公开(公告)号：US20060088986A1

公开(公告)日：2006-04-27

申请号：US11222804

申请日：2005-09-12

Applicant: Jia-Xing Lin ,  Chi-Lin Chen ,  Yu-Cheng Chen ,  Po-Hao Tsai

Inventor： Jia-Xing Lin ,  Chi-Lin Chen ,  Yu-Cheng Chen ,  Po-Hao Tsai

IPC: H01L21/20

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/66757

Abstract: An amorphous silicon layer and at least a heat-retaining layer are formed on a substrate in turn. Wherein, the heat-retaining layer is controlled to have an anti-reflective thickness for reducing the threshold laser energy to effect the melting of the amorphous silicon layer. Then, a laser irradiation process is performed to transform the amorphous silicon layer into a polycrystalline silicon layer. During the laser irratiation process, a portion of the laser energy transmits the heat-retaining layer to effect the melting of the amorphous silicon layer, and another portion of the laser energy is absorbed by the heat-retaining layer.

Abstract translation: 依次在基板上形成非晶硅层和至少一个保温层。 其中，保温层被控制为具有用于降低阈值激光能量以实现非晶硅层熔化的抗反射厚度。 然后，执行激光照射处理以将非晶硅层转变成多晶硅层。 在激光照射过程中，激光能量的一部分透过保温层来实现非晶硅层的熔化，另一部分激光能被保温层吸收。

公开(公告)号：US20060043072A1

公开(公告)日：2006-03-02

申请号：US11194314

申请日：2005-08-01

Applicant: Yu-Cheng Chen ,  Jia-Xing Lin ,  Chi-Lin Chen

Inventor： Yu-Cheng Chen ,  Jia-Xing Lin ,  Chi-Lin Chen

IPC: C03C15/00

CPC classification number: H01L21/02675 ,  C03C15/00 ,  C03C15/02 ,  C03C23/0025 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L21/32115 ,  H01L29/6675 ,  H01L29/78606

Abstract: A method for planarizing polysilicon comprises providing a substrate, forming a dielectric layer on the substrate, forming an amorphous silicon film on the dielectric layer, etching the amorphous silicon film to remove native oxide formed on a surface of the amorphous silicon film, exposing the surface of the amorphous silicon film to a first radiation source to polycrystallize the amorphous silicon film into a polysilicon film, etching the polysilicon film to remove weak bonded silicon formed on a surface of the polysilicon film, and exposing the surface of the polysilicon film to a second radiation source to reflow the polysilicon film.

Abstract translation: 一种用于平坦化多晶硅的方法包括：提供衬底，在衬底上形成电介质层，在电介质层上形成非晶硅膜，蚀刻非晶硅膜以去除在非晶硅膜的表面上形成的自然氧化物， 将所述非晶硅膜施加到第一辐射源以将所述非晶硅膜多晶化为多晶硅膜，蚀刻所述多晶硅膜以去除在所述多晶硅膜的表面上形成的弱键合硅，并将所述多晶硅膜的表面暴露于第二 辐射源来回流多晶硅膜。

公开(公告)号：US20050136612A1

公开(公告)日：2005-06-23

申请号：US10780589

申请日：2004-02-19

Applicant: Jia-Xing Lin ,  Chi-Lin Chen ,  Yu-Cheng Chen

Inventor： Jia-Xing Lin ,  Chi-Lin Chen ,  Yu-Cheng Chen

IPC: H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786 ,  H01L21/76

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

Abstract: An amorphous silicon layer is formed on a substrate, and then a protective layer and a reflective layer are formed in turn to form a film stack on portions of the amorphous silicon layer. The reflective layer is a metal material with reflectivity of laser, and the protective layer is able to prevent metal diffusion. When an excimer laser heats the amorphous silicon layer to crystallize the amorphous silicon, nucleation sites are formed in the amorphous silicon layer under the film stack of the protective layer and the reflective layer. Next, laterally expanding crystallization occurs in the amorphous silicon layer to form poly-silicon having crystal grains with size of micrometers and high grain order.

Abstract translation: 在基板上形成非晶硅层，然后依次形成保护层和反射层，以在非晶硅层的部分上形成膜堆叠。 反射层是具有激光反射率的金属材料，保护层能够防止金属扩散。 当准分子激光器加热非晶硅层以使非晶硅结晶时，在保护层和反射层的膜堆叠下面的非晶硅层中形成成核位置。 接下来，在非晶硅层中发生横向膨胀结晶，形成晶粒大小为微米，晶粒度高的多晶硅。