公开(公告)号：US10141189B2

公开(公告)日：2018-11-27

申请号：US15394571

申请日：2016-12-29

Applicant: ASM IP Holding B.V.

Inventor： Harald Profijt ,  Qi Xie ,  Jan Willem Maes ,  David Kohen

IPC: H01L21/225 ,  H01L29/66 ,  H01L29/161 ,  H01L29/10 ,  H01L29/06 ,  H01L21/223 ,  H01L21/768 ,  H01L21/385

Abstract: In some embodiments, a compound semiconductor is formed by diffusion of semiconductor species from a source semiconductor layer into semiconductor material in a substrate. The source semiconductor layer may be an amorphous or polycrystalline structure, and provides a source of semiconductor species for later diffusion into the other semiconductor material. Advantageously, such a semiconductor layer may be more conformal than an epitaxially grown, crystalline semiconductor layer. As a result, this more conformal semiconductor layer acts as a uniform source of the semiconductor species for diffusion into the semiconductor material in the substrate. In some embodiments, an interlayer is formed between the source semiconductor layer and the substrate, and then the interlayer is trimmed before depositing the source semiconductor layer. In some other embodiments, the source semiconductor layer is deposited directly on the substrate, and has an amorphous or polycrystalline structure.