Abstract:
An image sensor in which a plurality of pixels having at least a photodiode, a reset transistor, and source follower transistor are formed, wherein each pixel comprises an electrical-charge transfer gate transistor between the photodiode and reset transistor, and a floating diffusion region constituting a node connecting the reset transistor and transfer gate transistor is connected to the gate of the source follower transistor. Further, a photodiode region is embedded below a well region in which the reset transistor and source follower transistor of each pixel are formed. In addition, the photodiode region is not formed below at least a partial region of the floating diffusion region.
Abstract:
The present invention can be applied to a CMOS image sensor in which each pixel circuit of an active pixel sensor array includes a photoelectric conversion element for converting input light into electricity and a switch transistor for controlling the supply of a reset voltage for resetting the photoelectric conversion element to a predetermined voltage, to the photoelectric conversion element. The CMOS image sensor comprises a control circuit for assigning a control signal applied to a control electrode of the switch transistor. The control circuit outputs a first voltage much higher than a supply voltage of the CMOS image sensor so as to make an ON resistance of the switch transistor sufficiently small in the first part of a reset period of the photoelectric conversion element and outputs a second voltage lower than a supply voltage of the CMOS image sensor in the latter part of a reset period of the photoelectric conversion element.
Abstract:
A light output control circuit to update light output synchronously with input data in burst signal transmission system is disclosed. The circuit has a function of issuing light deterioration warning unerringly, which includes: a monitoring portion to detect light output emitted from a light emission element driven in accordance with transmission data; a level comparator to compare a monitoring signal outputted from the monitoring portion with a reference signal; a data detection portion to detect the existence of the transmission data; and an output controller to determine whether a light output deterioration warning is to be issued using an output signal of the data detection portion and an output signal of the level comparator.
Abstract:
An optical transmitter circuit including a light receiving element, such as a photodiode, which monitors the optical output of a light emitting element such as a semiconductor laser. A current-voltage converting circuit supplies a drive current from a drive circuit to the light emitting element and converts the output voltage of the light receiving element into voltage. An APC amplifier compares the converted output signals and a reference signal, and a hold circuit holds the output signal of the APC amplifier and uses the output signal as a current control signal of the drive circuit. A “1” continuous signal detecting circuit detects the continuation of “1” in a specified number of bits in the input data (DATA) and updates the hold value in the hold circuit.
Abstract:
A light emitting element driving circuit for high speed modulation includes an electric current source for generating a constant electric current for driving a light emitting element and an electric current switch for switching a portion of a path for an electric current flowing into the electric current source to one of a path including the light emitting element and another path excluding the light emitting element, in accordance with a data signal. The driving circuit further includes a capacitor that is charged by the application of a supply voltage to thereby boost the supply voltage, and a boost switching part. The boost switching part switches another portion of the path for an electric current flowing into the electric current source to one of a path for charging the capacitor and another path for applying the supply voltage boosted by the capacitor to the light emitting element, in accordance with a control signal corresponding to the data signal.
Abstract:
The light receiving device includes a pixel array, such as a two-dimensional pixel array, of pixels each having a light-receiving element for receiving input signal light, an output selecting unit for selecting the outputs of pixels within the pixel array, a selected output adding unit for adding and outputting the selected outputs of the pixels, and an amplifying unit for amplifying the output of the selected output adding unit.
Abstract:
First diffusion region constituting a photodiode in each pixel stores carriers generated according to incident light. Second diffusion region is formed at a surface of the first diffusion region to cover a peripheral part of the first diffusion region. In the peripheral part of the first diffusion region, crystal defects tend to occur by a process of forming an isolation region and a gate electrode, so that dark current noise tends to occur. The second diffusion region functioning as a protection layer prevents crystal defects in a manufacturing process. The second diffusion region isn't formed on a center of the surface of the first diffusion region where crystal defects don't tend to occur. In the first diffusion region where the second diffusion region isn't formed, the thickness of a depletion layer increases, which improves light detection sensitivity. This improves detection sensitivity of the photodiode without increasing the dark current noise.
Abstract:
A solid state image sensing device in which many pixels are disposed in a matrix on a two-dimensional plane comprises a plurality of light receiving devices disposed in such a way that a center interval may periodically change in a column direction and/or a row direction, and a plurality of micro-lenses, for collecting an incident light of each light receiving device, wherein a center interval periodically changes in accordance with the periodic change of the center interval of the light receiving device.
Abstract:
A solid-state image pickup apparatus includes a pixel unit consisting of a plurality of pixels; a pixel control unit for controlling the plurality of pixels; a readout unit for reading a signal of each pixel output from the pixel unit; a shutter unit for establishing a state of a light incident to the pixel unit and that of shielding the pixel unit from the light; and a control unit. The control units includes an exposure mode changeover unit for changing over an exposure mode to either a first exposure mode performing a simultaneous exposure for all pixels or a second exposure mode performing an exposure for each of a predetermined unit of pixels. The control unit controls the pixel control unit, readout unit and shutter unit according to an exposure mode changed over by the exposure mode changeover unit.
Abstract:
A CMOS image sensor with an effectively increased aperture ratio and moreover with improved optical sensitivity, and a method of manufacture of such a CMOS image sensor is provided a first aspect of the invention is an image sensor, has a pixel region 10 in which are formed a plurality of pixels each having at least a photodiode, a reset transistor, and a source-follower transistor; and a peripheral circuit region 12 in which are formed peripheral circuits which process read-out signals read out from the pixel region, a well region PW2 in the pixel region PW1 is formed to be more shallow than a well region in the peripheral circuit region. Also, reset transistors or source-follower transistors are formed in the shallow well region PW2 of the pixel region 10, and a photodiode region PHD2 is embedded below the transistor well region PW2.