-
公开(公告)号:US20230172069A1
公开(公告)日:2023-06-01
申请号:US17990904
申请日:2022-11-21
发明人: Akio KONISHI , Hiroaki KANAMORI
IPC分类号: H01L41/08 , H01L41/187 , H01L41/316 , H01L41/319 , C30B29/68 , C30B23/02 , C30B29/32 , C30B29/02
CPC分类号: H01L41/0815 , H01L41/187 , H01L41/1873 , H01L41/1876 , H01L41/316 , H01L41/319 , C30B29/68 , C30B23/025 , C30B29/32 , C30B29/02
摘要: A film structure comprises a substrate and a buffer film formed on the substrate. The substrate is a 36° to 48° rotated Y-cut Si substrate, or the substrate is a SOI substrate including a base substance made of the 36° to 48° rotated Y-cut Si substrate, an insulating layer on the base substance, and a SOI layer made of a Si film on the insulating layer, and a mirror index of a crystal plane of an upper surface of the SOI layer is equal to a mirror index of a crystal plane of an upper surface of the base substance. The buffer film includes ZrO2 epitaxially grown on the substrate.
-
2.
公开(公告)号:US20190028081A1
公开(公告)日:2019-01-24
申请号:US16126840
申请日:2018-09-10
申请人: IQE plc
发明人: Rodney Pelzel , Rytis Dargis , Andrew Clark , Howard Williams , Patrick Chin , Michael Lebby
IPC分类号: H03H1/00 , H01L41/319 , H01L27/06 , H01L29/66 , H03H9/17 , H03H3/08 , H03H3/02 , H01L23/66 , H01L41/083 , H01L41/08 , H01L29/778 , H01L29/737
CPC分类号: H03H1/0007 , H01L23/66 , H01L27/0688 , H01L29/66242 , H01L29/66431 , H01L29/737 , H01L29/778 , H01L41/0815 , H01L41/083 , H01L41/319 , H01L2223/6672 , H03H3/02 , H03H3/08 , H03H9/175 , H03H2001/0064 , H03H2001/0085 , H03H2003/025
摘要: Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure can include an epitaxial crystalline rare earth oxide (REO) layer over a substrate, a first epitaxial electrode layer over the crystalline REO layer, and an epitaxial piezoelectric layer over the first epitaxial electrode layer. The layer structure can further include a second electrode layer over the epitaxial piezoelectric layer. The first electrode layer can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).
-
公开(公告)号:US20180248108A1
公开(公告)日:2018-08-30
申请号:US15755195
申请日:2016-08-26
申请人: CeramTec GmbH
发明人: Hans-Jürgen SCHREINER , Tanja EINHELLINGER-MÜLLER , Tobias SCHMIDT , Ralf MOOS , Michael SCHUBERT
IPC分类号: H01L41/319 , H01L41/08 , H01L41/187 , C01G25/00 , C23C24/04 , C23C28/00
CPC分类号: H01L41/319 , C01G25/006 , C01P2006/40 , C23C24/04 , C23C28/32 , C23C28/345 , H01L41/0815 , H01L41/1876 , H01L41/314
摘要: The invention relates to a layer having piezoelectric properties and a method for producing a layer having piezoelectric properties, in particular by means of aerosol deposition method (ADM).
-
公开(公告)号:US20180226560A1
公开(公告)日:2018-08-09
申请号:US15887394
申请日:2018-02-02
IPC分类号: H01L41/047 , B41J2/045
CPC分类号: H01L41/047 , B41J2/04581 , B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1635 , B41J2/1642 , B41J2/1645 , B41J2/1646 , B41J2002/14241 , B41J2002/14419 , H01L41/0815 , H01L41/0973 , H01L41/317
摘要: A piezoelectric element having a vibrating section including a vibrating plate, a first electrode, a piezoelectric layer, and a second electrode, in which a crystal orientation of a piezoelectric material forming the piezoelectric layer is (100) and a crystal structure of the piezoelectric material is a tetragonal crystal, and a total thickness T1 of the vibrating plate and the first electrode and a total thickness T2 of the piezoelectric layer and the second electrode have a relationship of T1≥T2.
-
公开(公告)号:US10003007B2
公开(公告)日:2018-06-19
申请号:US15227324
申请日:2016-08-03
发明人: Tomohiro Sakai
IPC分类号: H01L41/08 , B41J2/14 , H01L41/047 , H01L41/187 , H01L41/27 , H01L41/297 , H01L41/09 , H01L41/29 , H01L41/318
CPC分类号: H01L41/0805 , B41J2/14201 , B41J2/14233 , B41J2002/14241 , B41J2002/1425 , B41J2202/03 , H01L41/0477 , H01L41/0478 , H01L41/0815 , H01L41/0973 , H01L41/1878 , H01L41/27 , H01L41/29 , H01L41/297 , H01L41/318
摘要: A piezoelectric element includes a first electrode, a piezoelectric layer which is provided on the first electrode and which is formed of crystals of a composite oxide with a perovskite structure which is preferentially oriented in a plane, and a second electrode which is provided on the piezoelectric layer and which is formed of platinum which is preferentially oriented in a plane, in which, in the piezoelectric layer, plane intervals L1 of the crystals on the first electrode side are larger than plane intervals L2 of the crystals on the second electrode side.
