Multi-chamber Configuration
    5.
    发明公开

    公开(公告)号:US20240087924A1

    公开(公告)日:2024-03-14

    申请号:US18137855

    申请日:2023-04-21

    摘要: The present invention provides a multi-chamber plasma processing system. A load lock chamber having an atmospheric gate valve and a vacuum gate valve is operatively connected to a transport chamber through the vacuum gate valve. A process chamber is mounted on the load lock chamber wherein the process chamber has only one gate valve that is positioned between the transport chamber and the process chamber. The process chamber does not have an atmospheric gate valve. A substrate handling robot is mounted within the transport chamber and operatively communicates with the load lock chamber through the vacuum gate valve and operatively communicates with the process chamber through the only gate valve of the process chamber.