公开(公告)号：US07745847B2

公开(公告)日：2010-06-29

申请号：US11836772

申请日：2007-08-09

申请人： Chu-Yin Tseng ,  Shih-Chieh Hsu ,  Chih-Chiang Wu ,  Shyh-Fann Ting ,  Po-Lun Cheng ,  Hsuan-Hsu Chen

发明人： Chu-Yin Tseng ,  Shih-Chieh Hsu ,  Chih-Chiang Wu ,  Shyh-Fann Ting ,  Po-Lun Cheng ,  Hsuan-Hsu Chen

IPC分类号： H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： H01L21/823814 ,  H01L21/823807 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/7833 ,  H01L29/7848

摘要： The present invention provides a method for fabricating a metal oxide semiconductor transistor. First, a semiconductor substrate is provided and at least a gate is formed on the semiconductor substrate. A protective layer is then formed on the semiconductor substrate and the gate. Subsequently, at least a recess is formed in the semiconductor substrate adjacent to the gate, and then an epitaxial layer is formed in the recess. A lightly doped region is formed in the semiconductor substrate adjacent to the gate. Finally, a spacer is formed on the sidewall of the gate.

摘要翻译： 本发明提供一种制造金属氧化物半导体晶体管的方法。 首先，提供半导体衬底，并且至少在半导体衬底上形成栅极。 然后在半导体衬底和栅极上形成保护层。 随后，在与栅极相邻的半导体衬底中形成至少一个凹部，然后在凹部中形成外延层。 在与栅极相邻的半导体衬底中形成轻掺杂区域。 最后，在栅极的侧壁上形成间隔物。

公开(公告)号：US20090032900A1

公开(公告)日：2009-02-05

申请号：US11833789

申请日：2007-08-03

申请人： Yao-Chang Wang ,  Shih-Chieh Hsu ,  Chih-Chiang Wu ,  Huang-Yi Lin ,  Chi-Hong Pai ,  Tsung-Wen Chen ,  Hung-Ling Shih

发明人： Yao-Chang Wang ,  Shih-Chieh Hsu ,  Chih-Chiang Wu ,  Huang-Yi Lin ,  Chi-Hong Pai ,  Tsung-Wen Chen ,  Hung-Ling Shih

IPC分类号： H01L29/00 ,  H01L21/762

CPC分类号： H01L21/3043 ,  H01L21/76224

摘要： A method of protecting a shallow trench isolation structure is described, which is applied to a semiconductor device process that includes a first process causing a recess in the STI structure and a second process after the first process. The method includes forming a silicon nitride layer in the recess along the profile of the same during the second process.

摘要翻译： 描述了保护浅沟槽隔离结构的方法，其应用于半导体器件工艺，该半导体器件工艺包括引起STI结构中的凹部的第一工艺和在第一工艺之后的第二工艺。 该方法包括在第二工艺期间沿其轮廓在凹槽中形成氮化硅层。