公开(公告)号：US20060220183A1

公开(公告)日：2006-10-05

申请号：US11392739

申请日：2006-03-30

申请人： Makoto Asai ,  Muneo Tamura ,  Kazuhiko Sugiura ,  Tetsuo Fujii

发明人： Makoto Asai ,  Muneo Tamura ,  Kazuhiko Sugiura ,  Tetsuo Fujii

IPC分类号： H01L29/06 ,  H01L21/00

CPC分类号： H01L21/67132 ,  H01L21/78

摘要： A semiconductor wafer includes: a first layer having a first refraction index; a second layer having a second refraction index, which is different from the first refraction index; a plurality of semiconductor elements; and a layer removal region. The semiconductor elements are capable of being separated each other by irradiating a laser beam on the first layer along with a cutting line. The laser beam irradiation provides a modified region in the first layer so that the semiconductor elements are capable of being separated by a crack generated in the modified region. The layer removal region is provided such that the second layer in the layer removal region is removed from the wafer.

摘要翻译： 半导体晶片包括：具有第一折射率的第一层; 具有与第一折射率不同的第二折射率的第二层; 多个半导体元件; 和层去除区域。 半导体元件能够通过与切割线一起照射第一层上的激光束而彼此分离。 激光束照射在第一层中提供改性区域，使得半导体元件能够被改性区域中产生的裂纹分离。 提供了去除层，使得去除层中的第二层从晶片上去除。

公开(公告)号：US5877095A

公开(公告)日：1999-03-02

申请号：US698841

申请日：1996-08-16

申请人： Muneo Tamura ,  Takeshi Yamauchi ,  Katuhide Niwa ,  Takeshi Fukazawa ,  Akira Kuroyanagi

发明人： Muneo Tamura ,  Takeshi Yamauchi ,  Katuhide Niwa ,  Takeshi Fukazawa ,  Akira Kuroyanagi

IPC分类号： H01L21/8247 ,  C23C16/34 ,  H01L21/314 ,  H01L21/318 ,  H01L23/31 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  H01L21/306

CPC分类号： C23C16/347 ,  H01L21/3185 ,  H01L23/3171 ,  H01L2924/0002

摘要： A semiconductor device includes a semiconductor element. A silicon nitride film covers the semiconductor element. The silicon nitride film is made of Si.sub.X N.sub.Y H.sub.Z, where X, Y, and Z denote atomic fractions of Si, N, and H resptively. The silicon nitride film relates to an optical absorption edge wavelength shorter than 254 nm. A mean area of regions surrounded by crystal-like grain boundaries at a surface of the silicon nitride film is equal to 4.5.times.10.sup.4 nm.sup.2 or more. The semiconductor element may include a memory element from which information can be erased by exposure to ultraviolet rays.

摘要翻译： 半导体器件包括半导体元件。 氮化硅膜覆盖半导体元件。 氮化硅膜由SiXNYHZ制成，其中X，Y和Z表示Si，N和H的原子级分。 氮化硅膜涉及短于254nm的光吸收边缘波长。 在氮化硅膜表面的晶状晶界包围的区域的平均面积为4.5×10 4 nm 2以上。 半导体元件可以包括可通过暴露于紫外线而从其中擦除信息的存储元件。