公开(公告)号：US20230052154A1

公开(公告)日：2023-02-16

申请号：US17785695

申请日：2021-09-13

Applicant: Hefei Xinsheng Optoelectronics Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Ming WANG ,  Haitao WANG ,  Jun CHENG ,  Ce ZHAO

IPC: H01L27/32 ,  H01L29/786 ,  H01L29/66

Abstract: A display substrate, a method for manufacturing the same, and a display device are provided, belonging to the technical field of display. The display substrate includes: a base substrate; a thin film transistor on the base substrate, the thin film transistor including an active layer and a gate electrode on one side of the active layer away from the base substrate, an orthographic projection of the gate electrode on the base substrate at least partially overlapping with an orthographic projection of the active layer on the base substrate; and a conductive pattern arranged on a layer different from the gate electrode, the conductive pattern and the gate electrode being separated by an insulating layer, the orthographic projection of the gate electrode on the base substrate at least partially overlapping with an orthographic projection of the conductive pattern on the base substrate. The technical solution of the present disclosure can improve the yield of OLED display substrates.

公开(公告)号：US20220179267A1

公开(公告)日：2022-06-09

申请号：US17361352

申请日：2021-06-29

Applicant: Chongqing BOE Optoelectronics Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Qi CAO ,  Yong SHU ,  Xinlei WANG ,  Ming WANG ,  Nan WANG ,  Junjie JIANG ,  Xian WANG

IPC: G02F1/1362 ,  G06F1/16

Abstract: Provided are a display unit and a display apparatus, the display unit includes a back plate and a print circuit board disposed on the back plate, wherein the print circuit board is connected to the back plate through a screw, and is provided with a first electrostatic discharge region and a first electrostatic discharge unit; the first electrostatic discharge region is connected to the back plate through the screw to form a first electrostatic discharge channel, and the first electrostatic discharge unit is connected to the back plate to form a second electrostatic discharge channel.

公开(公告)号：US20210335250A1

公开(公告)日：2021-10-28

申请号：US16343760

申请日：2018-11-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ming WANG ,  Wenchao BAO

IPC: G09G3/3258 ,  G09G3/3266

Abstract: The present disclosure relates to a technical field of display, and provides a scan signal adjusting method, a scan signal adjusting device, and a display panel. The scan signal adjusting method is used to adjust a scan signal of a control end of a switching transistor in a pixel driving circuit. The method includes obtaining a threshold voltage of the switching transistor and adjusting a voltage of the scan signal during a turn-off period according to the threshold voltage of the switching transistor.

公开(公告)号：US20210288283A1

公开(公告)日：2021-09-16

申请号：US17260018

申请日：2020-05-27

Applicant: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei SONG ,  Ce ZHAO ,  Yuankui DING ,  Ming WANG ,  Ning LIU ,  Leilei CHENG ,  Junlin PENG ,  Yingbin HU ,  Liusong NI

IPC: H01L51/52 ,  H01L51/56

Abstract: A light-emitting device includes: an anode disposed on a base, and a cathode disposed on a side of the anode facing away from the base. The anode includes a light-reflecting sub-electrode and a light-transmitting sub-electrode located on a surface of the light-reflecting sub-electrode facing away from the base, and an orthographic projection of the light-transmitting sub-electrode on the base is located within a range of an orthographic projection of the light-reflecting sub-electrode on the base. The light-reflecting sub-electrode includes a metal pattern and a metal oxide pattern, and the metal oxide pattern is located in at least part of a region around the metal pattern.

公开(公告)号：US20210043660A1

公开(公告)日：2021-02-11

申请号：US16862865

申请日：2020-04-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ming WANG ,  Ce ZHAO ,  Wei SONG

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786

Abstract: The present disclosure provides a method for preparing an interlayer insulating layer and a method for manufacturing a thin film transistor, and a thin film transistor, belongs to the field of display technology, and can solve the problem of poor resistance to breakdown of the interlayer insulating layer in the related art. The method for preparing an interlayer insulating layer includes the following steps: forming a silicon oxide layer with a first reaction gas and forming a silicon nitride layer with a second reaction gas such that hydrogen content in the silicon nitride layer is less than or equal to hydrogen content in the silicon oxide layer.

公开(公告)号：US20200312881A1

公开(公告)日：2020-10-01

申请号：US15777118

申请日：2017-09-26

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Jun LIU ,  Ming WANG ,  Jun WANG ,  Bin ZHOU

IPC: H01L27/12

Abstract: A manufacturing method of a display substrate, an array substrate and a display device are provided. The method includes forming a first wire, a first insulation layer, a first and second metal layer, and a photoresist layer; forming a photoresist retained pattern above the first wire; forming a second and first metal layer retained pattern under the photoresist retained pattern; forming a second insulation layer with a thickness less than or equal to a sum of thicknesses of the first and second metal layer; the second insulation layer forming a fracture region at a boundary between a part covering the first insulation layer and another part covering the second metal layer retained pattern; removing the first and second metal layer retained patterns by a wet etch process to expose the first insulation layer; and forming a contact hole exposing the first wire.

公开(公告)号：US20200168640A1

公开(公告)日：2020-05-28

申请号：US16402191

申请日：2019-05-02

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ming WANG ,  Wei SONG ,  Hui LI

IPC: H01L27/12 ,  H01L21/768 ,  H01L23/544 ,  H01L27/32

Abstract: A display substrate, a manufacturing method thereof, and a display device are provided. According to embodiments of the present disclosure, the manufacturing method of a display substrate comprises: fabricating a gate electrode, a gate electrode insulating layer, and a semiconductor active layer sequentially on a base substrate; fabricating a first etching stopping layer and a second etching stopping layer on the base substrate with the semiconductor active layer fabricated thereon, wherein the first etching stopping layer is disposed in a display area of the display substrate, the second etching stopping layer is disposed in a peripheral area of the display substrate, and the second etching stopping layer is a non-transparent layer; and fabricating source/drain electrodes by a patterning process, on the base substrate with the first and second etching stopping layers fabricated thereon, wherein the second etching stopping layer is used as an alignment marker in fabricating the source/drain electrodes.