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21.发明授权Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions 有权在电连接处去除半导体的费米能级的方法以及包含这种结的装置的方法公开(公告)号：US08766336B2
公开(公告)日：2014-07-01
申请号：US13687907
申请日：2012-11-28
Applicant: Acorn Technologies, Inc.
Inventor： Daniel E. Grupp , Daniel J. Connelly
IPC: H01L29/78
CPC classification number: H01L29/456 , H01L21/28537 , H01L29/0895 , H01L29/16 , H01L29/1608 , H01L29/161 , H01L29/45 , H01L29/47 , H01L29/66143 , H01L29/66643 , H01L29/78 , H01L29/7839 , H01L29/785 , H01L29/806 , H01L29/812 , H01L29/872
Abstract: An electrical device in which an interface layer comprising arsenic is disposed between and in contact with a conductor and a semiconductor. In some cases, the interface layer may be a monolayer of arsenic.
Abstract translation: 其中包含砷的界面层设置在导体和半导体之间并与其接触的电气装置。 在一些情况下，界面层可以是单层的砷。
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22.发明申请METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECTRICAL JUNCTION AND DEVICES INCORPORATING SUCH JUNCTIONS 有权用于识别电气连接处的半导体的FERMI电平的方法和包含这种结点的器件公开(公告)号：US20130119446A1
公开(公告)日：2013-05-16
申请号：US13687907
申请日：2012-11-28
Applicant: Acorn Technologies, Inc.
Inventor： Daniel E. Grupp , Daniel J. Connelly
IPC: H01L29/78
CPC classification number: H01L29/456 , H01L21/28537 , H01L29/0895 , H01L29/16 , H01L29/1608 , H01L29/161 , H01L29/45 , H01L29/47 , H01L29/66143 , H01L29/66643 , H01L29/78 , H01L29/7839 , H01L29/785 , H01L29/806 , H01L29/812 , H01L29/872
Abstract: An electrical device in which an interface layer comprising arsenic is disposed between and in contact with a conductor and a semiconductor. In some cases, the interface layer may be a monolayer of arsenic.
Abstract translation: 其中包含砷的界面层设置在导体和半导体之间并与其接触的电气装置。 在一些情况下，界面层可以是单层的砷。
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