公开(公告)号：US20190051867A1

公开(公告)日：2019-02-14

申请号：US16162528

申请日：2018-10-17

申请人： Japan Display Inc.

发明人： Takaaki ISHIKAWA ,  Takaaki Kamimura ,  Noriyuki Hirata

IPC分类号： H01L51/56 ,  H01L51/00 ,  H01L27/32 ,  C23C14/24 ,  C23C14/56 ,  H01L21/67 ,  H01L21/677

CPC分类号： H01L51/56 ,  C23C14/24 ,  C23C14/568 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/67751 ,  H01L27/3246 ,  H01L51/0008 ,  H01L51/0011 ,  H01L51/0021

摘要： Disclosed is a manufacturing apparatus of a light-emitting element including: a main transporting route extending in a first direction, the main transporting route comprising first and second transfer devices connected through a first transporting chamber; a sub-transporting route extending in a second direction intersecting the first direction, the sub-transporting route comprising a second transporting chamber connected to the first or second transfer device and a delivery chamber connected to the second transfer chamber; and a plurality of first treatment chambers connected to the delivery chamber. The main transporting route is configured to transfer a substrate to be treated in a horizontal state, and one of the plurality of treatment chambers is configured to hold the substrate in a vertical state during treatment.

公开(公告)号：US20180342409A1

公开(公告)日：2018-11-29

申请号：US15987519

申请日：2018-05-23

申请人： TOKYO ELECTRON LIMITED

发明人： Takehiro SHINDO

IPC分类号： H01L21/67 ,  H01L21/677

CPC分类号： H01L21/67196 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67201 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/67754 ,  H01L21/67781 ,  H01L21/681

摘要： A vacuum transfer module, to which a load-lock module and a plurality of processing modules for processing substrate in a vacuum atmosphere are connected, has therein a substrate transfer unit for transferring the substrate between the load-lock module and the plurality of processing modules. The vacuum transfer module includes: a housing in which a vacuum atmosphere is generated; and a plurality of adaptor attaching portions to which one of a first adaptor for connecting the load-lock module and a second adaptor for connecting the plurality of processing modules is attached, provided at a sidewall of the housing. The adaptor attaching portions are common for the first adaptor and the second adaptor.

公开(公告)号：US20180315585A1

公开(公告)日：2018-11-01

申请号：US16029847

申请日：2018-07-09

申请人： Tokyo Electron Limited

发明人： Atsushi Gomi ,  Tetsuya Miyashita ,  Shinji Furukawa ,  Koji Maeda ,  Masamichi Hara ,  Naoyuki Suzuki ,  Hiroshi Miki ,  Toshiharu Hirata

IPC分类号： H01J37/32 ,  H01L21/67

CPC分类号： H01J37/32733 ,  C23C14/566 ,  C23C14/568 ,  H01J37/32899 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67745 ,  H01L43/12

摘要： An apparatus includes a row of substrate transfer devices 3 which can deliver a wafer W within a transfer chamber; and rows of process modules PM, arranged at right and left sides of the row of the substrate transfer devices along the row, configured to perform processes to the wafer W. The rows of the process modules PM are arranged such that each of the processes can be performed by at least two process modules PM. Thus, when a single process module PM cannot be used, the wafer W can be rapidly transferred to another process module PM which can perform the same process as performed in the corresponding process module. Therefore, even when the single process module PM cannot be used, the processes can be continued to the wafers W without stopping an operation of the apparatus, so that the number of wasted wafers W can be reduced.

公开(公告)号：US20180211872A1

公开(公告)日：2018-07-26

申请号：US15874041

申请日：2018-01-18

申请人： Applied Materials, Inc.

发明人： Zhiyuan WU ,  Nikolaos BEKIARIS ,  Mehul B. NAIK ,  Jin Hee PARK ,  Mark Hyun LEE

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H01L21/288 ,  H01L21/285

CPC分类号： H01L21/76846 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/2885 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67207 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76882 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53252

摘要： In one implementation, a method of forming a cobalt layer on a substrate is provided. The method comprises forming a barrier and/or liner layer on a substrate having a feature definition formed in a first surface of the substrate, wherein the barrier and/or liner layer is formed on a sidewall and bottom surface of the feature definition. The method further comprises exposing the substrate to a ruthenium precursor to form a ruthenium-containing layer on the barrier and/or liner layer. The method further comprises exposing the substrate to a cobalt precursor to form a cobalt seed layer atop the ruthenium-containing layer. The method further comprises forming a bulk cobalt layer on the cobalt seed layer to fill the feature definition.

公开(公告)号：US20180138038A1

公开(公告)日：2018-05-17

申请号：US15853397

申请日：2017-12-22

申请人： Applied Materials, Inc.

发明人： Christopher S. OLSEN ,  Peter STONE ,  Teng-fang KUO ,  Ping Han HSIEH ,  Manoj VELLAIKAL

IPC分类号： H01L21/02 ,  H01L21/687 ,  H01L21/67 ,  H01L21/3065

CPC分类号： H01L21/02658 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/02381 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/68742

摘要： Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

公开(公告)号：US20180076065A1

公开(公告)日：2018-03-15

申请号：US15418506

申请日：2017-01-27

申请人： Applied Materials, Inc.

