METHOD FOR MANUFACTURING DISPLAY PANEL, DISPLAY PANEL AND TO-BE-CUT DISPLAY PANEL

    公开(公告)号:US20240213278A1

    公开(公告)日:2024-06-27

    申请号:US17913808

    申请日:2021-10-26

    IPC分类号: H01L27/12

    CPC分类号: H01L27/1288 H01L27/124

    摘要: The present disclosure provides a method for manufacturing a display panel, a display panel and a to-be-cut display panel, and relates to the field of display technologies. The method includes: forming a first electrostatic protective circuit and a source and drain conductive pattern on a base substrate; removing the source and drain conductive pattern within the target cutting region; forming a to-be-cut display panel by forming a superstructure on the base substrate; and cutting the to-be-cut display panel in the target cutting region. When manufacturing the internal structure of the display panel, only the source and drain conductive pattern in the target cutting region is removed, while the electrostatic protective circuit in the target cutting region is retained. In this way, the electrostatic protective circuit can always play the function of electrostatic protective during the formation of the internal structure of the display panel, such that the internal structure of the display panel is avoided from being damaged by electrostatic, the manufacturing yield of the display panel improved, the problem of low manufacturing yield of the display panel in the related technology is solved, and the effect of improving the manufacturing yield of the display panel is achieved.

    METHOD FOR CONTROLLING CHARGING TIME OF DISPLAY PANEL, AND ELECTRONIC APPARATUS

    公开(公告)号:US20210335245A1

    公开(公告)日:2021-10-28

    申请号:US17259702

    申请日:2020-06-24

    摘要: A method for controlling a charging time of a display panel includes: during t0+kΔt in a (k+1)-th blanking time, writing a data voltage to a gate of a driving transistor, and detecting a voltage Vk_(j,i) of a second electrode of the driving transistor; during a t0+(k+r)Δt in a (k+1+r)-th blanking time, writing the data voltage to the gate of the driving transistor, and detecting a voltage Vk+i_(j,i) of the second electrode of the driving transistor; determining whether ΔVj,i=Vk+1_ji−Vk_ji is less than or equal to a target voltage difference VT; if ΔVj,i≤VT, taking the T=t0+kΔt as an expected charging time of a sub-pixel; if ΔVj,i>VT, cyclically performing the charging step described above to obtain ΔVj,i=Vk+p+1_(j,i)−Vk+p_(j,i), and comparing ΔVj,i with the target voltage difference VT, until ΔVj,i≤VT, taking t0+(k+p+r−1)Δt as the expected charging time of the sub-pixel. p is taken from 1, and increases by 1 for each cycle.