公开(公告)号：US20190252418A1

公开(公告)日：2019-08-15

申请号：US16393314

申请日：2019-04-24

申请人： HON HAI PRECISION INDUSTRY CO., LTD.

发明人： YI-CHUN KAO ,  HSIN-HUA LIN

IPC分类号： H01L27/12 ,  H01L29/66 ,  H01L29/417 ,  H01L21/265 ,  H01L29/786

CPC分类号： H01L27/1251 ,  H01L21/26513 ,  H01L27/1225 ,  H01L27/1233 ,  H01L27/1237 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/127 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/7869 ,  H01L29/78696

摘要： An array substrate includes a substrate, a first insulator layer on the substrate, a second insulator layer on the first insulator layer, a third insulator layer on the second insulator layer, and a first TFT and a second TFT on the substrate. The second TFT includes a second gate electrode on the first insulator layer, a second channel layer on the second insulator layer, and a second source electrode and a second drain electrode on the third insulator layer. The third insulator layer covers the second channel layer and defines a second source hole and a second drain hole.

公开(公告)号：US20190252416A1

公开(公告)日：2019-08-15

申请号：US16391877

申请日：2019-04-23

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L29/04 ,  G09G3/20 ,  H01L29/45 ,  G11C19/28 ,  H01L29/10 ,  H01L29/24 ,  H01L29/417 ,  H01L29/423

CPC分类号： H01L27/1229 ,  G09G3/20 ,  G09G2310/0267 ,  G09G2310/0275 ,  G09G2310/0286 ,  G11C19/28 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/247 ,  H01L29/41733 ,  H01L29/42372 ,  H01L29/45 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693

摘要： An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured.

公开(公告)号：US20190251903A1

公开(公告)日：2019-08-15

申请号：US16394113

申请日：2019-04-25

申请人： Japan Display Inc.

发明人： Tetsuo MORITA ,  Hiroyuki Kimura ,  Makoto Shibusawa ,  Hiroshi Tabatake ,  Yasuhiro Ogawa

IPC分类号： G09G3/3233 ,  G02F1/1345 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786

CPC分类号： G09G3/3233 ,  G02F1/13452 ,  G02F1/13454 ,  G02F1/13624 ,  G02F1/136286 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0256 ,  G09G2320/0238 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3262 ,  H01L27/3272 ,  H01L29/7869

摘要： Disclosed is a display device including: a driving transistor, a first switching transistor, and a pixel transistor each having a gate and a pair of terminals; a storage capacitor having a pair of terminals; and a light-emitting element having an input terminal and an output terminal. One terminal of the driving transistor is electrically connected to one terminal of the pixel transistor. The other terminal of the driving transistor is electrically connected to one terminal of the first switching transistor and the input terminal of the light-emitting element. The other terminal of the first switching transistor is electrically connected to the gate of the driving transistor and one terminal of the capacitor. The one terminal of the capacitor overlaps with an active region of the driving transistor.

公开(公告)号：US20190189720A1

公开(公告)日：2019-06-20

申请号：US16206802

申请日：2018-11-30

申请人： LG Display Co., Ltd.

发明人： Kyoung-Nam LIM ,  Yu-Ho JUNG ,  Dong-Young KIM

IPC分类号： H01L27/32 ,  H01L51/00

CPC分类号： H01L27/3262 ,  H01L27/1225 ,  H01L27/1244 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3265 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869 ,  H01L51/0097 ,  H01L2251/5338 ,  H01L2251/5392

摘要： Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. Since a high potential supply line and a low potential supply line overlap each other with a protective film formed of an inorganic insulation material interposed therebetween, short-circuiting of the high potential supply line and the low potential supply line may be prevented.

公开(公告)号：US20190157430A1

公开(公告)日：2019-05-23

申请号：US15749096

申请日：2017-12-20

申请人： Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

发明人： Chunsheng Jiang

IPC分类号： H01L29/66 ,  H01L21/3213 ,  H01L29/45 ,  H01L27/12

CPC分类号： H01L29/66969 ,  H01L21/3213 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/1262 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/786

摘要： The invention provides a BCE TFT substrate and manufacturing method thereof. The method uses low deposition power and low oxygen content to deposit first silicon oxide thin film; then increases deposition power with low oxygen content to deposit second silicon oxide thin film. The first and second silicon oxide thin films form a passivation layer; the second silicon oxide film is implanted with oxygen to form a superficial layer so that the Si:O atomic ratio in the superficial layer is close to or same as Si:O atomic ratio of SiO2, to ensure the passivation layer in contact with the air side is strongly hydrophobic to prevent outside water vapor into the back-channel, while ensuring the side of passivation layer contacting IGZO active layer has a lower oxygen content to reduce the probability of forming unbalanced O-ions at the interface between passivation layer and IGZO active layer.

