公开(公告)号：US11942468B2

公开(公告)日：2024-03-26

申请号：US17303251

申请日：2021-05-25

申请人： Cirrus Logic International Semiconductor Ltd.

发明人： Aleksey Khenkin ,  Justin Richardson ,  Michael Robinson ,  David Patten

IPC分类号： H03F3/195 ,  H01L21/78 ,  H01L23/498 ,  H01L23/66 ,  H01L27/02 ,  H03F3/187 ,  H03F3/45

CPC分类号： H01L27/0207 ,  H01L21/78 ,  H01L23/49816 ,  H01L23/66 ,  H03F3/187 ,  H03F3/45475 ,  H01L2223/6644 ,  H03F2200/03

摘要： A packaged semiconductor die may include a package terminal array comprising a plurality of terminals, wherein a spacing between the plurality of terminals of the ball grid array is less than 0.5 mm. First and second high-voltage circuits of the die may output a differential signal to a first and second terminal that may exceed 15 volts, in which the first high-voltage circuit and the second high-voltage circuit are positioned symmetrically around an axis and in which the first terminal and the second terminal are located at an edge of the package terminal array. A low-voltage circuit may be coupled to a third terminal and positioned between the first high-voltage circuit and the second high-voltage circuit, wherein the low-voltage circuit comprises circuitry organized in columns aligned along an axis and having a width defined by a fraction of the terminal spacing pitch.

公开(公告)号：US20230402410A1

公开(公告)日：2023-12-14

申请号：US18315515

申请日：2023-05-11

申请人： NXP B.V.

发明人： Mustafa Acar ,  Paul Mattheijssen ,  Philipp Franz Freidl ,  Rajesh Mandamparambil ,  Jan Willem Bergman

IPC分类号： H01L23/66 ,  H01L25/16

CPC分类号： H01L23/66 ,  H01L25/16 ,  H01L2223/6644

摘要： An RF package assembly includes a stacked package-on-package arrangement of a first substrate and a second substrate. Each of the first and second substrates include RF signal pads and ground pads. An interface region between the stacked substrates couples the RF signal pads and ground pads of the first substrate to corresponding pads of the second substrate. The interface region includes galvanic connection regions providing a galvanic connection between the each of the first substrate ground pads and each of the corresponding second substrate ground pads. The interface region includes dielectric regions between each of the first substrate RF signal pads and the corresponding second substrate RF signal pads so that RF signals transmitted between the two substrates are capacitively coupled.

公开(公告)号：US11791389B2

公开(公告)日：2023-10-17

申请号：US17144346

申请日：2021-01-08

申请人： Wolfspeed, Inc.

发明人： Kyle Bothe ,  Jia Guo ,  Jeremy Fisher ,  Scott Sheppard

IPC分类号： H01L29/417 ,  H01L23/66 ,  H01L29/20 ,  H01L29/40 ,  H01L29/778 ,  H03F3/195 ,  H03F3/213

CPC分类号： H01L29/41775 ,  H01L23/66 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/7786 ,  H03F3/195 ,  H03F3/213 ,  H01L2223/6644 ,  H01L2223/6683 ,  H03F2200/451

摘要： A gallium nitride-based RF transistor amplifier comprises a semiconductor layer structure comprising a barrier layer on a channel layer, first and second source/drain regions in the semiconductor layer structure, first and second source/drain contacts on the respective first and second source/drain regions, and a longitudinally-extending gate finger that is between the first and second source/drain contacts. The first and second source/drain contacts each has an inner sidewall that faces the gate finger and an opposed outer sidewall. The first source/drain region extends a first distance from a lower edge of the inner sidewall of the first source/drain contact towards the second source/drain region along a transverse axis that extends parallel to a plane defined by the upper surface of the semiconductor layer structure, and extends a second, smaller distance from a lower edge of the outer sidewall of the first source/drain contact away from the second source/drain region.

公开(公告)号：US11784108B2

公开(公告)日：2023-10-10

申请号：US16533152

申请日：2019-08-06

申请人： Intel Corporation

发明人： Feras Eid ,  Telesphor Kamgaing ,  Georgios Dogiamis ,  Aleksandar Aleksov ,  Johanna M. Swan

IPC分类号： H01L23/427 ,  H01L23/38 ,  H01L23/373 ,  H01L23/31 ,  H01L23/48 ,  H01L25/16 ,  H01L23/66 ,  H03H9/46 ,  H03H9/05

CPC分类号： H01L23/427 ,  H01L23/3157 ,  H01L23/373 ,  H01L23/38 ,  H01L23/481 ,  H01L23/66 ,  H03H9/46 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/6677

摘要： Disclosed herein are structures and assemblies that may be used for thermal management in integrated circuit (IC) packages.

