Image sensor with embedded photodiode region and fabrication method thereof
    21.
    发明申请
    Image sensor with embedded photodiode region and fabrication method thereof 有权
    具有嵌入式光电二极管区域的图像传感器及其制造方法

    公开(公告)号:US20060208285A1

    公开(公告)日:2006-09-21

    申请号:US11248320

    申请日:2005-10-13

    Abstract: An image sensor in which a plurality of pixels having at least a photodiode, a reset transistor, and source follower transistor are formed, wherein each pixel comprises an electrical-charge transfer gate transistor between the photodiode and reset transistor, and a floating diffusion region constituting a node connecting the reset transistor and transfer gate transistor is connected to the gate of the source follower transistor. Further, a photodiode region is embedded below a well region in which the reset transistor and source follower transistor of each pixel are formed. In addition, the photodiode region is not formed below at least a partial region of the floating diffusion region.

    Abstract translation: 一种图像传感器,其中形成至少具有光电二极管的多个像素,复位晶体管和源极跟随器晶体管,其中每个像素包括在光电二极管和复位晶体管之间的电荷传输门晶体管,以及构成 连接复位晶体管和传输栅极晶体管的节点连接到源极跟随器晶体管的栅极。 此外,光电二极管区域嵌入在其中形成每个像素的复位晶体管和源极跟随器晶体管的阱区域的下方。 此外,光电二极管区域不形成在浮动扩散区域的至少一部分区域之下。

    CMOS image sensor for reducing kTC noise, reset transistor control circuit used in the image sensor and voltage switch circuit used in the control circuit
    22.
    发明申请
    CMOS image sensor for reducing kTC noise, reset transistor control circuit used in the image sensor and voltage switch circuit used in the control circuit 审中-公开
    用于降低kTC噪声的CMOS图像传感器,用于图像传感器中的复位晶体管控制电路和控制电路中使用的电压开关电路

    公开(公告)号:US20060001752A1

    公开(公告)日:2006-01-05

    申请号:US10980156

    申请日:2004-11-04

    CPC classification number: H04N5/363

    Abstract: The present invention can be applied to a CMOS image sensor in which each pixel circuit of an active pixel sensor array includes a photoelectric conversion element for converting input light into electricity and a switch transistor for controlling the supply of a reset voltage for resetting the photoelectric conversion element to a predetermined voltage, to the photoelectric conversion element. The CMOS image sensor comprises a control circuit for assigning a control signal applied to a control electrode of the switch transistor. The control circuit outputs a first voltage much higher than a supply voltage of the CMOS image sensor so as to make an ON resistance of the switch transistor sufficiently small in the first part of a reset period of the photoelectric conversion element and outputs a second voltage lower than a supply voltage of the CMOS image sensor in the latter part of a reset period of the photoelectric conversion element.

    Abstract translation: 本发明可以应用于CMOS图像传感器,其中有源像素传感器阵列的每个像素电路包括用于将输入光转换为电的光电转换元件和用于控制复位电压的供应的开关晶体管,用于复位光电转换 元件到预定电压。 CMOS图像传感器包括用于分配施加到开关晶体管的控制电极的控制信号的控制电路。 控制电路输出比CMOS图像传感器的电源电压高得多的第一电压,以使得在光电转换元件的复位周期的第一部分中开关晶体管的导通电阻足够小,并输出第二电压 比在光电转换元件的复位周期的后半部分中的CMOS图像传感器的电源电压。

    Light output control circuit with a warning function of deteriorated light output
    23.
    发明授权
    Light output control circuit with a warning function of deteriorated light output 失效
    光输出控制电路具有恶化光输出的警告功能

    公开(公告)号:US06728495B1

    公开(公告)日:2004-04-27

    申请号:US09521447

    申请日:2000-03-07

    CPC classification number: H04B10/504 H04B10/564

    Abstract: A light output control circuit to update light output synchronously with input data in burst signal transmission system is disclosed. The circuit has a function of issuing light deterioration warning unerringly, which includes: a monitoring portion to detect light output emitted from a light emission element driven in accordance with transmission data; a level comparator to compare a monitoring signal outputted from the monitoring portion with a reference signal; a data detection portion to detect the existence of the transmission data; and an output controller to determine whether a light output deterioration warning is to be issued using an output signal of the data detection portion and an output signal of the level comparator.

    Abstract translation: 公开了一种用于在脉冲串信号传输系统中更新与输入数据同步输出的光输出控制电路。 该电路具有发出光劣化警告的功能,其特征在于,包括:监视部,其检测从根据发送数据驱动的发光元件发出的光输出; 电平比较器,用于将从监视部分输出的监视信号与参考信号进行比较; 数据检测部分,用于检测发送数据的存在; 以及输出控制器,用于使用数据检测部分的输出信号和电平比较器的输出信号来确定是否发出光输出恶化警告。

    Optical transmitter circuit
    24.
    发明授权
    Optical transmitter circuit 失效
    光发射机电路

    公开(公告)号:US06597485B1

    公开(公告)日:2003-07-22

    申请号:US09517621

    申请日:2000-03-03

    CPC classification number: H04B10/504 H04B10/564

    Abstract: An optical transmitter circuit including a light receiving element, such as a photodiode, which monitors the optical output of a light emitting element such as a semiconductor laser. A current-voltage converting circuit supplies a drive current from a drive circuit to the light emitting element and converts the output voltage of the light receiving element into voltage. An APC amplifier compares the converted output signals and a reference signal, and a hold circuit holds the output signal of the APC amplifier and uses the output signal as a current control signal of the drive circuit. A “1” continuous signal detecting circuit detects the continuation of “1” in a specified number of bits in the input data (DATA) and updates the hold value in the hold circuit.

