公开(公告)号：US07915949B2

公开(公告)日：2011-03-29

申请号：US12403158

申请日：2009-03-12

申请人： Karl Robert Erickson ,  Phil Christopher Felice Paone ,  David Paul Paulsen ,  John Edward Sheets, II

发明人： Karl Robert Erickson ,  Phil Christopher Felice Paone ,  David Paul Paulsen ,  John Edward Sheets, II

IPC分类号： H01H37/76 ,  H01H85/00

CPC分类号： G11C17/16 ,  G11C17/18

摘要： A method and an eFuse programming circuit for implementing resistance determination of an eFuse before initiating eFuse blow, and a design structure on which the subject circuit resides are provided. An eFuse on a chip is used to set current flow through a known resistor and measure the eFuse resistance. An applied voltage to program selected eFuses on the chip is selected responsive to an identified eFuse voltage value.

摘要翻译： 一种用于在开始eFuse吹制之前实现eFuse的电阻确定的方法和eFuse编程电路，以及提供了该主题电路所在的设计结构。 芯片上的eFuse用于设置电流通过已知电阻并测量eFuse电阻。 响应于所识别的eFuse电压值来选择对芯片上的所选eFuse进行编程的施加电压。

公开(公告)号：US07868391B2

公开(公告)日：2011-01-11

申请号：US12478098

申请日：2009-06-04

申请人： Phil Christopher Felice Paone ,  David P. Paulsen ,  John E. Sheets, II ,  Kelly L. Williams

发明人： Phil Christopher Felice Paone ,  David P. Paulsen ,  John E. Sheets, II ,  Kelly L. Williams

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L27/01 ,  H01L27/12 ,  H01L31/0392 ,  H01L23/62

CPC分类号： H01L27/092 ,  H01L21/8221 ,  H01L21/823814 ,  H01L21/823857 ,  H01L21/823871 ,  H01L27/0688

摘要： A 3-D (Three Dimensional) inverter having a single gate electrode. The single gate electrode has a first gate dielectric between the gate electrode and a body of a first FET (Field Effect transistor) of a first doping type, the first FET having first source/drain regions in a semiconductor substrate, or in a well in the semiconductor substrate. The single gate electrode has a second gate dielectric between the gate electrode and a body of a second FET of opposite doping to the first FET. Second source/drain regions of the second FET are formed from epitaxial layers grown over the first source/drain regions.

摘要翻译： 具有单个栅电极的3-D（三维）逆变器。 单栅电极在栅电极和第一掺杂类型的第一FET（场效应晶体管）的主体之间具有第一栅极电介质，第一FET在半导体衬底中具有第一源/漏区，或在第 半导体衬底。 单栅电极在栅电极和与第一FET相反掺杂的第二FET的本体之间具有第二栅极电介质。 第二FET的第二源极/漏极区域由在第一源极/漏极区域上生长的外延层形成。