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公开(公告)号:US10074798B2
公开(公告)日:2018-09-11
申请号:US14560902
申请日:2014-12-04
发明人: Won-Hee Lee , Jin-Ho Gu , Jae-Yk Kim
IPC分类号: H01L41/314 , H01L41/18 , H01L41/047 , H01L41/332 , H01L41/319 , H01L41/317 , H01L41/37 , B06B1/06
CPC分类号: H01L41/314 , B06B1/0622 , B06B1/0629 , B06B1/064 , H01L41/0471 , H01L41/183 , H01L41/317 , H01L41/319 , H01L41/332 , H01L41/37 , Y10T29/42 , Y10T156/11
摘要: Provided is a method of manufacturing an ultrasonic probe. The method includes forming a sacrificial layer on a substrate; forming a plurality of openings in the sacrificial layer that are separated from one another; forming piezoelectric units by growing a piezoelectric element in each of the plurality of openings; and removing the sacrificial layer.
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公开(公告)号:US09882116B2
公开(公告)日:2018-01-30
申请号:US15144585
申请日:2016-05-02
IPC分类号: H01L29/15 , H01L41/08 , H01L41/319 , H03H9/02 , H01L29/16 , H01L29/66 , H01L29/84 , H01L41/187 , H01L41/316 , H01L21/02 , H01L41/253
CPC分类号: H01L41/0815 , H01L21/02521 , H01L29/1602 , H01L29/66015 , H01L29/84 , H01L41/1876 , H01L41/253 , H01L41/316 , H01L41/319 , H03H9/02582
摘要: Methods for fabricating a piezoelectric device are provided. The methods can include providing a substrate and forming a nanocrystalline diamond layer on a first surface of the substrate. The methods can also include depositing a piezoelectric layer on a first surface of the nanocrystalline diamond layer.
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公开(公告)号:US09868281B2
公开(公告)日:2018-01-16
申请号:US15585569
申请日:2017-05-03
申请人: ROHM CO., LTD.
发明人: Takaya Nagahata
IPC分类号: B41J2/14 , B41J2/045 , B41J2/175 , H01L41/047 , H01L41/053 , H01L41/08 , H01L41/083 , H01L41/09 , H01L41/187 , B41J2/16
CPC分类号: B41J2/04581 , B41J2/04541 , B41J2/14032 , B41J2/1404 , B41J2/14233 , B41J2/161 , B41J2/1645 , B41J2/1646 , B41J2/17596 , B41J2002/14241 , B41J2002/14306 , B41J2002/14491 , B41J2202/03 , B41J2202/05 , B41J2202/07 , B41J2202/13 , B41J2202/22 , H01L41/0472 , H01L41/0475 , H01L41/0533 , H01L41/0815 , H01L41/083 , H01L41/0973 , H01L41/187 , H01L41/1876 , H01L41/27 , H01L41/318 , H01L41/319 , H01L41/33
摘要: An inkjet head includes a substrate that defines a cavity in which ink is stored, a vibrating membrane that is supported by the substrate and that defines the cavity, and a piezoelectric device that is disposed on the vibrating membrane and that changes a volume of the cavity by displacing the vibrating membrane. A driving IC is mounted on the actuator substrate and drives the piezoelectric device.
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公开(公告)号:US09821342B2
公开(公告)日:2017-11-21
申请号:US14582304
申请日:2014-12-24
发明人: Chikara Kojima , Koji Ohashi , Yoshinao Miyata
IPC分类号: H01L41/08 , B06B1/06 , H01L27/18 , H01L41/09 , H01L41/113 , H01L41/319 , H01L41/332 , G01S15/89
CPC分类号: B06B1/0629 , G01S15/8915 , H01L27/18 , H01L41/0815 , H01L41/0973 , H01L41/1132 , H01L41/319 , H01L41/332
摘要: Provided is an ultrasonic sensor including a piezoelectric elements arranged along a first direction and a second direction on a vibration plate, an insulation layer, and conductive lines. Each piezoelectric element including a first electrode, a piezoelectric layer, and a second electrode. The first electrode is partially removed in a regions between the piezoelectric elements. The second electrode is a separate electrode provided for each piezoelectric element. The insulation layer covers the second electrodes and has holes through which portions at opposite ends of the second electrodes along the first direction are partially exposed. Each conductive line is provided between adjacent ones of the second electrodes along the first direction and electrically connects, via the holes, the adjacent ones of the second electrodes.
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公开(公告)号:US09799821B2
公开(公告)日:2017-10-24
申请号:US14890518
申请日:2014-05-01
发明人: Toshihiro Doi , Hideaki Sakurai , Nobuyuki Soyama
IPC分类号: B32B3/00 , H01L41/187 , C23C18/12 , H01L49/02 , H01L41/318 , H01L41/319 , H01L21/02 , H01L27/108 , H01L27/11507 , H01L29/51 , H01L37/02 , H01L41/08
CPC分类号: H01L41/1876 , C23C18/1216 , C23C18/1254 , H01L21/02197 , H01L21/02282 , H01L27/10805 , H01L27/11507 , H01L28/55 , H01L29/516 , H01L29/517 , H01L37/025 , H01L41/0815 , H01L41/318 , H01L41/319
摘要: A residual stress in a PZT type ferroelectric film 12 formed on a substrate body 11 by a sol-gel process is −14 MPa to −31 MPa, and the ferroelectric film 12 is crystal oriented in a (100) plane.
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公开(公告)号:US20170158571A1
公开(公告)日:2017-06-08
申请号:US15325592
申请日:2015-04-27
申请人: YOUTEC CO., LTD.
