公开(公告)号：US20080318350A1

公开(公告)日：2008-12-25

申请号：US11823061

申请日：2007-06-25

Applicant: Yashraj K. Bhatnagar ,  Krishna Vepa

Inventor： Yashraj K. Bhatnagar ,  Krishna Vepa

IPC: H01L21/66 ,  G01N21/01

CPC classification number: G01N21/9501

Abstract: An apparatus and method for inspecting wafers at a reclaim factory is described. Embodiments of the invention describe an apparatus in which a wafer ID and wafer thickness may be simultaneously measured. A wafer is placed onto a sloped surface and positioned by aligning a notch in the wafer with a pin located on the surface, and by propping the wafer against a pair of laterally opposite restraints. In one embodiment, a foot-switch is used to trigger the simultaneous wafer ID and wafer thickness measurements.

Abstract translation: 描述了在回收工厂检查晶片的装置和方法。 本发明的实施例描述了可以同时测量晶片ID和晶片厚度的装置。 将晶片放置在倾斜表面上并通过将晶片中的凹口与位于表面上的销对准并且通过将晶片抵靠一对横向相对的约束来支撑而定位。 在一个实施例中，脚踏开关用于触发同时晶片ID和晶片厚度测量。

公开(公告)号：US20080318343A1

公开(公告)日：2008-12-25

申请号：US11901884

申请日：2007-09-18

Applicant: Krishna Vepa ,  Yashraj Bhatnagar

Inventor： Krishna Vepa ,  Yashraj Bhatnagar

IPC: H01L21/00

CPC classification number: H01L21/67271 ,  G01N2223/076 ,  G01N2223/6116 ,  H01L21/02032

Abstract: A method for reclaiming a wafer is described. Embodiments of the invention describe a method in which an analytical measurement of a wafer surface is performed in order to determine a wafer type of the wafer. In an embodiment an XRF measurement is performed to determine the composition of a film disposed over a surface of the wafer. The XRF results are correlated with a wafer type. The wafer is then stripped in accordance with the wafer type.

Abstract translation: 描述了一种用于回收晶片的方法。 本发明的实施例描述了为了确定晶片的晶片类型而执行晶片表面的分析测量的方法。 在一个实施例中，执行XRF测量以确定设置在晶片表面上的膜的组成。 XRF结果与晶片类型相关。 然后根据晶片类型剥离晶片。

公开(公告)号：US20070190798A1

公开(公告)日：2007-08-16

申请号：US11737663

申请日：2007-04-19

Applicant: Hong Wang ,  Krishna Vepa ,  Paul Miller

Inventor： Hong Wang ,  Krishna Vepa ,  Paul Miller

IPC: H01L21/302

CPC classification number: H01L21/31111 ,  H01L21/02079 ,  H01L21/31053 ,  Y10S438/911 ,  Y10S438/951

Abstract: A low-k dielectric layer having a composition of silicon, oxygen and carbon, and optionally hydrogen, is removed from a test or production wafer to refresh the wafer. The low-k dielectric layer is removed by immersing a surface of the low-k dielectric layer in a first etching solution having a first composition that is believed to break the Si—O bonds in the dielectric layer; and immersing the surface of the low-k dielectric layer in a second etching solution having a second composition that is believed to break the Si—C bonds in the low-k dielectric layer.

Abstract translation: 具有硅，氧和碳以及任选的氢的组成的低k电介质层从测试或生产晶片中去除以刷新晶片。 通过将低k电介质层的表面浸入具有被认为破坏介电层中的Si-O键的第一组成的第一蚀刻溶液中来去除低k电介质层; 并将低k电介质层的表面浸渍在具有第二组分的第二蚀刻溶液中，该第二组分被认为会破坏低k电介质层中的Si-C键。

公开(公告)号：US20070099310A1

公开(公告)日：2007-05-03

申请号：US11265237

申请日：2005-11-02

Applicant: Krishna Vepa ,  Yashraj Bhatnagar ,  Ronald Rayandayan ,  Hong Wang

Inventor： Krishna Vepa ,  Yashraj Bhatnagar ,  Ronald Rayandayan ,  Hong Wang

IPC: H01L21/00 ,  G06F19/00

CPC classification number: H01L21/67294 ,  H01L21/67288

Abstract: Test substrates used to test semiconductor fabrication tools are reclaimed by reading from a database the process steps performed on each test substrate and selecting a reclamation process from a plurality of reclamation processes. The reclamation process can include crystal lattice defect or metallic contaminant reduction treatments for reclaiming each test substrate. Each test substrate is sorted and placed into a group of test substrates having a common defect or contaminant reduction treatment assigned to the test substrates of the group. Additional features are described and claimed.

