公开(公告)号：US20060131585A1

公开(公告)日：2006-06-22

申请号：US11285935

申请日：2005-11-23

申请人： Dong-Byum Kim ,  Chung Yi

发明人： Dong-Byum Kim ,  Chung Yi

IPC分类号： H01L29/786

CPC分类号： H01L27/1285 ,  H01L27/1296 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/78621 ,  H01L29/78645 ,  H01L51/56

摘要： A thin film transistor array panel is provided, which includes a substrate; a plurality of semiconductor islands formed on the substrate, the plurality of semiconductor islands including a plurality of first and second extrinsic regions, and a plurality of intrinsic regions; a gate insulating layer covering the semiconductor islands; a plurality of gate lines including a plurality of gate electrodes overlapping the intrinsic regions and formed on the gate insulating layer; a plurality of data lines connected to the first extrinsic regions and formed on the gate insulating layer; and a plurality of pixel electrodes connected to the second extrinsic regions, wherein a plurality of protrusions are formed on the surfaces of the semiconductor islands, and a length of a semiconductor island is a multiple of the a distance between at least two protrusions.

摘要翻译： 提供薄膜晶体管阵列面板，其包括基板; 形成在所述基板上的多个半导体岛，所述多个半导体岛包括多个第一和第二非本征区域以及多个固有区域; 覆盖半导体岛的栅极绝缘层; 多个栅极线，包括与所述本征区域重叠并形成在所述栅极绝缘层上的多个栅电极; 连接到第一非本征区并形成在栅极绝缘层上的多条数据线; 以及连接到第二非本征区域的多个像素电极，其中在半导体岛的表面上形成多个突起，并且半导体岛的长度是至少两个突起之间的距离的倍数。