发明人: Takeshi KIJIMA
IPC分类号: C04B41/50 , C04B35/472 , C04B35/622 , H01L41/39 , C04B41/87 , H01L41/047 , H01L41/187 , C04B35/491 , C04B41/00
CPC分类号: C04B41/5041 , B32B18/00 , C04B35/472 , C04B35/491 , C04B35/62218 , C04B41/009 , C04B41/87 , C04B2235/3234 , C04B2235/3249 , C04B2235/3296 , C04B2235/768 , C04B2237/34 , C04B2237/346 , C04B2237/348 , C04B2237/704 , C23C14/088 , H01L41/0478 , H01L41/0815 , H01L41/1876 , H01L41/316 , H01L41/318 , H01L41/319 , H01L41/39
摘要: To improve a piezoelectric property. One aspect of the present invention is ferroelectric ceramics including: a Pb(Zr1-ATiA)O3 film; and a Pb(Zr1-xTix)O3 film formed on the Pb(Zr1-ATiA)O3 film; wherein the A and x satisfy the following Formulae 1 to 3: 0≦A≦0.1 Formula 1 0.1
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7.
公开(公告)号:US20170141750A1
公开(公告)日:2017-05-18
申请号:US15342045
申请日:2016-11-02
申请人: IQE, PLC
发明人: Rodney Pelzel , Rytis Dargis , Andrew Clark , Howard Williams , Patrick Chin , Michael Lebby
IPC分类号: H03H1/00 , H01L27/06 , H01L29/737 , H01L29/66 , H01L23/66 , H01L29/778
CPC分类号: H03H1/0007 , H01L23/66 , H01L27/0688 , H01L29/66242 , H01L29/66431 , H01L29/737 , H01L29/778 , H01L41/0815 , H01L41/083 , H01L41/319 , H01L2223/6672 , H03H3/02 , H03H3/08 , H03H9/175 , H03H2001/0064 , H03H2001/0085 , H03H2003/025
摘要: Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure can include an epitaxial crystalline rare earth oxide (REO) layer over a substrate, a first epitaxial electrode layer over the crystalline REO layer, and an epitaxial piezoelectric layer over the first epitaxial electrode layer. The layer structure can further include a second electrode layer over the epitaxial piezoelectric layer. The first electrode layer can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).
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8.
公开(公告)号:US20170119349A1
公开(公告)日:2017-05-04
申请号:US15332381
申请日:2016-10-24
发明人: Hiromu MIYAZAWA , Hiroshi ITO , Tomoaki NAKAMURA , Masayoshi YAMADA , Sayaka YAMASAKI , Tsukasa FUNASAKA
IPC分类号: A61B8/00 , H01L41/08 , H01L41/113 , G01S7/52 , H01L41/29 , H01L41/27 , B06B1/06 , G01S15/89 , H01L41/047 , H01L41/187
CPC分类号: A61B8/4494 , A61B8/4472 , A61B8/54 , B06B1/0622 , G01S7/5208 , G01S7/52082 , G01S15/8913 , G01S15/8925 , H01L27/20 , H01L41/047 , H01L41/081 , H01L41/0815 , H01L41/0973 , H01L41/1132 , H01L41/1876 , H01L41/27 , H01L41/29 , H01L41/318 , H01L41/319 , H01L41/332
摘要: A receiving transducer includes: a flexible portion; a piezoelectric film provided on the flexible portion; a first electrode provided between a first surface of the flexible portion, on which the piezoelectric body is provided, and a second surface of the piezoelectric film that is a surface not facing the flexible portion; and a second electrode that is provided between the first and second surfaces and that faces the first electrode with a gap interposed therebetween in plan view as viewed from the thickness direction of the flexible portion.
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公开(公告)号:US20170092841A1
公开(公告)日:2017-03-30
申请号:US15275935
申请日:2016-09-26
IPC分类号: H01L41/27 , H01L41/08 , H01L41/297 , B05D3/00 , C23C30/00 , B05C11/00 , B05C9/02 , H01L41/047 , H01L41/317
CPC分类号: B05D3/007 , B05C9/02 , B05C11/00 , B41J2/14233 , B41J2202/03 , B41J2202/11 , C23C30/005 , H01L41/0477 , H01L41/0815 , H01L41/0973 , H01L41/29 , H01L41/317 , H01L41/319
摘要: A substrate for piezoelectric body formation has a base substrate layer containing at least SiO2 or SiN in the surface, an intermediate layer containing at least one of Ti and TiO2 on the base substrate layer, and an electrode layer containing Pt on the intermediate layer, in which the film thickness of the electrode layer is 40 nm or more and 1000 nm or less and Ti is not detected in the surface of the electrode layer by an elemental quantitative analysis method.
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10.
公开(公告)号:US20170018702A1
公开(公告)日:2017-01-19
申请号:US15123858
申请日:2015-03-03
申请人: ULVAC, INC.
发明人: Hiroki KOBAYASHI , Mitsunori HENMI , Mitsutaka HIROSE , Kazuya TSUKAGOSHI , Isao KIMURA , Koukou SUU
IPC分类号: H01L41/319 , H01L41/316 , C23C14/34 , H01L41/187
CPC分类号: H01L41/319 , C23C14/083 , C23C14/088 , C23C14/185 , C23C14/34 , C23C14/35 , H01L21/02197 , H01L21/02266 , H01L41/1876 , H01L41/316
摘要: A method of manufacturing a multi-layered film includes: forming an electroconductive layer on a substrate; forming a seed layer including an oxidative product having a perovskite structure so as to coat the electroconductive layer by a sputtering method; and forming a dielectric layer so as to coat the seed layer.
摘要翻译: 制造多层膜的方法包括:在基板上形成导电层; 形成包含具有钙钛矿结构的氧化产物的种子层,以便通过溅射法涂覆导电层; 并形成电介质层以覆盖种子层。
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