公开(公告)号：US20050122246A1

公开(公告)日：2005-06-09

申请号：US11042006

申请日：2005-01-25

Applicant: Esin Terzioglu ,  Morteza Afghahi ,  Gil Winograd

Inventor： Esin Terzioglu ,  Morteza Afghahi ,  Gil Winograd

IPC: G11C7/06 ,  G11C7/14 ,  H03M1/12

CPC classification number: G11C7/065 ,  G11C7/14

Abstract: A digital memory system (30) includes a memory cell (52), a bit line (50), a transfer gate (60) a reference voltage generator (40), a sense amplifier (70) and a control circuit (80). The control circuit precharges the bit line to a bit line precharge voltage, which is sampled and stored. A corresponding reference voltage is generated after the bit line is isolated. The bit line and reference voltage are coupled to the sense amplifier so that a voltage is received based on charge stored in the memory cell. The sense amplifier then is isolated from the bit line and reference voltage and the sense amplifier is energized so that an output voltage is derived from the charge and reference voltage.

公开(公告)号：US06873553B1

公开(公告)日：2005-03-29

申请号：US10812533

申请日：2004-03-30

Applicant: Morteza Cyrus Afghahi ,  Esin Terzioglu ,  Gil Winograd

Inventor： Morteza Cyrus Afghahi ,  Esin Terzioglu ,  Gil Winograd

IPC: G11C11/412 ,  G11C16/04

CPC classification number: G11C11/412

Abstract: An SRAM cell eliminates the p-channel pull-up resistors to decrease its physical size. A tracking circuit generates a control signal used to ensure that the memory state is preserved during the idle state. The control signal controls the wordline voltage during the idle state to vary the leakage through the access transistors to ensure that current into the node through the access device is not exceeded by leakage current out of the output nodes through the storage devices. The tracking circuit control signal can also be used to vary the well to substrate bias voltage of the storage devices to decrease the leakage through the storage devices. The control signal can also be used to bias the supply rail voltage to which the storage devices are directly coupled to decrease the amount of leakage through the storage devices. The tracking circuit comprises a number of half configured memory cells that are placed in a state which mimics the stored state in a normal memory cell that would degrade during the idle state. A differential amplifier detects when the output state of the dummy cells have fallen below a predetermined reference voltage. The differential amplifier generates the control signal at a level required to restore the output state to at or near the reference voltage.

Abstract translation: SRAM单元消除了p沟道上拉电阻以减小其物理尺寸。 跟踪电路产生用于确保在空闲状态期间保持存储器状态的控制信号。 控制信号在空闲状态期间控制字线电压以改变通过存取晶体管的泄漏，以确保通过存储装置的输出节点之外的漏电流不会超过通过接入装置进入节点的电流。 跟踪电路控制信号也可以用于改变存储设备的阱到衬底偏置电压，以减少通过存储设备的泄漏。 控制信号也可以用于偏置存储装置直接耦合到的电源轨电压，以减少通过存储装置的泄漏量。 跟踪电路包括多个半配置的存储器单元，其被置于模拟在空闲状态期间将劣化的正常存储器单元中的存储状态的状态。 差分放大器检测虚拟单元的输出状态何时下降到预定参考电压以下。 差分放大器将输出状态恢复到等于或接近参考电压所需的电平。