    Abstract translation: 一种包括诸如光电二极管的光接收元件的光发送器电路,其监测诸如半导体激光器的发光元件的光输出。 电流电压转换电路将来自驱动电路的驱动电流提供给发光元件,并将光接收元件的输出电压转换为电压。 APC放大器将转换的输出信号和参考信号进行比较,保持电路保持APC放大器的输出信号,并使用输出信号作为驱动电路的电流控制信号。 “1”连续信号检测电路检测输入数据(DATA)中指定位数的“1”继续,并更新保持电路中的保持值。

    Lighting emitting element driving circuit
    25.
    发明授权
    Lighting emitting element driving circuit 失效
    照明发光元件驱动电路

    公开(公告)号:US06469455B1

    公开(公告)日:2002-10-22

    申请号:US09712857

    申请日:2000-11-15

    Applicant: Tadao Inoue

    Inventor: Tadao Inoue

    CPC classification number: H05B33/0818 H05B33/0803 Y02B20/347

    Abstract: A light emitting element driving circuit for high speed modulation includes an electric current source for generating a constant electric current for driving a light emitting element and an electric current switch for switching a portion of a path for an electric current flowing into the electric current source to one of a path including the light emitting element and another path excluding the light emitting element, in accordance with a data signal. The driving circuit further includes a capacitor that is charged by the application of a supply voltage to thereby boost the supply voltage, and a boost switching part. The boost switching part switches another portion of the path for an electric current flowing into the electric current source to one of a path for charging the capacitor and another path for applying the supply voltage boosted by the capacitor to the light emitting element, in accordance with a control signal corresponding to the data signal.

    Abstract translation: 用于高速调制的发光元件驱动电路包括用于产生用于驱动发光元件的恒定电流的电流源和用于切换流入电流源的电流的路径的一部分的电流开关, 根据数据信号,包括发光元件的路径和除了发光元件之外的另一路径之一。 驱动电路还包括通过施加电源电压来充电从而提高电源电压的电容器和升压切换部件。 升压切换部分将用于流入电流源的电流的路径的另一部分切换到用于对电容器充电的路径中的一个,另一路径用于将由电容器升压的电源电压施加到发光元件,根据 对应于数据信号的控制信号。

    Light receiving device and light receiving method
    26.
    发明授权
    Light receiving device and light receiving method 有权
    光接收装置及光接收方式

    公开(公告)号:US08515291B2

    公开(公告)日:2013-08-20

    申请号:US12540855

    申请日:2009-08-13

    Applicant: Tadao Inoue

    Inventor: Tadao Inoue

    CPC classification number: H01L27/1446 H01L27/14625 H01L27/14627

    Abstract: The light receiving device includes a pixel array, such as a two-dimensional pixel array, of pixels each having a light-receiving element for receiving input signal light, an output selecting unit for selecting the outputs of pixels within the pixel array, a selected output adding unit for adding and outputting the selected outputs of the pixels, and an amplifying unit for amplifying the output of the selected output adding unit.

    Abstract translation: 光接收装置包括每个具有用于接收输入信号光的光接收元件的像素的二维像素阵列的像素阵列,用于选择像素阵列内的像素的输出的输出选择单元,所选择的 输出加法单元,用于相加和输出所选择的像素的输出;以及放大单元,用于放大所选输出加法单元的输出。

    Imaging device
    27.
    发明授权
    Imaging device 有权
    成像设备

    公开(公告)号:US08110860B2

    公开(公告)日:2012-02-07

    申请号:US13104673

    申请日:2011-05-10

    Abstract: First diffusion region constituting a photodiode in each pixel stores carriers generated according to incident light. Second diffusion region is formed at a surface of the first diffusion region to cover a peripheral part of the first diffusion region. In the peripheral part of the first diffusion region, crystal defects tend to occur by a process of forming an isolation region and a gate electrode, so that dark current noise tends to occur. The second diffusion region functioning as a protection layer prevents crystal defects in a manufacturing process. The second diffusion region isn't formed on a center of the surface of the first diffusion region where crystal defects don't tend to occur. In the first diffusion region where the second diffusion region isn't formed, the thickness of a depletion layer increases, which improves light detection sensitivity. This improves detection sensitivity of the photodiode without increasing the dark current noise.