-
公开(公告)号:US09972769B2
公开(公告)日:2018-05-15
申请号:US14732988
申请日:2015-06-08
申请人: Murata Manufacturing Co., Ltd. , NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
发明人: Keiichi Umeda , Atsushi Honda , Morito Akiyama , Toshimi Nagase , Keiko Nishikubo , Masato Uehara
IPC分类号: H01L41/187 , H01L41/316 , H01L41/08 , C23C14/06 , C23C14/34 , H03H3/02 , H03H9/02
CPC分类号: H01L41/316 , C23C14/0641 , C23C14/3464 , H01L41/0815 , H01L41/187 , H03H3/02 , H03H9/02031
摘要: A piezoelectric thin film comprising aluminum nitride containing magnesium and hafnium, wherein a content of the hafnium based on 100 atomic % of the magnesium is 8 atomic % or more and less than 100 atomic %, and a total content of the magnesium and hafnium based on a sum of a content of the magnesium, hafnium, and aluminum is in a range of 47 atomic % or less.
-
7.
公开(公告)号:US09889652B2
公开(公告)日:2018-02-13
申请号:US15032449
申请日:2014-10-10
申请人: Konica Minolta, Inc.
发明人: Kazuki Shibuya
IPC分类号: B41J2/14 , H01L41/31 , H01L41/29 , B41J2/16 , H01L41/047 , H01L41/08 , H01L41/09 , H01L41/319 , H01L41/187 , H01L41/314
CPC分类号: B41J2/14209 , B41J2/14233 , B41J2/1607 , B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1645 , B41J2/1646 , H01L41/0477 , H01L41/0815 , H01L41/0973 , H01L41/1876 , H01L41/29 , H01L41/31 , H01L41/314 , H01L41/319
摘要: An actuator as a piezoelectric device has a bonding layer including titanium, a lower electrode including platinum, a piezoelectric thin film, and an upper electrode formed in this order on a substrate. Ti particles precipitate from the bonding layer onto the lower electrode. Pt that forms the lower electrode has a crystal grain size of 75 nm to 150 nm.
-
公开(公告)号:US20170373242A1
公开(公告)日:2017-12-28
申请号:US15628816
申请日:2017-06-21
发明人: Daisuke YAMADA , Eiju HIRAI , Akio KONISHI
IPC分类号: H01L41/08 , H01L41/187 , H01L41/083 , H02N2/02 , H01L41/297 , G11B21/16 , H02N2/00
CPC分类号: H01L41/0815 , G11B21/16 , H01L41/083 , H01L41/1876 , H01L41/297 , H02N2/002 , H02N2/0025 , H02N2/026
摘要: In a MEMS device in which a first electrode layer, a piezoelectric layer, and a second electrode layer are stacked in this order from a first surface side of a substrate, a first wiring layer is stacked on a second surface on a side opposite to a first surface of the substrate and the first electrode layer and the first wiring layer are connected to each other via a through wiring passing through the substrate.
-
公开(公告)号:US09853203B2
公开(公告)日:2017-12-26
申请号:US14419378
申请日:2013-07-25
申请人: KONICA MINOLTA, INC.
发明人: Shinya Matsuda
IPC分类号: H01L41/18 , H01L41/08 , H01L41/09 , H01L41/319 , H01L41/187 , B41J2/14 , H01L41/053 , H01L41/316
CPC分类号: H01L41/18 , B41J2/14201 , B41J2/14233 , B41J2202/03 , H01L41/053 , H01L41/0815 , H01L41/0973 , H01L41/1875 , H01L41/1876 , H01L41/316 , H01L41/319
摘要: A piezoelectric element includes, on a base, an underlying layer for controlling crystallinity of a piezoelectric layer, and the piezoelectric layer. The piezoelectric layer includes a crystal with an ABO3-type structure having at least Pb at A sites. In the underlying layer, an interface-with-the-base side is configured including at least Pb and another substance with a different composition rate from that of the piezoelectric layer at the A sites, and a substance with a different composition ratio from that of the piezoelectric layer at B sites. In a layer above the interface-with-the-base side in the underlying layer, the composition rate of the other substance included at the A sites of the underlying layer progressively changes and also the composition ratio of the substance included at the B sites progressively changes, from the interface-with-the-base side toward the interface-with-the-piezoelectric-layer side to approach the composition of the piezoelectric layer.
-
公开(公告)号:US20170345993A1
公开(公告)日:2017-11-30
申请号:US15599474
申请日:2017-05-19
发明人: KENICHI KIKUCHI
IPC分类号: H01L41/09 , H01L41/18 , H01L41/08 , H01L41/313 , H01L41/047
CPC分类号: H01L41/0913 , H01L41/0477 , H01L41/0815 , H01L41/18 , H01L41/313 , H03H9/0509 , H03H9/0533 , H03H9/1021 , H03H9/17
摘要: A piezoelectric device includes a piezoelectric vibrating piece, a base, a wire, a conductive adhesive, and a buffer layer. The piezoelectric vibrating piece includes excitation electrodes and extraction electrodes at both principal surfaces. The base includes the piezoelectric vibrating piece and a first wiring electrode and a second wiring electrode connected to the extraction electrodes. The wire connects the extraction electrode on a surface opposite to a side of the base among the extraction electrodes to one wiring electrode of the first wiring electrode and the second wiring electrode. The conductive adhesive connects the extraction electrode at the base side among the extraction electrodes to the other wiring electrode among the first wiring electrode and the second wiring electrode. The buffer layer reduces stress of the wire between the extraction electrode to which the wire is connected and the piezoelectric vibrating piece.
-
-
-
-
-
-
-
-
-