公开(公告)号：US20060282717A1

公开(公告)日：2006-12-14

申请号：US11228290

申请日：2005-09-19

申请人： Takaya Suda

发明人： Takaya Suda

IPC分类号： G01R31/28

CPC分类号： G11C7/1006 ,  G06F11/1068 ,  G11C16/26 ,  G11C2207/104

摘要： A memory device used attach to a host system includes a nonvolatile memory including a plurality of blocks, each of the blocks being a unit for data erasure and including a plurality of pages, each of the pages including a data section which stores first data supplied from the host system, and a redundancy section which stores at least second data used to manage the first data, a detection circuit which generates a first code used to detect a first error contained in the second data, and detects the first error based on the first code, and a correction circuit which generates a second code used to detect and correct a second error contained in the first data and the second data, and detects and corrects the second error based on the second code.

摘要翻译： 使用的连接到主机系统的存储器件包括包括多个块的非易失性存储器，每个块是用于数据擦除的单元，并且包括多个页面，每个页面包括数据部分，其存储从 所述主机系统和至少存储用于管理所述第一数据的第二数据的冗余部分，生成用于检测包含在所述第二数据中的第一错误的第一代码的检测电路，并且基于所述第一数据检测所述第一错误 代码和校正电路，其生成用于检测和校正包含在第一数据和第二数据中的第二错误的第二代码，并且基于第二代码来检测和校正第二错误。

公开(公告)号：US20060187738A1

公开(公告)日：2006-08-24

申请号：US11408021

申请日：2006-04-21

申请人： Takaya Suda ,  Hiroaki Muraoka

发明人： Takaya Suda ,  Hiroaki Muraoka

IPC分类号： G11C8/00

CPC分类号： G11C16/102 ,  G11C16/16

摘要： A memory management device for managing a nonvolatile semiconductor memory which comprises a plurality of blocks, and permits data to be erased in units of one block, the memory management device comprises a setting unit configured to set an address range of data to be erased in response to an erase command in a block in which the data to be erased is written, when the erase command is issued with respect to the nonvolatile semiconductor memory and a controlling unit configured to output initial-value data as data to be read in response to a data read command, when the data read command is issued with respect to the nonvolatile semiconductor memory, and then when an address range of the data to be read in response to the data read command is included in the address range set by the setting unit.

摘要翻译： 一种用于管理非易失性半导体存储器的存储器管理装置，其包括多个块，并且允许以一个块为单位擦除数据，所述存储器管理装置包括：设置单元，被配置为响应于设置要被擦除的数据的地址范围 在写入要擦除的数据的块中的擦除命令时，当相对于非易失性半导体存储器发出擦除命令时，以及控制单元被配置为输出初始值数据作为响应于要读取的数据 数据读取命令，当相对于非易失性半导体存储器发出数据读取命令时，然后当由设置单元设置的地址范围中包括响应于数据读取命令要读取的数据的地址范围时。

公开(公告)号：US20060059295A1

公开(公告)日：2006-03-16

申请号：US11022857

申请日：2004-12-28

申请人： Takaya Suda ,  Hiroaki Muraoka

发明人： Takaya Suda ,  Hiroaki Muraoka

IPC分类号： G06F12/00

CPC分类号： G11C16/102 ,  G11C16/16

摘要： A memory management device for managing a nonvolatile semiconductor memory which comprises a plurality of blocks, and permits data to be erased in units of one block, the memory management device comprises a setting unit configured to set an address range of data to be erased in response to an erase command in a block in which the data to be erased is written, when the erase command is issued with respect to the nonvolatile semiconductor memory and a controlling unit configured to output initial-value data as data to be read in response to a data read command, when the data read command is issued with respect to the nonvolatile semiconductor memory, and then when an address range of the data to be read in response to the data read command is included in the address range set by the setting unit.

摘要翻译： 一种用于管理非易失性半导体存储器的存储器管理装置，其包括多个块，并且允许以一个块为单位擦除数据，所述存储器管理装置包括：设置单元，被配置为响应于设置要被擦除的数据的地址范围 在写入要擦除的数据的块中的擦除命令时，当相对于非易失性半导体存储器发出擦除命令时，以及控制单元被配置为输出初始值数据作为响应于要读取的数据 数据读取命令，当相对于非易失性半导体存储器发出数据读取命令时，然后当由设置单元设置的地址范围中包括响应于数据读取命令要读取的数据的地址范围时。