2015-08-11

申请号：US13882147

申请日：2011-10-14

Applicant: Fumihiro Sasajima ,  Yoshihiro Kimura

Inventor： Fumihiro Sasajima ,  Yoshihiro Kimura

IPC: G06K9/00 ,  H01J37/28 ,  G03F7/20 ,  H01L21/66

CPC classification number: G06K9/00523 ,  G03F7/70625 ,  H01J37/28 ,  H01J2237/24578 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In measuring pattern with large process fluctuation, correct measurement cannot be carried out if noises, such as pattern that is not the subject to be measured, and dirt, are present in periphery of pattern to be measured in previously registered measurement region. Among the image data of sample, predetermined region aligned by pattern matching is set as region not to be measured that is excluded from subjects of pattern measurement. For example, in measuring pattern with large process fluctuation, only region including pattern with small process fluctuation is used in pattern matching, while in measuring the pattern, predetermined region, which was used in pattern matching and aligned, is set as region not to be measured. Stable pattern measurement can be easily carried out with respect to pattern with large process fluctuation, without being affected by region where measurement region and region not to be measured overlap with each other.

Abstract translation: 在具有大的工艺波动的测量图形中，如果在先前记录的测量区域中的要测量的图案的周围存在噪声，例如不被测量的图案和污物，则不能进行正确的测量。 在样本的图像数据中，通过图案匹配对准的预定区域被设置为从图案测量对象排除的不被测量的区域。 例如，在具有大的工艺波动的测量图案中，在图案匹配中仅使用包括具有小的工艺波动的图案的区域，而在测量图案时，在图案匹配和对准中使用的预定区域被设置为不是 测量。 相对于具有大的工艺波动的图案，可以容易地进行稳定的图案测量，而不受测量区域和不被测量的区域彼此重叠的区域的影响。

公开(公告)号：US08953894B2

公开(公告)日：2015-02-10

申请号：US13122151

申请日：2009-10-02

Applicant: Yoshimichi Sato ,  Mitsuji Ikeda ,  Fumihiro Sasajima

Inventor： Yoshimichi Sato ,  Mitsuji Ikeda ,  Fumihiro Sasajima

IPC: G06K9/00 ,  G06K9/62 ,  H01J37/28 ,  G06T7/00 ,  H01J37/22

CPC classification number: H01J37/28 ,  G06K9/00127 ,  G06K2209/403 ,  G06T7/74 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/222 ,  H01J2237/24592

Abstract: A pattern matching method for a scanning electron microscope comprises a step of performing pattern matching of only an upper layer pattern between an image (101) in which a pattern consisting of plural layers is represented and a template (104) in which the upper layer pattern of the plural layer pattern is selectively represented, thereby identifying the position of the pattern consisting of the plural layers. Then, information about the upper layer pattern is subtracted from the image (101), thus extracting shape information (108) about the lower layer pattern. Consequently, stable positioning or selective information extraction on a certain layer is enabled regardless of the state of the depths of a pattern formed in three dimensions or of the charge state of a sample.

Abstract translation: 用于扫描电子显微镜的图案匹配方法包括在表示由多个层组成的图案的图像（101）和仅具有上层图案的模板（104）之间执行仅上层图案的图案匹配的步骤， 选择性地表示多层图案，由此识别由多层组成的图案的位置。 然后，从图像（101）中减去关于上层图案的信息，从而提取关于下层图案的形状信息（108）。 因此，无论在三维或样品的充电状态中形成的图案的深度的状态如何，都能够使特定层上的稳定定位或选择性信息提取。

公开(公告)号：US20130270436A1

公开(公告)日：2013-10-17

申请号：US13882134

申请日：2011-10-14

Applicant: Hitoshi Namai ,  Satoru Yamaguchi ,  Fumihiro Sasajima

Inventor： Hitoshi Namai ,  Satoru Yamaguchi ,  Fumihiro Sasajima

IPC: G01B21/30

CPC classification number: G01B21/30 ,  H01J37/28 ,  H01J2237/24578 ,  H01J2237/24592 ,  H01J2237/2816 ,  H01J2237/2817

Abstract: An object of the invention is to provide: a sample unevenness device that stably identifies unevenness formed on a sample, regardless of a pattern formation state or image acquisition conditions; and a computer program. As an aspect to achieve the above object, a device and computer program are proposed that obtain the area of a plurality of regions formed by a profile waveform of a given threshold or lower for a profile formed based on a detection signal obtained by scanning with a charged particle beam with respect to the sample; and determine either or both of that a site corresponding to a region with a relatively large area is a concave portion or that a space portion and a site corresponding to a space with a relatively small area is a convex portion or a line portion.

Abstract translation: 本发明的目的是提供：不管图案形成状态或图像获取条件如何，均匀地识别形成在样品上的不均匀性的样本不均匀装置; 和计算机程序。 作为实现上述目的的一个方面，提出了一种装置和计算机程序，其基于通过以下步骤扫描获得的检测信号，获得由给定阈值或更低的轮廓波形形成的多个区域的面积 带电粒子束相对于样品; 并且确定与具有相对较大面积的区域相对应的部位之一或两者是凹部，或者空间部分和与具有相对较小面积的空间相对应的部位是凸部或线部分。