公开(公告)号：US20190157374A1

公开(公告)日：2019-05-23

申请号：US16240834

申请日：2019-01-07

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Mizuki SATO

IPC分类号： H01L27/32 ,  H01L29/786 ,  H01L27/12 ,  H01L27/15

CPC分类号： H01L27/3276 ,  G02F1/1362 ,  H01L27/10805 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/156 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/786 ,  H01L29/78654 ,  H01L29/78663 ,  H01L29/78672 ,  H01L29/78696

摘要： An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.

公开(公告)号：US20190081083A1

公开(公告)日：2019-03-14

申请号：US16186590

申请日：2018-11-12

申请人： JOLED Inc.

发明人： Atsuhito MURAI ,  Eiichi SATO ,  Masanori MIURA

IPC分类号： H01L27/12 ,  H01L51/52 ,  H01L29/786 ,  H01L27/32 ,  H01L29/417 ,  G02F1/1368

CPC分类号： H01L27/1225 ,  G02F1/1368 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/786 ,  H01L29/78666 ,  H01L29/78675 ,  H01L29/7869 ,  H01L51/5253 ,  H01L51/5256

摘要： According to one embodiment, a thin film transistor includes an oxide semiconductor layer provided above an insulating substrate and including a channel region between a source region and a drain region, a first insulating film provided in a region on the oxide semiconductor layer, which corresponds to the channel region, a gate electrode provided on the first insulating film, a first protective film provided on the oxide semiconductor layer, the first insulating film and the gate electrode, as an insulating film containing a metal, a second protective film provided on the first protective film and a third protective film provided on the second protective film, as an insulating film containing a metal.

公开(公告)号：US20180374415A1

公开(公告)日：2018-12-27

申请号：US15633960

申请日：2017-06-27

申请人： Japan Display Inc.

发明人： Tetsuo MORITA ,  Hiroyuki KIMURA ,  Makoto SHIBUSAWA ,  Hiroshi TABATAKE ,  Yasuhiro OGAWA

IPC分类号： G09G3/3225 ,  H01L27/32

CPC分类号： G09G3/3225 ,  G09G3/3233 ,  G09G3/3266 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/0262 ,  G09G2310/0291 ,  G09G2310/08 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3262 ,  H01L29/78672 ,  H01L29/7869

摘要： A display device includes a pixel region having a plurality of pixel and a driver circuit outside the pixel region. The pixels have a driving transistor and a switching transistor having a gate and a pair of terminals, a light-emitting element having an input terminal, and a storage capacitor having a pair of terminals. One terminal of the switching transistor is electrically connected to the gate of the driving transistor and one terminal of the storage capacitor. One terminal of the driving transistor is electrically connected to the other terminal of the storage capacitor and the input terminal. The driver circuit includes first and second transistors having a gate and a pair of terminal. The other terminal of the switching transistor is electrically connected to one terminal of the first transistor and one terminal of the second transistor. The second transistor has a channel region including an oxide semiconductor.

公开(公告)号：US20180357964A1

公开(公告)日：2018-12-13

申请号：US16005358

申请日：2018-06-11

申请人： LG Display Co., Ltd.

发明人： Sungsoo SHIN ,  Sohee CHOI ,  Yewon Hong

IPC分类号： G09G3/3258 ,  H01L27/32

CPC分类号： G09G3/3258 ,  G09G2300/0819 ,  G09G2310/0289 ,  G09G2310/08 ,  G09G2320/0219 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/78675 ,  H01L29/7869

摘要： An electroluminescent display including pixels arranged in a matrix is disclosed. Each pixel includes a pixel circuit configured to sample a threshold voltage of a driving element for driving a light emitting element and compensate for a data voltage. The pixel circuit includes a first switch element connected to a data voltage path supplied with the data voltage, a second switch element connected to a reference voltage path supplied with a predetermined reference voltage, a third switch element connected between a gate of the driving element and the first and second switch elements, a fourth switch element connected to an initialization voltage path supplied with a predetermined initialization voltage, and a fifth switch element connected to a power path supplied with a predetermined pixel driving voltage higher than the reference voltage and the initialization voltage.

公开(公告)号：US20180308984A1

公开(公告)日：2018-10-25

申请号：US15571553

申请日：2017-05-05

申请人： BOE Technology Group Co., Ltd.

发明人： Wei Liu ,  Jingang Fang

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L21/383 ,  H01L29/66 ,  H01L29/24 ,  G02F1/1368 ,  G02F1/167 ,  G02F1/1335

CPC分类号： H01L29/78618 ,  G02F1/133514 ,  G02F1/1368 ,  G02F1/167 ,  G02F2201/123 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/34 ,  H01L21/383 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869

摘要： A thin film transistor and a manufacturing method thereof, an array substrate and a display device. The manufacturing method of the thin film transistor includes: providing a substrate; depositing an active layer film, a gate insulator layer film, and a gate metal layer film on the substrate in sequence, patterning the active layer film, the gate insulator layer film, and the gate metal layer film to form an active layer, a gate insulator layer and a gate metal layer respectively, and depositing an insulator layer film at a first temperature and patterning the insulator layer film to form an insulator layer; a portion of the active layer, which portion is not overlapped with the gate metal layer, is treated to become conductive to provide a conductor during deposition of the insulator layer film.