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公开(公告)号:US12080571B2
公开(公告)日:2024-09-03
申请号:US16923792
申请日:2020-07-08
IPC分类号: H01L21/67 , C23C14/35 , H01L21/677 , H01L21/687
CPC分类号: H01L21/67184 , C23C14/35 , H01L21/67167 , H01L21/67196 , H01L21/67742 , H01L21/67766 , H01L21/68707
摘要: Embodiments disclosed herein include a substrate processing module and a method of moving a workpiece. The substrate processing module includes a shutter stack and two process stations. The shutter stack is disposed between the process stations. The method of moving a workpiece includes moving a supporting portion from a first location to a shutter stack in a first direction, retrieving the workpiece from the shutter stack, and moving the supporting portion to a second location. The transfer chamber assembly and method allows for moving workpieces to and from the shutter stack to the two process stations. A central transfer robot of the substrate processing module is configured to grip both substrates and shutter discs, allowing for one robot when typically two robots would be required.
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公开(公告)号:US20240258136A1
公开(公告)日:2024-08-01
申请号:US18430398
申请日:2024-02-01
IPC分类号: H01L21/67 , C23C14/35 , H01L21/677 , H01L21/687
CPC分类号: H01L21/67184 , C23C14/35 , H01L21/67167 , H01L21/67196 , H01L21/67742 , H01L21/67766 , H01L21/68707
摘要: Embodiments disclosed herein include a substrate processing module and a method of moving a workpiece. The substrate processing module includes a shutter stack and two process stations. The shutter stack is disposed between the process stations. The method of moving a workpiece includes moving a supporting portion from a first location to a shutter stack in a first direction, retrieving the workpiece from the shutter stack, and moving the supporting portion to a second location. The transfer chamber assembly and method allows for moving workpieces to and from the shutter stack to the two process stations. A central transfer robot of the substrate processing module is configured to grip both substrates and shutter discs, allowing for one robot when typically two robots would be required.
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公开(公告)号:US20240153794A1
公开(公告)日:2024-05-09
申请号:US18503852
申请日:2023-11-07
发明人: Jairo Terra Moura
IPC分类号: H01L21/67 , B25J9/16 , B25J13/08 , G06F18/22 , G06T7/73 , G06V20/10 , H01L21/687 , H04N23/54
CPC分类号: H01L21/67184 , B25J9/1612 , B25J9/1692 , B25J9/1697 , B25J13/08 , G06F18/22 , G06T7/73 , G06V20/10 , H01L21/67259 , H01L21/68707 , H04N23/54
摘要: A substrate transport apparatus includes a transport chamber, a drive section, a robot arm, an imaging system with a camera mounted through a mounting interface of the drive section in a predetermined location with respect to the transport chamber and disposed to image part of the arm, and a controller connected to the imaging system and configured to image, with the camera, the arm moving to or in the predetermined location, the controller effecting capture of a first image of the arm on registry of the arm proximate to or in the predetermined location, the controller is configured to calculate a positional variance of the arm from comparison of the first image with a calibration image of the arm, and determine a motion compensation factor changing an extended position of the arm. Each camera effecting capture of the first image is disposed inside the perimeter of the mounting interface.
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公开(公告)号:US11932950B2
公开(公告)日:2024-03-19
申请号:US18097152
申请日:2023-01-13
发明人: Yuanhong Guo , Sheng Michael Guo , Marek W. Radko , Steven Victor Sansoni , Nagendra Madiwal , Matvey Farber , Pingping Gou , Song-Moon Suh , Jeffrey C. Hudgens , Yuji Murayama , Anurag Bansal , Shaofeng Chen , Michael Kuchar
CPC分类号: C23F17/00 , B08B3/04 , B23C3/00 , C23C14/5873 , C23F1/16 , C23F1/20 , H01L21/67184
摘要: A method includes machining a raw surface of a metal component to remove first native oxide from a metal base of the metal component to generate an as-machined surface of the metal component. A second native oxide is formed on the metal base of the as-machined surface of the metal component subsequent to the machining. The method further includes, subsequent to the machining, performing operations to generate a finished surface of the metal component. The operations include a surface machining of the as-machined surface of the metal component to remove the second native oxide.
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公开(公告)号:US20240087924A1
公开(公告)日:2024-03-14
申请号:US18137855
申请日:2023-04-21
申请人: HINE AUTOMATION, LLC
发明人: Joseph Arthur Kraus
IPC分类号: H01L21/67 , C23C14/56 , H01L21/677
CPC分类号: H01L21/67201 , C23C14/566 , C23C14/568 , H01L21/67184 , H01L21/67742
摘要: The present invention provides a multi-chamber plasma processing system. A load lock chamber having an atmospheric gate valve and a vacuum gate valve is operatively connected to a transport chamber through the vacuum gate valve. A process chamber is mounted on the load lock chamber wherein the process chamber has only one gate valve that is positioned between the transport chamber and the process chamber. The process chamber does not have an atmospheric gate valve. A substrate handling robot is mounted within the transport chamber and operatively communicates with the load lock chamber through the vacuum gate valve and operatively communicates with the process chamber through the only gate valve of the process chamber.
