公开(公告)号：US5592004A

公开(公告)日：1997-01-07

申请号：US534976

申请日：1995-09-28

申请人： Muneo Tamura ,  Takeshi Yamauchi ,  Katuhide Niwa ,  Takeshi Fukazawa ,  Akira Kuroyanagi ,  Tooru Yamaoka

发明人： Muneo Tamura ,  Takeshi Yamauchi ,  Katuhide Niwa ,  Takeshi Fukazawa ,  Akira Kuroyanagi ,  Tooru Yamaoka

IPC分类号： H01L21/8247 ,  C23C16/34 ,  H01L21/314 ,  H01L21/318 ,  H01L23/31 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  H01L29/06 ,  H01L29/78

CPC分类号： C23C16/347 ,  H01L21/3185 ,  H01L23/3171 ,  H01L2924/0002

摘要： A semiconductor device includes a semiconductor element. A silicon nitride film covers the semiconductor element. The silicon nitride film is made of Si.sub.X N.sub.Y H.sub.Z, where X, Y, and Z denote atomic fractions of Si, N, and H respectively. The silicon nitride film relates to an optical absorption edge wavelength shorter than 254 nm. A mean area of regions surrounded by crystal-like grain boundaries at a surface of the silicon nitride film is equal to 4.5.times.10.sup.4 nm.sup.2 or more. The semiconductor element may include a memory element from which information can be erased by exposure to ultraviolet rays.

摘要翻译： 半导体器件包括半导体元件。 氮化硅膜覆盖半导体元件。 氮化硅膜由SiXNYHZ制成，其中X，Y和Z分别表示Si，N和H的原子级分。 氮化硅膜涉及短于254nm的光吸收边缘波长。 在氮化硅膜表面的晶状晶界包围的区域的平均面积为4.5×10 4 nm 2以上。 半导体元件可以包括可通过暴露于紫外线而从其中擦除信息的存储元件。

公开(公告)号：US5877095A

公开(公告)日：1999-03-02

申请号：US698841

申请日：1996-08-16

申请人： Muneo Tamura ,  Takeshi Yamauchi ,  Katuhide Niwa ,  Takeshi Fukazawa ,  Akira Kuroyanagi

发明人： Muneo Tamura ,  Takeshi Yamauchi ,  Katuhide Niwa ,  Takeshi Fukazawa ,  Akira Kuroyanagi

IPC分类号： H01L21/8247 ,  C23C16/34 ,  H01L21/314 ,  H01L21/318 ,  H01L23/31 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  H01L21/306

CPC分类号： C23C16/347 ,  H01L21/3185 ,  H01L23/3171 ,  H01L2924/0002

摘要： A semiconductor device includes a semiconductor element. A silicon nitride film covers the semiconductor element. The silicon nitride film is made of Si.sub.X N.sub.Y H.sub.Z, where X, Y, and Z denote atomic fractions of Si, N, and H resptively. The silicon nitride film relates to an optical absorption edge wavelength shorter than 254 nm. A mean area of regions surrounded by crystal-like grain boundaries at a surface of the silicon nitride film is equal to 4.5.times.10.sup.4 nm.sup.2 or more. The semiconductor element may include a memory element from which information can be erased by exposure to ultraviolet rays.

摘要翻译： 半导体器件包括半导体元件。 氮化硅膜覆盖半导体元件。 氮化硅膜由SiXNYHZ制成，其中X，Y和Z表示Si，N和H的原子级分。 氮化硅膜涉及短于254nm的光吸收边缘波长。 在氮化硅膜表面的晶状晶界包围的区域的平均面积为4.5×10 4 nm 2以上。 半导体元件可以包括可通过暴露于紫外线而从其中擦除信息的存储元件。

公开(公告)号：US07498238B2

公开(公告)日：2009-03-03

申请号：US11710910

申请日：2007-02-27

申请人： Muneo Tamura

发明人： Muneo Tamura

IPC分类号： H01L21/46 ,  H01L21/78 ,  H01L21/301

CPC分类号： H01L21/67132 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  H01L21/67092 ,  H01L21/78 ,  Y10T225/12

摘要： A method for dicing a wafer including first and second layers is provided. A front surface of the first layer contacts a backside surface of the second layer. The method includes: forming a sealing film on the second layer; cutting the first layer from a backside surface along with a cutting line to form a notch; removing the sealing film; irradiating a laser beam on the front surface of the second layer along with the cutting line to form a reforming region in the second layer by a multi photon absorption effect; and dividing the wafer along with the cutting line from the reforming region as a starting point of dividing.

