公开(公告)号：US06595620B2

公开(公告)日：2003-07-22

申请号：US10008919

申请日：2001-12-03

Applicant: Atsushi Kubota ,  Hidehiro Watanabe ,  Takahisa Ikeda ,  Megumi Shimizu

Inventor： Atsushi Kubota ,  Hidehiro Watanabe ,  Takahisa Ikeda ,  Megumi Shimizu

IPC: B41J2165

CPC classification number: B41J2/04573 ,  B41J2/04586 ,  B41J2/04588 ,  B41J2/165

Abstract: An ink jet head having ink chambers, energy-generating elements provided in the ink chambers, respectively, and ink outlet ports communicating with the ink chambers, respectively. The ink jet head may be left unused for a time longer than a predetermined time, with a meniscus formed in each ink outlet port. In this case, a drive pulse is applied to each energy-generating element several times, thereby forcing the ink outwards from the ink outlet port and increasing a surface area of the ink from a surface area of the meniscus. Then, a negative pressure is applied in each ink chamber, thereby drawing the ink back toward the ink chamber, thus forming a meniscus again in the ink outlet port. In this condition, a drive pulse is applied to the energy-generating element, thus ejecting an ink droplet from the ink outlet port to record data.

公开(公告)号：US06466335B1

公开(公告)日：2002-10-15

申请号：US09237422

申请日：1999-01-26

Applicant: Hiroki Umezawa ,  Atsushi Kubota ,  Hidehiro Watanabe

Inventor： Hiroki Umezawa ,  Atsushi Kubota ,  Hidehiro Watanabe

IPC: H04N140

CPC classification number: H04N1/40

Abstract: Image data of 256 gradations is converted into that of 4 gradations which can be recorded by a recording head, at a pseudo-halftone processing unit and the converted image data is supplied to a head driving unit. A control signal selector selects a control signal A from a control signal A setting unit when the image data is a natural image, and a control signal B from a control signal B setting unit when the image data is a character or a line drawing. The head driving unit generates an electric signal used to drive the recording head on the basis of gradation information from the pseudo-halftone processing unit and the control signal A or B. With this operation, when the image data is a natural image, recording is carried out with a pixel dot for image formation excellent in gradation property, and when the image data is a character or a line drawing, recording is carried out with a pixel dot for image formation which causes no jaggy or blur to be generated at hatched portions and the like.

Abstract translation: 256个灰度的图像数据被转换为可由记录头在伪半色调处理单元记录的4个灰度的图像数据，并将经转换的图像数据提供给头驱动单元。 当图像数据是自然图像时，控制信号选择器从控制信号A设置单元选择控制信号A，以及当图像数据是字符或线条图时来自控制信号B设置单元的控制信号B. 头驱动单元根据来自伪半色调处理单元和控制信号A或B的灰度信息产生用于驱动记录头的电信号。通过该操作，当图像数据是自然图像时，记录是 进行具有优异的灰度特性的图像形成的像素点，并且当图像数据是字符或线条画时，利用图像形成的像素点进行记录，从而在阴影部分不产生锯齿或模糊 等等。

公开(公告)号：US6046588A

公开(公告)日：2000-04-04

申请号：US970627

申请日：1997-11-14

Applicant: Hidehiro Watanabe

Inventor： Hidehiro Watanabe

IPC: G01R33/48 ,  A61B5/055 ,  G01N24/12 ,  G01R33/483 ,  G01V3/00

CPC classification number: G01R33/4833

Abstract: First and second RF pulses are applied to a .sup.1 H and, simultaneously with or after the application of the second RF pulse, a third RF pulse is applied to the .sup.13 C magnetically coupled to the .sup.1 H, whereby there occurs a first polarization transfer from the spin of the .sup.1 H to the spin of the .sup.13 C. After the first polarization transfer, a fourth RF pulse is applied to the .sup.13 C. After the application of the fourth RF pulse, a fifth RF pulse is applied to the .sup.1 H together with a first slice gradient magnetic pulse. By doing so, those .sup.1 H spins in the first area are selectively excited, there occurs a second polarization transfer from the spin of the .sup.13 C to the spin of the .sup.1 H and those first MR signals are collected from those spins of the .sup.1 H in the first area experiencing the first and second polarization transfers. After the collection of a first MR signal, a sixth RF pulse is applied to the .sup.1 H together with a second slice gradient magnetic field pulse, whereby those .sup.1 H in a second area are selectively excited, there occurs a third polarization transfer from the spin of the .sup.13 C to the spin .sup.1 H and those second MR signals are collected from the spins of the .sup.1 H in the second areas experiencing the first and third polarization transfers.

Abstract translation: 第一和第二RF脉冲被施加到1H，并且在施加第二RF脉冲的同时或之后，将第三RF脉冲施加到磁耦合到1H的13C，由此发生来自旋转的第一极化转移 1H到13C的旋转。 在第一极化转移之后，将第四RF脉冲施加到13C。 在施加第四RF脉冲之后，将第五RF脉冲与第一切片梯度磁脉冲一起施加到1H。 通过这样做，第一区域中的那些1H自旋被选择性地激发，发生从13C的自旋到1H的自旋的第二极化转移，并且从第一区域的1H的这些自旋中收集那些第一MR信号 经历了第一和第二极化转移。 在收集第一MR信号之后，将第六RF脉冲与第二切片梯度磁场脉冲一起施加到1H，由此第二区域中的那些1H被选择性地激发，发生来自第一MR信号的旋转的第三极化转移 13C到自旋1H，并且那些第二MR信号从经历第一和第三极化转移的第二区域中的1H的自旋收集。

