公开(公告)号：US09324739B1

公开(公告)日：2016-04-26

申请号：US14121896

申请日：2014-11-03

申请人： Ishiang Shih ,  Andy Shih ,  Cindy Qiu ,  Julia Qiu ,  Yi-Chi Shih ,  Chunong Qiu

发明人： Ishiang Shih ,  Andy Shih ,  Cindy Qiu ,  Julia Qiu ,  Yi-Chi Shih ,  Chunong Qiu

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L27/32

CPC分类号： H01L29/7869 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/78696

摘要： In one embodiment of the invention, a high electron mobility thin film transistor with a plurality of gate insulating layers and a metal oxynitride active channel layer is provided for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and minimize unwanted power dissipation in the backplane circuit.Another embodiment of the invention provides a high electron mobility thin film transistor structure with a plurality of metal oxynitride active channel layers and a gate insulating layer for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and to minimize unwanted power dissipation in the backplane circuit.In yet another embodiment of the invention a high electron mobility thin film transistor structure with a plurality of gate insulating layers and a plurality of metal oxynitride active channel layers for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layers and to minimize unwanted power dissipation in the backplane circuit.