公开(公告)号：US20240397650A1

公开(公告)日：2024-11-28

申请号：US18696957

申请日：2023-07-04

Applicant: Hefei BOE Joint Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Luke DING ,  Can YUAN ,  Cheng XU

IPC: H05K5/02

Abstract: The present disclosure provides a display substrate and a display device. The display substrate includes: a base substrate including a display area and a first frame area located on one side of the display area; and a first power bus at least located in the first frame area. The first power bus includes a first sub-bus, a second sub-bus and at least two connecting wires. The first sub-bus is located between the second sub-bus and the display area, and the first sub-bus is electrically connected to the second sub-bus by means of the at least two connecting wires.

公开(公告)号：US20240381716A1

公开(公告)日：2024-11-14

申请号：US18249397

申请日：2022-05-20

Applicant: HEFEI BOE JOINT TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Luke DING ,  Yongqian LI ,  Can YUAN

IPC: H10K59/131

Abstract: The disclosure provides a display substrate, which has a display region and a peripheral region, and includes a base substrate, a plurality of sub-pixels, a first power signal line and a second power signal line at least partially located in the display region, a first power signal bus and a second power signal bus located in the peripheral region; the sub-pixels are located in the display region; the first power signal line and the second power signal line are electrically connected to the first power signal bus and the second power signal bus, respectively; the second power signal bus includes a first part disposed on a side of the first power signal bus close to the display region, and a second part disposed on a side of the first power signal bus away from the display region, so as to at least partially surround the first power signal bus.

公开(公告)号：US20210296406A1

公开(公告)日：2021-09-23

申请号：US17264283

申请日：2020-05-12

Applicant: Hefei Xinsheng Optoelectronics Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Jingang FANG ,  Luke DING ,  Jun LIU ,  Bin ZHOU ,  Jun CHENG

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

Abstract: The present disclosure relates to the technical field of display, and discloses an array substrate, a preparation method therefor, and a display device. When dielectric layers, such as a buffer layer, an interlayer dielectric layer, and a gate insulation layer, are formed between a source-drain electrode and a substrate, the thickness of at least one dielectric layer among said dielectric layers underneath a first through hole for connecting a drain electrode and an anode is increased, which is to say that the drain electrode is raised to be further away from the substrate, causing the drain electrode to be closer to a surface of a planarization layer that faces away from the substrate, i.e., reducing the thickness of a portion of the planarization layer above the drain electrode.

公开(公告)号：US20200168687A1

公开(公告)日：2020-05-28

申请号：US16441422

申请日：2019-06-14

Applicant: Hefei Xinsheng Optoelectronics Technology Co., Ltd. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yingbin HU ,  Liangchen YAN ,  Ce ZHAO ,  Yuankui DING ,  Yang ZHANG ,  Yongchao HUANG ,  Luke DING ,  Jun LIU

IPC: H01L27/32 ,  H01L51/56

Abstract: A fabrication method for fabricating a thin-film transistor includes: forming a light shielding layer on a substrate; forming a buffer layer covering the light shielding layer, and forming a semiconductor material layer stacked on a surface of the buffer layer away from the substrate; forming a through hole penetrating through the buffer layer and the semiconductor material layer; patterning the semiconductor material layer to form an active layer covering a partial region of the buffer layer; forming a gate insulator layer on a surface of the active layer away from the substrate and a gate stacked on a surface of the gate insulator layer away from the substrate; forming a source and a drain on the surface of the buffer layer away from the substrate; and forming a dielectric layer covering the gate, the source, the drain, and the buffer layer, and being recessed into the through hole to form a groove.

公开(公告)号：US20170213975A1

公开(公告)日：2017-07-27

申请号：US15223465

申请日：2016-07-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Leilei CHENG ,  Dongfang WANG ,  Yongchao HUANG ,  Bin ZHOU ,  Luke DING ,  Min HE

IPC: H01L51/00 ,  H01L51/52 ,  H01L51/56 ,  H01L27/32

CPC classification number: H01L51/0012 ,  H01L27/3244 ,  H01L51/0016 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323

Abstract: A method for fabricating an Organic Light-Emitting Diode (OLED) display panel is provided. The method includes arranging Thin-Film Transistor (TFT) devices on one side of a substrate and a function layer on the other side of the substrate to form a laminate including both the TFT devices and the function layer, attaching the laminate onto a loading platform such that the function layer included in the laminate faces towards the loading platform, and conducting a process on the laminate to form an organic electroluminescent material layer on surfaces of the TFT devices.