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    Hole printing by packing and unpacking using alternating phase-shifting masks
    22.
    发明授权
    Hole printing by packing and unpacking using alternating phase-shifting masks 有权
    通过使用交替的相移掩模打包和拆包打孔

    公开(公告)号：US06664011B2

    公开(公告)日：2003-12-16

    申请号：US10005806

    申请日：2001-12-05

    Applicant: Burn-Jeng Lin ,  Shinn-Sheng Yu ,  Bang-Chein Ho

    Inventor： Burn-Jeng Lin ,  Shinn-Sheng Yu ,  Bang-Chein Ho

    IPC: G03F900

    CPC classification number: G03F1/30 ,  G03F1/70 ,  G03F7/0035 ,  G03F7/70283 ,  H01L21/0274 ,  H01L21/31144

    Abstract: A new method is provided for the creation of contact holes. The DOF and MEF of closely packed holes can be improved using Alternating Phase Shifting Mask (Alt PSM) for the exposure of the holes. However, Alt PSM are dependent on hole density or hole separation and are less effective where holes are relatively further separated from each other. In order to improve DOF and MEF performance for the creation of holes, the invention adds extra holes to a given pattern of contact holes on the surface of a first mask, thus densifying the pattern of holes on the first mask and therefore reducing the range of the hole-diameter to hole separation ratio. The pattern of added holes is alternating in phase with the pattern of desired holes. The added holes will be filled up using a second mask.

    Abstract translation: 提供了一种创建接触孔的新方法。 密封孔洞的DOF和MEF可以通过使用交替移相掩模（Alt PSM）进行改进，用于曝光孔。 然而，Alt PSM取决于孔密度或孔分离，并且在孔相对进一步分离的情况下效果较差。 为了改善用于产生孔的DOF和MEF性能，本发明为第一掩模的表面上的给定图案的接触孔增加了额外的孔，从而使第一掩模上的孔的图案致密化，因此减小了 孔径与孔分离比。 添加的孔的图案与期望的孔的图案相位交替。 添加的孔将使用第二个掩模填充。

    Method for forming openings in a substrate using a packing and unpacking process
    24.
    发明申请
    Method for forming openings in a substrate using a packing and unpacking process 审中-公开
    使用包装和拆包工艺在基材中形成开口的方法

    公开(公告)号：US20050181313A1

    公开(公告)日：2005-08-18

    申请号：US10780946

    申请日：2004-02-18

    Applicant: Jen-Chieh Shih ,  Bang-Chein Ho

    Inventor： Jen-Chieh Shih ,  Bang-Chein Ho

    IPC: G03F7/00 ,  G03F7/095 ,  G03F7/20

    CPC classification number: G03F7/203 ,  G03F7/095

    Abstract: A method and system is disclosed for selectively forming photoresist patterns for making openings in a substrate. A layer of photoresist is deposited on the substrate which contains one or more types of photoresist dissolving agent generators. A first set of areas of the photoresist is exposed to a first light source through a first mask to activate a photoresist dissolving agent generator of a first type to release a first photoresist dissolving agent in the first set of areas. Then, a second set of areas of the photoresist is also exposed to a second light source through a second mask to activate a photoresist dissolving agent generator of a second type to release a second photoresist dissolving agent in the second set of areas. The second set of areas is a sub set of the first set of areas such that the first and second photoresist dissolving agents in the second set of areas neutralize each other to protect the second set of areas from being used as the patterns for forming the openings.

    Abstract translation: 公开了用于选择性地形成用于在基板中形成开口的光刻胶图案的方法和系统。 光致抗蚀剂层沉积在包含一种或多种类型的光致抗蚀剂溶解剂发生器的基底上。 光致抗蚀剂的第一组区域通过第一掩模暴露于第一光源，以激活第一类型的光致抗蚀剂溶解剂发生器，以在第一组区域中释放第一光致抗蚀剂溶解剂。 然后，光致抗蚀剂的第二组区域也通过第二掩模暴露于第二光源，以激活第二类型的光致抗蚀剂溶解剂发生器，以在第二组区域中释放第二光致抗蚀剂溶解剂。 第二组区域是第一组区域的子集，使得第二组区域中的第一和第二光致抗蚀剂溶解剂彼此中和以保护第二组区域不被用作形成开口的图案 。

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