公开(公告)号：US5677628A

公开(公告)日：1997-10-14

申请号：US617654

申请日：1996-03-15

Applicant: Hidehiro Watanabe ,  Kazuya Okamoto ,  Koichi Oshio

Inventor： Hidehiro Watanabe ,  Kazuya Okamoto ,  Koichi Oshio

IPC: G01R33/483 ,  G01V3/00

CPC classification number: G01R33/4833

Abstract: In an improved INEPT pulse sequence, an excitation pulse, a refocus pulse and an excitation pulse are sequentially applied for .sup.1 H spins. A refocus pulse and an excitation pulse are sequentially applied for .sup.13 C spins that are spin-spin coupled with the .sup.1 H spins. A magnetic resonance signal is acquired from .sup.1 H spins or .sup.13 C spins. The second refocus pulse for .sup.1 H is applied as a slice selective pulse at a time different from the time the first refocus pulse for .sup.13 C is applied. This allows localization to be achieved without adversely affecting the flip angle of the first refocus pulse for .sup.13 C.

Abstract translation: 在改进的INEPT脉冲序列中，激励脉冲，再聚焦脉冲和激励脉冲依次施加于1H自旋。 对于与1H自旋旋转耦合的13C旋转，依次施加再聚焦脉冲和激发脉冲。 从1H自旋或13C旋转中获取磁共振信号。 用于1H的第二重聚焦脉冲在与施加13C的第一再聚焦脉冲的时间不同的时间作为切片选择脉冲施加。 这允许实现定位，而不会不利地影响13C的第一重新聚焦脉冲的翻转角。

公开(公告)号：US5486719A

公开(公告)日：1996-01-23

申请号：US227519

申请日：1994-04-14

Applicant: Souichi Sugiura ,  Hidehiro Watanabe ,  Seiko Yoshida

Inventor： Souichi Sugiura ,  Hidehiro Watanabe ,  Seiko Yoshida

IPC: H01L21/28 ,  H01L21/027 ,  H01L21/283 ,  H01L21/302 ,  H01L21/3065 ,  H01L23/528 ,  H01L23/532 ,  H01L23/58

CPC classification number: H01L23/5329 ,  H01L23/5283 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10S438/952

Abstract: In a semiconductor device according to this invention, a first insulating film formed on only a pattern formation conductive film on a semiconductor substrate and having a reflectance which is 25% or more and periodically changes in accordance with a change in film thickness of the first insulating film is formed on the semiconductor substrate. A second insulating film having a reflectance which is 25% or more and periodically changes in accordance with a change in film thickness and having a refractive index different from that of the first insulating film is formed on only the first insulating film. A total reflectance of the first and second insulating films is less than 25%. A photosensitive film is formed on the second insulating film and exposed through a reticle to form a predetermined pattern. Etching is performed using the photosensitive film having this pattern to form a conductive pattern.

Abstract translation: 在根据本发明的半导体器件中，第一绝缘膜仅形成在半导体衬底上的图案形成导电膜上，反射率为25％以上，并且根据第一绝缘膜的膜厚度的变化周期性地变化 在半导体衬底上形成膜。 仅在第一绝缘膜上形成具有25％以上的反射率并且根据膜厚度的变化周期性地变化并且具有与第一绝缘膜的折射率不同的折射率的第二绝缘膜。 第一和第二绝缘膜的总反射率小于25％。 感光膜形成在第二绝缘膜上并通过掩模版曝光以形成预定图案。 使用具有该图案的感光膜进行蚀刻以形成导电图案。

公开(公告)号：US4951175A

公开(公告)日：1990-08-21

申请号：US353765

申请日：1989-05-18

Applicant: Kei Kurosawa ,  Hidehiro Watanabe ,  Shizuo Sawada

Inventor： Kei Kurosawa ,  Hidehiro Watanabe ,  Shizuo Sawada

IPC: H01L27/108

CPC classification number: H01L27/10808 ,  H01L27/10835

Abstract: A dynamic random access memory with a stacked capacitor cell structure is disclosed which has a memory cell provided on a silicon substrate and having a MOSFET and a capacitor. An insulative layer is formed on the substrate, and a first polycrystalline silicon layer is formed on this insulative layer. These layers are simultaneously subjected to etching and define a contact hole which penetrates them to come in contact with the surface of the source. A second polycrystalline silicon layer is formed on the first polycrystalline silicon layer to uniformly cover the inner wall of the contact hole and that surface portion of the source which is exposed through the contact hole. The first and second silicon layers are simultaneously subjected to patterning to provide the lower electrode of the capacitor. After a capacitor insulation layer is formed on the second polycrystalline silicon layer, a third polycrystalline silicon layer is formed on the capacitor insulation layer so as to bury a recess of the second polycrystalline silicon layer. The third silicon layer constitutes the upper electrode of the capacitor.

Abstract translation: 公开了一种具有层叠电容器单元结构的动态随机存取存储器，其具有设置在硅衬底上并具有MOSFET和电容器的存储单元。 在基板上形成绝缘层，在该绝缘层上形成第一多晶硅层。 这些层同时进行蚀刻并限定穿透它们的接触孔以与源的表面接触。 在第一多晶硅层上形成第二多晶硅层，以均匀地覆盖接触孔的内壁和通过接触孔露出的源的表面部分。 第一和第二硅层同时进行图案化以提供电容器的下电极。 在第二多晶硅层上形成电容器绝缘层之后，在电容器绝缘层上形成第三多晶硅层，从而埋入第二多晶硅层的凹部。 第三硅层构成电容器的上电极。