发明人： Xinyu BAO ,  Hua CHUNG ,  Schubert S. CHU

IPC分类号： H01L21/67 ,  H01L21/02 ,  H01L29/66 ,  H01L21/3065 ,  H01L21/285 ,  H01J37/32 ,  C30B25/04 ,  C30B25/18 ,  C30B29/06 ,  B08B7/00

CPC分类号： H01L21/67207 ,  B08B7/0035 ,  C30B25/04 ,  C30B25/186 ,  C30B29/06 ,  H01J37/32458 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/02532 ,  H01L21/02636 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/3065 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67201 ,  H01L29/66636 ,  H01L29/66795

摘要： Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to an integrated system for processing N-type metal-oxide semiconductor (NMOS) devices. In one implementation, a cluster tool for processing a substrate is provided. The cluster tool includes a pre-clean chamber, an etch chamber, one or more pass through chambers, one or more outgassing chambers, a first transfer chamber, a second transfer chamber, and one or more process chambers. The pre-clean chamber and the etch chamber are coupled to a first transfer chamber. The one or more pass through chambers are coupled to and disposed between the first transfer chamber and the second transfer chamber. The one or more outgassing chambers are coupled to the second transfer chamber. The one or more process chambers are coupled to the second transfer chamber.

公开(公告)号：US09873944B2

公开(公告)日：2018-01-23

申请号：US15340108

申请日：2016-11-01

申请人： Taiwan Semiconductor Manufacturing CO., LTD.

发明人： Chih-Chien Chi ,  Szu-Ping Tung ,  Huang-Yi Huang ,  Ching-Hua Hsieh

IPC分类号： H01L39/00 ,  C23C16/50 ,  H01L21/67 ,  H01L21/768 ,  H01L21/02 ,  C23C16/02 ,  C23C16/06 ,  C23C16/44 ,  H01L21/285 ,  H01L21/687 ,  H01L23/522 ,  H01L23/532

CPC分类号： C23C16/50 ,  C23C16/02 ,  C23C16/06 ,  C23C16/4401 ,  H01L21/02074 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/67184 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/68707 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/53238

摘要： Before depositing a metal capping layer on a metal interconnect in a damascene structure, a remote plasma is used to reduce native oxide formed on the metal interconnect. Accordingly, a remote plasma reducing chamber is integrated in a processing platform for depositing a metal capping layer.

公开(公告)号：US09870921B2

公开(公告)日：2018-01-16

申请号：US15259489

申请日：2016-09-08

申请人： Applied Materials, Inc.

发明人： Christopher S. Olsen ,  Peter Stone ,  Teng-fang Kuo ,  Ping Han Hsieh ,  Manoj Vellaikal

IPC分类号： H01L21/3065 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/02658 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/02381 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/68742

摘要： Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

公开(公告)号：US09862554B2

公开(公告)日：2018-01-09

申请号：US14353153

申请日：2012-10-26

申请人： Brooks Automation, Inc.

发明人： Robert T. Caveney

IPC分类号： H01L21/677 ,  B65G47/90 ,  H01L21/67

CPC分类号： B65G47/901 ,  B65G2201/0297 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/67196 ,  H01L21/67715 ,  H01L21/67733

摘要： A substrate processing system including at least two vertically stacked transport chambers, each of the vertically stacked transport chambers including a plurality of openings arranged to form vertical stacks of openings configured for coupling to vertically stacked process modules, at least one of the vertically stacked transport chambers includes at least one transport chamber module arranged for coupling to another transport chamber module to form a linear transport chamber and another of the at least two stacked transport chambers including at least one transport chamber module arranged for coupling to another transport chamber module to form another linear transport chamber, and a transport robot disposed in each of the transport chamber modules, where a joint of the transport robot is locationally fixed along a linear path formed by the respective linear transport chamber.

公开(公告)号：US20170368680A1

公开(公告)日：2017-12-28

申请号：US15619424

申请日：2017-06-09

申请人： Applied Materials, Inc.

发明人： Karuppasamy Muthukamatchi ,  Damon K. Cox ,  Jeffrey C. Hudgens

IPC分类号： B25J9/00 ,  B25J9/04 ,  H01L21/67 ,  H01L21/677

CPC分类号： B25J9/0087 ,  B25J9/043 ,  H01L21/67184 ,  H01L21/67742

摘要： Robots including spaced upper arms are described. The robot includes first and second upper arms rotatable about a shoulder axis wherein the second upper arm is spaced from the first upper arm. The other robot components (first and second forearms, first and second wrist members, and first and second end effectors) are interleaved in the space between the first and second upper arms. Each of the first and second upper arms and first and second forearms may be individually and independently controlled. Methods of operating the robot and electronic device processing systems including the robot are provided, as are numerous other aspects.