公开(公告)号：US20120244715A1

公开(公告)日：2012-09-27

申请号：US13512634

申请日：2010-12-02

申请人： Kyle S. Lebouitz ,  Andrew David Johnson ,  Eugene Karwacki, JR. ,  Suhas Narayan Ketkar ,  John Neumann ,  David L. Springer

发明人： Kyle S. Lebouitz ,  Andrew David Johnson ,  Eugene Karwacki, JR. ,  Suhas Narayan Ketkar ,  John Neumann ,  David L. Springer

IPC分类号： H01L21/306 ,  B05C11/10 ,  B44C1/22

CPC分类号： H01L21/3065 ,  H01L21/32135

摘要： In a method and system for vapor etching, a material to be etched and an etch resistant material are placed into an etching chamber. Thereafter, a pressure in the etching chamber is adjusted to a desired pressure and the substrate is exposed to an etching gas and a gas that comprises oxygen. The exposure substantially selectively etches the material to be etched while substantially avoiding the etching of the etch resistant material.

摘要翻译： 在用于蒸气蚀刻的方法和系统中，将要蚀刻的材料和耐蚀刻材料放置在蚀刻室中。 此后，将蚀刻室中的压力调节到期望的压力，并将衬底暴露于蚀刻气体和包含氧的气​​体。 曝光基本上选择性地蚀刻待蚀刻的材料，同时基本上避免蚀刻抗蚀刻材料。

公开(公告)号：US20120079939A1

公开(公告)日：2012-04-05

申请号：US13236112

申请日：2011-09-19

申请人： Andrew David Johnson ,  Richard Vincent Pearce ,  Thomas Stephen Farris ,  Timothy Christopher Golden ,  Matthew John Bosco ,  Eugene Joseph Karwacki, JR. ,  David Charles Winchester ,  Jeffrey Raymond Hufton

发明人： Andrew David Johnson ,  Richard Vincent Pearce ,  Thomas Stephen Farris ,  Timothy Christopher Golden ,  Matthew John Bosco ,  Eugene Joseph Karwacki, JR. ,  David Charles Winchester ,  Jeffrey Raymond Hufton

IPC分类号： B01D53/04

CPC分类号： B01D53/0476 ,  B01D2253/102 ,  B01D2253/104 ,  B01D2253/106 ,  B01D2253/108 ,  B01D2256/10 ,  B01D2256/18 ,  B01D2257/102 ,  B01D2257/11 ,  B01D2257/2047 ,  B01D2257/2066 ,  B01D2257/55 ,  B01D2257/80 ,  C01B23/0057 ,  C01B23/0068 ,  C01B2210/0037 ,  C01B2210/0045 ,  C01B2210/0051 ,  C01B2210/0056 ,  C01B2210/0062 ,  Y02P20/154

摘要： The present invention discloses the improvements to a vacuum swing adsorption (VSA) process used for Xe recovery. By only collecting the recovered gas mixture after the initial evacuation of N2 from the adsorbent vessel and void space, the recovered Xe is not diluted by N2 contained in the adsorbent vessel and void space. The concentration of the recovered Xe can by increased (high purity), simultaneously little Xenon is lost. During the initial evacuation of N2, the vessel has been evacuated to a pressure less than 1 atmospheric pressure, for example, from 100 to 1 torr.

摘要翻译： 本发明公开了用于Xe回收的真空挥发吸附（VSA）方法的改进。 通过在从吸附剂容器和空隙空间初始抽出N 2之后仅收集回收的气体混合物，回收的Xe不被包含在吸附剂容器和空隙空间中的N 2稀释。 回收的Xe的浓度可以通过增加（高纯度），同时少量的氙被丢失。 在N2初始抽真空期间，将容器抽真空至小于1大气压，例如100至1托。

公开(公告)号：US20120012201A1

公开(公告)日：2012-01-19

申请号：US13009400

申请日：2011-01-19

申请人： David Charles Winchester ,  Matthew John Bosco ,  Gerald W. Klein ,  Isaac Patrick West ,  Richard Linton Samsal ,  Douglas Paul Dee ,  Andrew David Johnson ,  Eugene Joseph Karwacki, JR.

