公开(公告)号：US10923344B2

公开(公告)日：2021-02-16

申请号：US15798201

申请日：2017-10-30

Applicant: ASM IP Holding B.V.

Inventor： David Kohen ,  Harald Benjamin Profijt ,  Andrew Kretzschmar

IPC: H01L21/02 ,  H01L29/165 ,  H01L27/11582 ,  H01L29/10

Abstract: A method for forming a forming a semiconductor structure is disclosed. The method may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon germanium (Si1-xGex) seed layer directly on the silicon oxide layer, and depositing a germanium (Ge) layer directly on the silicon germanium (Si1-xGex) seed layer. Semiconductor structures including a germanium (Ge) layer deposited on silicon oxide utilizing an intermediate silicon germanium (Si1-xGex) seed layer are also disclosed.

公开(公告)号：US10535516B2

公开(公告)日：2020-01-14

申请号：US15886225

申请日：2018-02-01

Applicant: ASM IP Holding B.V.

Inventor： David Kohen ,  Nupur Bhargava ,  John Tolle ,  Vijay D'Costa

IPC: H01L21/00 ,  H01L21/02 ,  H01L29/165

Abstract: A method for depositing a semiconductor structure on a surface of a substrate is disclosed. The method may include: depositing a first group IVA semiconductor layer over a surface of the substrate; contacting an exposed surface of the first group IVA semiconductor layer with a first gas comprising a first chloride gas; and depositing a second group IVA semiconductor layer over a surface of the first group IVA semiconductor layer. Related semiconductor structures are also disclosed.

公开(公告)号：US12040184B2

公开(公告)日：2024-07-16

申请号：US17145499

申请日：2021-01-11

Applicant: ASM IP Holding B.V.

Inventor： David Kohen ,  Harald Benjamin Profijt ,  Andrew Kretzschmar

IPC: H01L29/10 ,  H01L21/02 ,  H01L29/165 ,  H10B43/27

CPC classification number: H01L21/0245 ,  H01L21/02164 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L29/165 ,  H10B43/27 ,  H01L29/1054

Abstract: A method for forming a forming a semiconductor structure is disclosed. The method may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon germanium (Si1-xGex) seed layer directly on the silicon oxide layer, and depositing a germanium (Ge) layer directly on the silicon germanium (Si1-xGex) seed layer. Semiconductor structures including a germanium (Ge) layer deposited on silicon oxide utilizing an intermediate silicon germanium (Si1-xGex) seed layer are also disclosed.

公开(公告)号：US11557474B2

公开(公告)日：2023-01-17

申请号：US16932275

申请日：2020-07-17

Applicant: ASM IP Holding B.V.

Inventor： John Tolle ,  Joe Margetis ,  David Kohen

IPC: C23C16/30 ,  H01L21/02 ,  H01L29/08 ,  H01L29/66 ,  C23C16/458 ,  C23C16/02 ,  C23C16/52 ,  C23C16/22 ,  C23C16/44 ,  C23C16/46 ,  C23C16/455

Abstract: A method for forming a doped layer is disclosed. The doped layer may be used in a NMOS or a silicon germanium application. The doped layer may be created using an n-type halide species in a n-type dopant application, for example.

公开(公告)号：US20210327704A1

公开(公告)日：2021-10-21

申请号：US17141360

申请日：2021-01-05

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Joe Margetis ,  Xin Sun ,  David Kohen ,  Dieter Pierreux

IPC: H01L21/02 ,  C23C16/24 ,  C23C16/08 ,  C30B25/18 ,  C30B29/06 ,  C30B29/52 ,  C23C16/52

Abstract: Methods and systems for forming structures including one or more layers comprising silicon germanium and one or more layers comprising silicon are disclosed. Exemplary methods can include using a surfactant, using particular precursors, and/or using a transition step to improve an interface between adjacent layers comprising silicon germanium and comprising silicon.

公开(公告)号：US11031242B2

公开(公告)日：2021-06-08

申请号：US16183258

申请日：2018-11-07

Applicant: ASM IP Holding B.V.

