MICRO PRIME LENS SYSTEM
    21.
    发明申请
    MICRO PRIME LENS SYSTEM 审中-公开
    MICRO PRIME镜头系统

    公开(公告)号:US20110058263A1

    公开(公告)日:2011-03-10

    申请号:US12629972

    申请日:2009-12-03

    CPC classification number: G02B13/004

    Abstract: A micro prime lens system is provided. From an object side to an image side, the micro prime lens system sequentially includes a first lens, a second lens, a third lens and a fourth lens, which have a positive, a negative, a positive and a negative index of refraction, respectively. The third lens is an aspherical lens made of glass material and conforms to the following condition: 0.3

    Abstract translation: 提供微型主镜头系统。 从物体侧到像侧,微型主体透镜系统分别依次包括具有正,负,正和负折射率的第一透镜,第二透镜,第三透镜​​和第四透镜 。 第三透镜是由玻璃材料制成的非球面透镜,符合以下条件:0.3

    Mini Fixed Focus Lens Module
    22.
    发明申请
    Mini Fixed Focus Lens Module 审中-公开
    迷你固定焦距镜头模块

    公开(公告)号:US20110058262A1

    公开(公告)日:2011-03-10

    申请号:US12872591

    申请日:2010-08-31

    CPC classification number: G02B13/18 G02B13/004 G02B13/16

    Abstract: A mini fixed focus lens module is provided. From an object end to an image end thereof, the mini fixed focus lens module sequentially includes a first lens, a second lens, a third lens and a fourth lens. The first lens has a positive diopter, the second lens has a negative diopter, the third lens has a positive diopter, the fourth lens has a negative diopter, a combined diopter of the second and third lenses is positive, and the mini fixed focus lens module satisfies the following formula: 0.2

    Abstract translation: 提供微型固定焦距透镜模块。 从目标端到图像端,微型定焦镜头模块依次包括第一透镜,第二透镜,第三透镜​​和第四透镜。 第一透镜具有正屈光度,第二透镜具有负屈光度,第三透镜​​具有正屈光度,第四透镜具有负屈光度,第二透镜和第三透镜的组合屈光度为正,并且微型固定焦距透镜 模块满足以下公式:0.2

    MIM capacitor in a copper damascene interconnect
    23.
    发明授权
    MIM capacitor in a copper damascene interconnect 有权
    MIM电容器在铜镶嵌互连中

    公开(公告)号:US07483258B2

    公开(公告)日:2009-01-27

    申请号:US11300567

    申请日:2005-12-13

    Abstract: A metal-insulator-metal capacitor formed in a multilevel semiconductor device utilizes the copper interconnect levels of the semiconductor device as parts of the capacitor. A lower capacitor plate consists of a copper interconnect level and a first metal layer formed on the copper interconnect level by selective deposition methods. The upper capacitor plate includes the same pattern as the capacitor dielectric, the pattern having an area less than the area of the lower capacitor plate. The upper capacitor plate is formed of a second metal layer. The first and second metal layers may each be formed of cobalt, tungsten, nickel, molybdenum, or a combinations of one of the aforementioned elements with boron and/or phosphorus. Conductive vias provide contact from the upper capacitor plate and lower capacitor plate, to interconnect levels.

    Abstract translation: 形成在多电平半导体器件中的金属 - 绝缘体 - 金属电容器利用半导体器件的铜互连电平作为电容器的部分。 下电容器板由铜互连层和通过选择性沉积方法形成在铜互连层上的第一金属层组成。 上部电容器板包括与电容器电介质相同的图案,该图案具有小于下部电容器板的面积的面积。 上部电容器板由第二金属层形成。 第一和第二金属层可以各自由钴,钨,镍,钼或上述元素之一与硼和/或磷的组合形成。 导电通孔提供从上电容器板和下电容器板到互连电平的接触。

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