公开(公告)号：US20060118840A1

公开(公告)日：2006-06-08

申请号：US11002383

申请日：2004-12-02

Applicant: Santhiagu Ezhilvalavan ,  Victor Samper

Inventor： Santhiagu Ezhilvalavan ,  Victor Samper

IPC: H01L29/84 ,  H01L21/00

CPC classification number: H01G7/06 ,  H01L28/56 ,  H01L41/0815 ,  H01L41/1876 ,  H01L41/318 ,  H01L41/319

Abstract: An electrically stable PbLa0.5TiO3/PbZr0.52Ti0.48O3 (PLT/PZT) ferroelectric structure may fabricated using precursor solutions formed using a simple sol-gel process. The PLT/PZT ferroelectric structure may be extended to a PLT/PZT/PLT ferroelectric capacitor structure. In terms of device application, better ferroelectric properties with reliable fatigue characteristics are desirable to render satisfactory performance and long device life. The PLT/PZT/PLT ferroelectric capacitor structure excels over previous hybrid structures by providing a larger remnant polarization, higher saturation polarization, lower coercive field and leakage current density and higher resistance to fatigue. The fabrication method involving the use of a PLT seeding layer acts to lower the fabrication temperature of the subsequent PZT layer and allows for a simpler sequence of processing steps that may be seen to substantially reduce manufacturing costs.

Abstract translation: 电化学稳定的PbLa 0.53Ti 3/3 PbZr 0.52 Ti 0.48 O 3（（ PLT / PZT）铁电结构可以使用使用简单溶胶 - 凝胶法形成的前体溶液来制造。 PLT / PZT铁电体结构可以扩展到PLT / PZT / PLT铁电电容器结构。 在器件应用方面，具有可靠疲劳特性的更好的铁电性能是期望的，以使得令人满意的性能和长的器件寿命。 PLT / PZT / PLT铁电电容器结构通过提供更大的残余极化，更高的饱和极化，更低的矫顽场和漏电流密度以及更高的抗疲劳性，优于先前的混合结构。 涉及使用PLT晶种层的制造方法起到降低后续PZT层的制造温度的作用，并且允许可以看到的更简单的处理步骤顺序，从而大大降低制造成本。