Inventor： David Kohen

IPC: H01L21/02 ,  C23C16/46 ,  C23C16/455 ,  C30B25/02 ,  C23C16/06 ,  C30B29/52

Abstract: A method for depositing a boron doped silicon germanium (Si1-xGex) film is disclosed. The method may include: providing a substrate within a reaction chamber; heating the substrate to a deposition temperature; flowing a silicon precursor, a germanium precursor, and a halide gas into the reaction chamber through a first gas injector; flowing a boron dopant precursor into the reaction chamber through a second gas injector independent from the first gas injector; contacting the substrate with the silicon precursor, the germanium precursor, the halide gas and the boron dopant precursor; and depositing the boron doped silicon germanium (Si1-xGex) film over a surface of the substrate.

公开(公告)号：US20210134588A1

公开(公告)日：2021-05-06

申请号：US17145499

申请日：2021-01-11

Applicant: ASM IP Holding B.V.

Inventor： David Kohen ,  Harald Benjamin Profijt ,  Andrew Kretzschmar

IPC: H01L21/02 ,  H01L29/165 ,  H01L27/11582

Abstract: A method for forming a forming a semiconductor structure is disclosed. The method may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon germanium (Si1−xGex) seed layer directly on the silicon oxide layer, and depositing a germanium (Ge) layer directly on the silicon germanium (Si1−xGex) seed layer. Semiconductor structures including a germanium (Ge) layer deposited on silicon oxide utilizing an intermediate silicon germanium (Si1−xGex) seed layer are also disclosed.

公开(公告)号：US11482533B2

公开(公告)日：2022-10-25

申请号：US16789138

申请日：2020-02-12

Applicant: ASM IP Holding B.V.

Inventor： BokHeon Kim ,  David Kohen ,  Alexandros Demos

IPC: H01L27/108 ,  H01L29/94 ,  H01L27/115 ,  H01L21/28 ,  H01L27/11582 ,  H01L27/11556 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311

Abstract: An apparatus and a method for forming a 3-D NAND device are disclosed. The method of forming the 3-D NAND device may include forming a plug fill and a void. Advantages gained by the apparatus and method may include a lower cost, a higher throughput, little to no contamination of the device, little to no damage during etching steps, and structural integrity to ensure formation of a proper stack of oxide-nitride bilayers.

公开(公告)号：US20200266208A1

公开(公告)日：2020-08-20

申请号：US16789138

申请日：2020-02-12

Applicant: ASM IP Holding B.V.

Inventor： BokHeon Kim ,  David Kohen ,  Alexandros Demos

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L21/02 ,  H01L21/311 ,  H01L21/306

Abstract: An apparatus and a method for forming a 3-D NAND device are disclosed. The method of forming the 3-D NAND device may include forming a plug fill and a void. Advantages gained by the apparatus and method may include a lower cost, a higher throughput, little to no contamination of the device, little to no damage during etching steps, and structural integrity to ensure formation of a proper stack of oxide-nitride bilayers.

公开(公告)号：US10236177B1

公开(公告)日：2019-03-19

申请号：US15683701

申请日：2017-08-22

Applicant: ASM IP Holding B.V.

Inventor： David Kohen ,  Harald Benjamin Profijt

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/285 ,  H01L21/768 ,  H01L29/165 ,  H01L29/08 ,  H01L29/78 ,  H01L29/06 ,  H01L29/45 ,  H01L23/535 ,  C30B29/52 ,  C30B25/02 ,  C23C16/06

Abstract: A method for depositing a germanium tin (Ge1-xSnx) semiconductor is disclosed. The method may include; providing a substrate within a reaction chamber, heating the substrate to a deposition temperature and exposing the substrate to a germanium precursor and a tin precursor. The method may further include; depositing a germanium tin (Ge1-xSnx) semiconductor on the surface of the substrate, and exposing the germanium tin (Ge1-xSnx) semiconductor to a boron dopant precursor. Semiconductor device structures including a germanium tin (Ge1-xSnx) semiconductor formed by the methods of the disclosure are also provided.