摘要翻译： 提供了一种用于切割包括第一和第二层的晶片的方法。 第一层的前表面接触第二层的背面。 该方法包括：在第二层上形成密封膜; 与切割线一起从背面切割第一层以形成切口; 去除密封膜; 沿着切割线将激光束照射在第二层的前表面上，以通过多光子吸收效应在第二层中形成重整区域; 并且将切割线与重整区域一起划分为切割起点。

公开(公告)号：US20070111480A1

公开(公告)日：2007-05-17

申请号：US11586558

申请日：2006-10-26

申请人： Yumi Maruyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Hirotsugu Funato

发明人： Yumi Maruyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Hirotsugu Funato

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  B23K26/009 ,  B23K26/18 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/67132

摘要： A semiconductor wafer has two faces, one of which is a laser light incident face. A dicing sheet is attached to the other face of the wafer, so that it is stretched to thereby apply tensile stress to a laser-reformed region and cause cutting with the reformed region taken as a starting point for cutting. A protection layer, such as light scattering projections and depressions, a light scattering member or a light reflecting member, is provided between the wafer and the dicing sheet to scatter or reflect the laser light passing through the wafer. Thus, the dicing sheet can be protected from being damaged because the laser light converging point is not formed in the dicing sheet.

摘要翻译： 半导体晶片具有两个面，其中之一是激光入射面。 将切割片安装在晶片的另一面上，使其被拉伸，从而对激光重整区域施加拉伸应力，并以重新形成的区域作为切割起点进行切割。 在晶片和切割片之间设置有诸如光散射凸起和凹陷的保护层，光散射部件或光反射部件，以散射或反射穿过晶片的激光。 因此，由于在切割片中没有形成激光聚光点，所以可以防止切割片的损伤。

公开(公告)号：US20070111390A1

公开(公告)日：2007-05-17

申请号：US11598654

申请日：2006-11-14

申请人： Atsushi Komura ,  Tetsuo Fujii ,  Muneo Tamura ,  Makoto Asai

发明人： Atsushi Komura ,  Tetsuo Fujii ,  Muneo Tamura ,  Makoto Asai

IPC分类号： H01L21/00 ,  H01L23/02

CPC分类号： H01L21/67132 ,  B23K26/009 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3192 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/00

摘要： A device separated from a wafer includes: a chip having a sidewall, which is provided by a dicing surface of the wafer in a case where the device is separated from the wafer; and a protection member disposed on the sidewall of the chip for protecting the chip from being contaminated by a dust from the dicing surface. In the device, the dicing surface of the wafer is covered with the protection member so that the chip is prevented from contaminated with the dust.

摘要翻译： 与晶片分离的器件包括：具有侧壁的芯片，其在器件与晶片分离的情况下由晶片的切割表面提供; 以及设置在芯片的侧壁上的保护构件，用于保护芯片免受来自切割表面的灰尘的污染。 在该装置中，晶片的切割面被保护部件覆盖，从而防止芯片被灰尘污染。

公开(公告)号：US07550367B2

公开(公告)日：2009-06-23

申请号：US11199132

申请日：2005-08-09

申请人： Muneo Tamura ,  Yasuo Souki

发明人： Muneo Tamura ,  Yasuo Souki

IPC分类号： H01L21/00

CPC分类号： H01L21/67092 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68336

摘要： A method of separating a semiconductor substrate having an implementation member attached thereon includes a dividing process for at least the implementation member on the semiconductor substrate along a separation line, a placing process for film member on a same side as the implementation member, a forming process area by irradiating a laser beam from at least one of a first side of the semiconductor substrate having the implementation member and a second side that is an opposite side of the first side of the semiconductor substrate along the separation line with a focusing point of the laser beam aligned with a substance in the semiconductor substrate and severing/removing at least one semiconductor chip at the separation line from the semiconductor substrate.

摘要翻译： 一种分离其上具有实施部件的半导体衬底的方法包括：沿着分离线至少在半导体衬底上的实现部件的分割处理，与构成部件同一侧的膜部件的放置工序，成形工序 区域，通过从具有实施构件的半导体衬底的第一侧和沿着分离线的与半导体衬底的第一侧相反的一侧的至少一个的激光束照射激光束，激光束的聚焦点 光束与半导体衬底中的物质对准，并且在分离线处切断/去除半导体衬底上的至少一个半导体芯片。

公开(公告)号：US20070111481A1

公开(公告)日：2007-05-17

申请号：US11598651

申请日：2006-11-14

申请人： Muneo Tamura ,  Hiromi Ooniwa

发明人： Muneo Tamura ,  Hiromi Ooniwa

IPC分类号： H01L21/00 ,  H01L23/544

CPC分类号： H01L21/78 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011

摘要： A laser beam is applied to an interior of a wafer through a top surface to form modified areas in a plurality of layers of modified area groups. Intervals of the modified areas in one of the layers of modified area groups differ from intervals of the modified areas in another one of the layers of the modified area groups, which is closer to the top surface of the wafer in comparison to the one of the layers of the modified area groups.