Abstract translation: 用于测试半导体制造工具的测试衬底通过从数据库读取在每个测试衬底上执行的工艺步骤并从多个填充工艺中选择回收过程来回收。 回收过程可以包括用于回收每个测试基底的晶格缺陷或金属污染物还原处理。 将每个测试基底分选并放入一组具有分配给该组的测试底物的共同缺陷或污染物还原处理的测试基底。 描述和要求保护附加的特征。

公开(公告)号：US20060160364A1

公开(公告)日：2006-07-20

申请号：US11037647

申请日：2005-01-18

Applicant: Hong Wang ,  Krishna Vepa ,  Paul Miller

Inventor： Hong Wang ,  Krishna Vepa ,  Paul Miller

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/31111 ,  H01L21/02079 ,  H01L21/31053 ,  Y10S438/911 ,  Y10S438/951

Abstract: A low-k dielectric layer having a composition of silicon, oxygen and carbon is removed from a wafer. The low-k dielectric layer is removed by exposing a surface of the low-k dielectric layer to an oxygen-containing gas to oxidized the surface. The oxidized surface is immersed in an etching solution having HF and H2SO4 to etch the low-k dielectric layer. The etched surface is exposed to at least one of (i) an etching solution having H2SO4 and H2O2, and (ii) an RF or microwave energized oxygen-containing gas, to remove the low-k dielectric layer from the wafer.

Abstract translation: 从晶片去除具有硅，氧和碳组成的低k电介质层。 通过将低k电介质层的表面暴露于含氧气体以氧化表面来去除低k电介质层。 将氧化的表面浸入具有HF和H 2 SO 4 S 4的蚀刻溶液中以蚀刻低k电介质层。 蚀刻表面暴露于（i）具有H 2 SO 4 H 2和H 2 O 2 O 2的蚀刻溶液中的至少一种 和（ii）RF或微波激发的含氧气体，以从晶片去除低k电介质层。

公开(公告)号：US06852012B2

公开(公告)日：2005-02-08

申请号：US09808749

申请日：2001-03-15

Applicant: Krishna Vepa ,  Duncan Dobson

Inventor： Krishna Vepa ,  Duncan Dobson

IPC: B24B7/22 ,  B24B37/08 ,  H01L21/00 ,  H01L21/302 ,  B24B1/00

CPC classification number: H01L21/67173 ,  B24B7/228 ,  B24B37/08 ,  H01L21/02008 ,  H01L21/02013 ,  H01L21/67184 ,  H01L21/67219 ,  H01L21/67276

Abstract: The present invention provides exemplary cluster tool systems and methods for processing wafers, such as semiconductor wafers. One method includes providing (710) a wafer having initial thickness variations between two wafer surfaces. The wafer is subjected to grinding (720), polishing (730) and cleaning (740) processes. The wafer is thereafter transferred (750) to a wafer processing chamber to undergo device formation processes (760-780). The wafer processing steps may be undertaken in a series of process modules of sufficiently small size to permit their use in a circuit device fabrication facility. The in-fab processing of wafers reduces the number of process steps, cost and time typically associated with wafer processing prior to device formation thereon.

Abstract translation: 本发明提供了用于处理诸如半导体晶片之类的晶片的示例性簇工具系统和方法。 一种方法包括提供（710）在两个晶片表面之间具有初始厚度变化的晶片。 对晶片进行研磨（720），抛光（730）和清洁（740）处理。 然后将晶片转移（750）到晶片处理室以进行器件形成处理（760-780）。 晶片处理步骤可以在足够小尺寸的一系列处理模块中进行，以允许它们在电路器件制造设备中使用。 晶片的晶片间处理减少了在其上形成器件之前通常与晶片加工相关的工艺步骤的数量，成本和时间。