发明人： David Charles Winchester ,  Matthew John Bosco ,  Gerald W. Klein ,  Isaac Patrick West ,  Richard Linton Samsal ,  Douglas Paul Dee ,  Andrew David Johnson ,  Eugene Joseph Karwacki, JR.

IPC分类号： F16K21/04

CPC分类号： B01D53/04 ,  B01D2256/18 ,  B01D2258/0216 ,  B01D2259/402 ,  Y10T137/7837

摘要： An apparatus and process for recovering a desired gas such as xenon difluoride, xenon, argon, helium or neon, from the effluent of a chemical process reactor that utilizes such gases alone or in a gas mixture or in a molecule that becomes decomposed wherein the chemical process reactor uses a sequence of different gas composition not all of which contain the desired gas and the desired gas is captured and recovered substantially only during the time the desired gas is in the effluent.

摘要翻译： 用于从化学处理反应器的流出物中单独或以气体混合物或分解成分解的分子中回收所需气体如二氯化氙，氙气，氩气，氦气或氖气的设备和方法，其中化学 过程反应器使用不同于所有气体组合的序列，其中所有气体组成都不包含所需气体，并且所需气体基本上仅在所需气体在流出物中的时间内被捕获和回收。

公开(公告)号：US20080142046A1

公开(公告)日：2008-06-19

申请号：US11638120

申请日：2006-12-13

申请人： Andrew David Johnson ,  Peter James Maroulis ,  Vasil Vorsa ,  Robert Gordon Ridgeway

发明人： Andrew David Johnson ,  Peter James Maroulis ,  Vasil Vorsa ,  Robert Gordon Ridgeway

IPC分类号： B08B7/04

CPC分类号： C23C16/4405 ,  B08B7/0035

摘要： A thermal process for cleaning equipment surfaces of undesired silicon nitride in semiconductor processing chamber with thermally activated source of pre-diluted fluorine is disclosed in the specification. The process comprising:(a)flowing pre-diluted fluorine in an inert gas through the chamber;(b)maintaining the chamber at an elevated temperature of 230° C. to 565° C. to thermally disassociate the fluorine;(c)cleaning undesired silicon nitride from the surfaces by chemical reaction of thermally disassociated fluorine in (b) with the undesired silicon nitride to form volatile reaction products;(d)removing the volatile reaction products from the chamber.

摘要翻译： 在本说明书中公开了一种利用热激活的预稀释氟源在半导体处理室中清洁不需要的氮化硅的设备表面的热处理。 该方法包括：（a）将预稀释的氟流入惰性气体通过该室; （b）将室保持在230℃至565℃的升高温度以使氟分解; （c）通过（b）中的热分解氟与不需要的氮化硅的化学反应从表面清除不需要的氮化硅以形成挥发性反应产物; （d）从室中除去挥发性反应产物。

公开(公告)号：US5861065A

公开(公告)日：1999-01-19

申请号：US792917

申请日：1997-01-21

申请人： Andrew David Johnson

发明人： Andrew David Johnson

IPC分类号： H01L21/302 ,  C23C16/44 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31 ,  B08B9/00

CPC分类号： C23C16/4405

摘要： A method for the dynamic cleaning of semiconductor fabrication equipment and particularly quartzware with thermally activated nitrogen trifluoride and a source of oxygen at elevated temperatures, typically at the process operation temperature, wherein the cleaning effluent is safely removed and cleaning by-products isolated or diluted to provide for efficient cleaning and rapid restarts of fabrication equipment so cleaned.

摘要翻译： 一种用于动态清洁半导体制造设备的方法，特别是在高温下（通常在工艺操作温度下）具有热活化的三氟化氮和氧源的石英制品，其中清洁流出物被安全地除去并清洗分离或稀释的副产物 提供有效的清洁和快速重新启动如此清洁的制造设备。