摘要翻译： 通过顶表面将激光束施加到晶片的内部，以形成多个经修改的区域组的改质区域。 修改区域组中的一个层中的修改区域的间隔与修改区域组的另一个层中的修改区域的间隔不同，其更接近晶片的顶部表面，与 修改区域组的层。

公开(公告)号：US20060040472A1

公开(公告)日：2006-02-23

申请号：US11199132

申请日：2005-08-09

申请人： Muneo Tamura ,  Yasuo Souki

发明人： Muneo Tamura ,  Yasuo Souki

IPC分类号： H01L21/78

CPC分类号： H01L21/67092 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68336

摘要： A method of separating a semiconductor substrate having an implementation member attached thereon includes a dividing process for at least the implementation member on the semiconductor substrate along a separation line, a placing process for film member on a same side as the implementation member, a forming process area by irradiating a laser beam from at least one of a first side of the semiconductor substrate having the implementation member and a second side that is an opposite side of the first side of the semiconductor substrate along the separation line with a focusing point of the laser beam aligned with a substance in the semiconductor substrate and severing/removing at least one semiconductor chip at the separation line from the semiconductor substrate.

公开(公告)号：US4374038A

公开(公告)日：1983-02-15

申请号：US232022

申请日：1981-01-11

申请人： Muneo Tamura

发明人： Muneo Tamura

IPC分类号： A63H19/14 ,  C09K3/30

CPC分类号： A63H19/14

摘要： A fuming or smoke-emitting device used on a model steam locomotive of railway model driven by an electric motor. It is therefore required to reduce the fuming device as much as possible and to simulate the smoke exhausted from the actual locomotive in the smoking state. This fuming device comprises a container which has therein Nichrome wire and is provided at its upper portion with perforation for exhausting the fume or smoke. The container is filled with water and oil having non-affinity with each other. When the heater is heated, the water is boiled to thereby stir the oil. Thus, the oil is burnt, and the smoke of fume thus produced is exhausted by the steam. The fuming state by this combustion phenomenon simulated the smoke exhausted from the actual locomotive, because this fume thus exhausted from the locomotive is similar in principle to the utilization of the steam exhausted usually from the normal cylinder.

摘要翻译： PCT No.PCT / JP80 / 00095 Sec。 371日期：1981年1月11日 102（e）日期1981年1月11日PCT提交1980年5月7日PCT公布。 第WO80 / 02514号公报 日期：1980年11月27日。一种用于由电动机驱动的铁路车型模型蒸汽机车上使用的发烟或发烟装置。 因此，需要尽可能地减少发烟装置，并且模拟在吸烟状态下从实际机车排出的烟雾。 这个发烟装置包括一个容器，其上装有镍铬合金线，并在其上部设有用于排出烟或烟的穿孔。 容器充满彼此不亲和的水和油。 当加热器加热时，将水煮沸，从而搅拌油。 因此，油被燃烧，并且由此产生的烟雾被蒸汽排出。 这种燃烧现象的发烟状态模拟了从实际机车排出的烟雾，因为这样从机车中排出的烟气原则上与通常从正常气缸排出的蒸汽的利用相似。

公开(公告)号：US07968432B2

公开(公告)日：2011-06-28

申请号：US11598653

申请日：2006-11-14

申请人： Muneo Tamura ,  Tetsuo Fujii

发明人： Muneo Tamura ,  Tetsuo Fujii

IPC分类号： H01L21/76

CPC分类号： B23K26/0608 ,  B23K26/0617 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  B28D5/00

摘要： A laser processing apparatus has one laser light source that simultaneously radiates laser beams with two wavelengths. Depth positions of focusing points for laser beams are gradually changed in a wafer. Three sets of modifying region groups, i.e., six layers of modifying region groups, are successively formed. One set of modifying region groups constitutes two layers and is formed at a time. The modifying region groups are separated, adjoined, or overlapped with each other along an estimated cut line of the wafer in a depth direction from a surface thereof.

摘要翻译： 激光加工装置具有同时辐射具有两个波长的激光束的一个激光光源。 激光束聚焦点的深度位置在晶片中逐渐变化。 连续形成3组修饰区域基团，即六层修饰区域基团。 一组修改区域组构成两层，一次形成。 修改区域组沿着晶片的从其表面的深度方向的估计切割线彼此分离，邻接或重叠。