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公开(公告)号:US11901175B2
公开(公告)日:2024-02-13
申请号:US17859929
申请日:2022-07-07
申请人: ASM IP Holding B.V.
IPC分类号: H01L21/02 , C23C16/24 , H01J37/32 , H01L21/768 , C23C16/455 , C23C16/34 , H01L21/687 , H01L21/67
CPC分类号: H01L21/0217 , C23C16/345 , C23C16/45536 , C23C16/45553 , H01J37/32724 , H01L21/0228 , H01L21/0234 , H01L21/02315 , H01L21/68714 , H01L21/76897 , H01J37/32899 , H01J2237/3321 , H01L21/02208 , H01L21/67184
摘要: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.
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公开(公告)号:US20230282492A1
公开(公告)日:2023-09-07
申请号:US18197455
申请日:2023-05-15
发明人: Toshiaki TOYOMAKI
IPC分类号: H01L21/67 , H01L21/3065 , H01J37/305
CPC分类号: H01L21/67069 , H01L21/67155 , H01L21/67196 , H01L21/3065 , H01L21/67184 , H01L21/67173 , H01J37/305
摘要: A substrate processing system includes a first substrate processing chamber, a first substrate transfer chamber connected to the first substrate processing chamber, a second substrate processing chamber, and a second substrate transfer chamber connected to the second substrate processing chamber. The substrate processing system further includes a buffer chamber connected between the first substrate transfer chamber and the second substrate transfer chamber, the buffer chamber having at least one substrate holder. At least a part of the buffer chamber and at least one of the first substrate transfer chamber or the second substrate transfer chamber are vertically overlapped with each other.
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公开(公告)号:US20230230859A1
公开(公告)日:2023-07-20
申请号:US17919911
申请日:2021-07-12
发明人: Adel George TANNOUS , Schubert S. CHU , Shu-Kwan LAU , Kartik Bhupendra SHAH , Zuoming ZHU , Ala MORADIAN , Surajit KUMAR , Srinivasa RANGAPPA , Chia Cheng CHIN , Vishwas Kumar PANDEY
IPC分类号: H01L21/67 , H01L21/687 , H05B3/00
CPC分类号: H01L21/67115 , H01L21/67184 , H01L21/6719 , H01L21/68771 , H05B3/0047
摘要: A batch processing chamber and a process kit for use therein are provided. The process kit includes an outer liner having an upper outer liner and a lower outer liner, an inner liner, and a top plate and a bottom plate attached to an inner surface of the inner liner. The top plate and the bottom plate form an enclosure together with the inner liner, and a cassette is disposed within the enclosure. The cassette including shelves configured to retain a plurality of substrates thereon. The inner liner has inlet openings disposed on an injection side of the inner liner and configured to be in fluid communication with a gas injection assembly of a processing chamber, and outlet openings disposed on an exhaust side of the inner liner and configured to be in fluid communication with a gas exhaust assembly of the processing chamber. The inner surfaces of the enclosure comprise material configured to cause black-body radiation within the enclosure.
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公开(公告)号:US20230151497A1
公开(公告)日:2023-05-18
申请号:US18097152
申请日:2023-01-13
发明人: Yuanhong Guo , Sheng Michael Guo , Marek W. Radko , Steven Victor Sansoni , Nagendra Madiwal , Matvey Farber , Pingping Gou , Song-Moon Suh , Jeffrey C. Hudgens , Yuji Murayama , Anurag Bansal , Shaofeng Chen , Michael Kuchar
摘要: A method includes machining a raw surface of a metal component to remove first native oxide from a metal base of the metal component to generate an as-machined surface of the metal component. A second native oxide is formed on the metal base of the as-machined surface of the metal component subsequent to the machining. The method further includes, subsequent to the machining, performing operations to generate a finished surface of the metal component. The operations include a surface machining of the as-machined surface of the metal component to remove the second native oxide.
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公开(公告)号:US20190051867A1
公开(公告)日:2019-02-14
申请号:US16162528
申请日:2018-10-17
申请人: Japan Display Inc.
CPC分类号: H01L51/56 , C23C14/24 , C23C14/568 , H01L21/67173 , H01L21/67184 , H01L21/67745 , H01L21/67748 , H01L21/67751 , H01L27/3246 , H01L51/0008 , H01L51/0011 , H01L51/0021
摘要: Disclosed is a manufacturing apparatus of a light-emitting element including: a main transporting route extending in a first direction, the main transporting route comprising first and second transfer devices connected through a first transporting chamber; a sub-transporting route extending in a second direction intersecting the first direction, the sub-transporting route comprising a second transporting chamber connected to the first or second transfer device and a delivery chamber connected to the second transfer chamber; and a plurality of first treatment chambers connected to the delivery chamber. The main transporting route is configured to transfer a substrate to be treated in a horizontal state, and one of the plurality of treatment chambers is configured to hold the substrate in a vertical state during treatment.
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