公开(公告)号：US20080203478A1

公开(公告)日：2008-08-28

申请号：US12035519

申请日：2008-02-22

申请人： Dima Prikhodko ,  Jerod F. Mason ,  Gouliang Zhou ,  Gene A. Tkachenko ,  Steven C. Sprinkle ,  Oleksiy Klimashov

发明人： Dima Prikhodko ,  Jerod F. Mason ,  Gouliang Zhou ,  Gene A. Tkachenko ,  Steven C. Sprinkle ,  Oleksiy Klimashov

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/423 ,  H01L23/481 ,  H01L23/642 ,  H01L23/66 ,  H01L24/48 ,  H01L29/1075 ,  H01L29/407 ,  H01L29/66462 ,  H01L29/7787 ,  H01L2223/6644 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A switch element includes a field effect transistor (FET) structure formed on a substrate, the FET structure having a drain, a gate and a source, the drain having a drain capacitance, the gate having a gate capacitance, the source having a source capacitance and an electrical connection to couple the drain capacitance, gate capacitance and the source capacitance to the substrate.

摘要翻译： 开关元件包括形成在衬底上的场效应晶体管（FET）结构，所述FET结构具有漏极，栅极和源极，所述漏极具有漏极电容，所述栅极具有栅极电容，所述源极具有源极电容 以及将漏极电容，栅极电容和源极电容耦合到衬底的电连接。