    Abstract translation: 在每个像素中构成光电二极管的第一扩散区域存储根据入射光生成的载流子。 第二扩散区域形成在第一扩散区域的表面以覆盖第一扩散区域的周边部分。 在第一扩散区域的外围部分中,通过形成隔离区域和栅极电极的过程倾向于发生晶体缺陷,从而趋于产生暗电流噪声。 用作保护层的第二扩散区防止制造过程中的晶体缺陷。 第二扩散区域不形成在不易发生结晶缺陷的第一扩散区域的表面的中心。 在没有形成第二扩散区域的第一扩散区域中,耗尽层的厚度增加,这提高了光检测灵敏度。 这可以提高光电二极管的检测灵敏度,而不会增加暗电流噪声。

    Solid state image sensing device
    28.
    发明授权
    Solid state image sensing device 有权
    固态摄像装置

    公开(公告)号:US08030692B2

    公开(公告)日:2011-10-04

    申请号:US12130280

    申请日:2008-05-30

    Abstract: A solid state image sensing device in which many pixels are disposed in a matrix on a two-dimensional plane comprises a plurality of light receiving devices disposed in such a way that a center interval may periodically change in a column direction and/or a row direction, and a plurality of micro-lenses, for collecting an incident light of each light receiving device, wherein a center interval periodically changes in accordance with the periodic change of the center interval of the light receiving device.

    Abstract translation: 其中许多像素被布置在二维平面上的矩阵中的固态图像感测装置包括多个光接收装置,其以这样的方式设置,使得中心间隔可以在列方向和/或行方向上周期性地变化 以及多个微透镜,用于收集每个光接收装置的入射光,其中中心间隔根据光接收装置的中心间隔的周期性变化周期性地变化。

    Solid-state image pickup apparatus including a global shutter function and control method therefor
    29.
    发明授权
    Solid-state image pickup apparatus including a global shutter function and control method therefor 有权
    包括全局快门功能的固态图像拾取装置及其控制方法

    公开(公告)号:US07777796B2

    公开(公告)日:2010-08-17

    申请号:US11545692

    申请日:2006-10-11

    Abstract: A solid-state image pickup apparatus includes a pixel unit consisting of a plurality of pixels; a pixel control unit for controlling the plurality of pixels; a readout unit for reading a signal of each pixel output from the pixel unit; a shutter unit for establishing a state of a light incident to the pixel unit and that of shielding the pixel unit from the light; and a control unit. The control units includes an exposure mode changeover unit for changing over an exposure mode to either a first exposure mode performing a simultaneous exposure for all pixels or a second exposure mode performing an exposure for each of a predetermined unit of pixels. The control unit controls the pixel control unit, readout unit and shutter unit according to an exposure mode changed over by the exposure mode changeover unit.

    Abstract translation: 固态图像拾取装置包括由多个像素组成的像素单元; 用于控制所述多个像素的像素控制单元; 读取单元,用于读取从像素单元输出的每个像素的信号; 快门单元,用于建立入射到像素单元的光的状态以及屏蔽像素单元与光的状态; 和控制单元。 控制单元包括曝光模式转换单元,用于将曝光模式转换为针对所有像素执行同时曝光的第一曝光模式或对于每个像素的预定单位执行曝光的第二曝光模式。 控制单元根据曝光模式转换单元改变的曝光模式来控制像素控制单元,读出单元和快门单元。

    Image sensor with embedded photodiode region and manufacturing method for same
    30.
    发明授权
    Image sensor with embedded photodiode region and manufacturing method for same 有权
    具有嵌入式光电二极管区域的图像传感器及其制造方法

    公开(公告)号:US07745860B2

    公开(公告)日:2010-06-29

    申请号:US11852663

    申请日:2007-09-10

    Abstract: A CMOS image sensor with an effectively increased aperture ratio and moreover with improved optical sensitivity, and a method of manufacture of such a CMOS image sensor is provided a first aspect of the invention is an image sensor, has a pixel region 10 in which are formed a plurality of pixels each having at least a photodiode, a reset transistor, and a source-follower transistor; and a peripheral circuit region 12 in which are formed peripheral circuits which process read-out signals read out from the pixel region, a well region PW2 in the pixel region PW1 is formed to be more shallow than a well region in the peripheral circuit region. Also, reset transistors or source-follower transistors are formed in the shallow well region PW2 of the pixel region 10, and a photodiode region PHD2 is embedded below the transistor well region PW2.

    Abstract translation: 提供了一种具有有效提高孔径比并且还具有改善的光学灵敏度的CMOS图像传感器以及这种CMOS图像传感器的制造方法本发明的第一方面是一种图像传感器,其具有形成有像素区域10 每个具有至少一个光电二极管,复位晶体管和源极 - 跟随器晶体管的多个像素; 以及外围电路区域12,其形成有处理从像素区域读出的读出信号的外围电路,像素区域PW1中的阱区域PW2形成为比周边电路区域中的阱区域浅。 此外,在像素区域10的浅阱区PW2中形成复位晶体管或源极跟随器晶体管,并且将光电二极管区域PHD2嵌入在晶体管阱区PW2的下方。

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