Abstract:
Inhibitors of STAT3 are disclosed. Methods of using the STAT3 inhibitors in the treatment of diseases and conditions wherein inhibition of STAT3 provides a benefit, like cancers, also are disclosed.
Abstract:
An electrical card connector (100) includes an insulative housing (1), a set of first contacts (21), and a metal shell (4) covering the insulative housing. The insulative housing has a receiving space (15) for receiving a first card and a bottom wall (11) under the receiving space. The bottom wall has a set of slots (111) extending along the first card insertion direction. The slots include a special slot (110) having a protrusion (1101) extending thereinto. The contacts have first retaining portions (214) retained in the insulative housing, first contacting portions (212) received in the slots (111) and bending upwardly into the receiving space (15) for mating with the first card, and first tail portions (215) extending from the first retaining portions for being mounted to a PCB. The first contacts include a special contact (210) having a connecting portion (216) extending along the special slot (110) and located between the first contacting portion (212) and the first retaining portion (214). The connecting portion (216) is sustained upwardly by the protrusion (1101).
Abstract:
A container-type data center, including a container, at least three rows of cabinets, and data processing devices, is provided. The data processing devices are disposed in the cabinets. The at least three rows of the cabinets are disposed in parallel and perpendicular to a long edge of the container. Two neighboring rows of the cabinets of the at least three rows of the cabinets are back-against-back disposed or disposed at intervals, in which when the two neighboring rows of the cabinets are disposed at intervals, a maintenance channel is formed from the space between the two neighboring rows of the cabinets. As the at least three rows of the cabinets are disposed in parallel and perpendicular to the long edge of the container, the cabinets of each row are not limited to a width of the container in a width direction, and a cabinet with a large size can be integrated, thereby improving an integration level of the container.
Abstract:
This invention provides a method for upgrading the network rate of a Passive Optical Network (PON), which mainly includes: upgrading the optical fiber line rate of the central office device, and adapting, by the network terminal device, the working rate of the upstream/downstream line automatically to the optical fiber line rate of the central office device according to a downstream data flow transmitted from the central office device. Using the method of this invention, the network rate of the PON can be upgraded without replacing the network terminal and without a manual intervention.
Abstract:
An electrical card connector defines a receiving space for receiving an electrical card, and includes an insulative housing and an ejecting mechanism retained in the insulative housing. The ejecting mechanism includes a slider, a coil spring for driving the slider moving along an insertion direction of the electrical card, and a latch spring secured on the slider and extending into the receiving space for pressing on the electrical card. The electrical card connector further includes a limiting portion abutting against the latch spring to increase a lock force on the electrical card, thus the electrical card would be prevented from flying out of the electrical card connector.
Abstract:
A method for detecting a failure network terminal in a Passive Optical Network includes: changing timeslots assigned to potential failure network terminals one by one; and determining the failure network terminal according to uplink data frames sent by the potential failure network terminals whose timeslots are changed. Embodiments of the present invention also disclose an apparatus and system for detecting a failure network terminal. The solution of the present invention may detect which Optical Network Unit/Terminal (ONU/ONT) fails and perform the corresponding processing in accordance with embodiments of the present invention, which recovers the system health and improves the network security, stability and self-healing ability.
Abstract:
A card connector includes an insulative housing (1) having a receiving space (10); a set of contacts (2) retained in the insulative housing and protruding into the receiving space for electrical connection to the electrical card; a metal spring member (3) having an arcuate locking arm (34) protruding toward the receiving space for retaining the electrical card in the receiving space; and a metal guiding member (4) having a guiding portion (41) extending along the front-to-back direction for guiding a lateral side of the electrical card and a resisting portion (44) extending from a back end of the guiding portion for resisting a front free end portion (34) of the locking arm outwardly.
Abstract:
A card connector (100) for connecting an electronic card (200) includes an insulative housing (1), a plurality of contacts (2) retained in the insulative housing (1), and an ejector (3). The insulative housing (1) defines a receiving space (10) for receiving the electronic card (200). The ejector (3) includes a slider (31) retained in the insulative housing (1), a spring (32) and a pole (33) mounted between the slider (31) and a rear end of the insulative housing (1). The slider (31) has an inner side wall (310), an inclined face (3100) angled with respect to the inner side wall (3100) to abut against the electronic card (200), and a protrusion (3102) projecting inwardly from the inner side wall (310) to resist the electronic card (200) sideward. Thereby the electronic card (200) can be inserted in or ejected from the card connector (100) smoothly.
Abstract:
A method for preparing a shallow trench isolation comprising the steps of forming at least one trench in a semiconductor substrate, performing an implanting process to implant nitrogen-containing dopants into an upper sidewall of the trench such that the concentration of the nitrogen-containing dopants in the upper sidewall is higher than that in the bottom sidewall of the trench, forming a spin-on dielectric layer filling the trench and covering the surface of the semiconductor substrate, performing a thermal oxidation process to form a silicon oxide layer covering the inner sidewall. Since the nitrogen-containing dopants can inhibit the oxidation rate and the concentration of the nitrogen-containing dopants in the upper inner sidewall is higher than that in the bottom inner sidewall of the trench, the thickness of the silicon oxide layer formed by the thermal oxidation process is larger at the bottom portion than at the upper portion of the trench.