公开(公告)号：US11764172B2

公开(公告)日：2023-09-19

申请号：US17586940

申请日：2022-01-28

申请人： Murata Manufacturing Co., Ltd.

发明人： Hiroshi Nishikawa

IPC分类号： H03F3/14 ,  H03F1/56 ,  H03F3/191 ,  H03G3/20 ,  H03G5/16 ,  H01L23/66 ,  H04B1/40 ,  H01L25/00 ,  H01P1/15 ,  H01L25/16

CPC分类号： H01L23/66 ,  H01L25/00 ,  H01P1/15 ,  H04B1/40 ,  H01L25/16 ,  H01L2223/6644 ,  H01L2223/6661

摘要： An integrated circuit (IC) includes a first switch, a second switch, an amplifier electrically connected between the first switch and the second switch, and a base. The first switch, the second switch, and the amplifier are provided on the base. In a top view of the base, the amplifier is disposed between the first switch and the second switch.

公开(公告)号：US10347571B1

公开(公告)日：2019-07-09

申请号：US15865745

申请日：2018-01-09

申请人： MACOM Technology Solutions Holdings, Inc.

发明人： Andrzej Rozbicki ,  Chi Mo ,  Cristiano Bazzani

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/66 ,  H01L23/495 ,  H01L23/498 ,  H01L23/528 ,  H01L23/552

CPC分类号： H01L23/49811 ,  H01L23/3121 ,  H01L23/4952 ,  H01L23/49568 ,  H01L23/528 ,  H01L23/552 ,  H01L23/66 ,  H01L24/46 ,  H01L24/49 ,  H01L2223/6605 ,  H01L2223/6644

摘要： In one example, a device having integrated package interference isolation includes a ground pad, an integrated circuit device die secured to the ground pad, a substrate secured to the ground pad, at least one a high-frequency, high-power semiconductor device secured to a top mounting surface of the substrate. For electromagnetic isolation, the integrated circuit device die includes a top metal, and the substrate includes a metal via electrically coupled to a metal trace that extends on the top mounting surface of the substrate. The device package also includes a number of ground pad bonding wires that electrically couple the redistribution layer of the integrated circuit device die and the metal trace to the ground pad. The redistribution layer of the integrated circuit device die and the metal trace and via of the substrate help to shield electromagnetic radiation between components in the device package.

公开(公告)号：US20180374781A1

公开(公告)日：2018-12-27

申请号：US16015631

申请日：2018-06-22

申请人： Kyocera International, Inc.

发明人： Franklin KIM ,  Mark EBLEN ,  Shinichi HIRA

IPC分类号： H01L23/495 ,  H01L23/367 ,  H01L23/04 ,  H01L23/08 ,  H01L21/48

CPC分类号： H01L23/49541 ,  H01L21/4839 ,  H01L21/4871 ,  H01L23/041 ,  H01L23/08 ,  H01L23/36 ,  H01L23/367 ,  H01L23/5389 ,  H01L2223/6644 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/15 ,  H01L2924/00014

摘要： Package deflection and mechanical stress of microelectronic packaging is minimized in a two step manufacturing process. In a first step, a ceramic insulator is high-temperature bonded between a wraparound lead layer and a buffer layer of a same material as the lead layer to provide a symmetrically balanced three-layer structure. In a second step, the three-layer structure is high temperature bonded, using a lower melt point braze, to a heat spreader. This package configuration minimizes package deflection, and thereby improves thermal dissipation and reliability of the package.

公开(公告)号：US20180316319A1

公开(公告)日：2018-11-01

申请号：US15584000

申请日：2017-05-01

申请人： QUALCOMM Incorporated

发明人： Daeik Daniel KIM ,  Shu ZHANG ,  Bonhoon KOO ,  Manuel ALDRETE ,  Jie FU ,  Chin-Kwan KIM ,  Babak NEJATI ,  Husnu Ahmet MASARACIOGLU

IPC分类号： H03F1/52 ,  H03F3/189 ,  H03F3/20 ,  H03F1/56 ,  H01L23/498 ,  H01L23/552 ,  H01L23/66 ,  H01L23/00 ,  H01L23/12

CPC分类号： H01L23/12 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/6677 ,  H01L2224/16237 ,  H01L2224/48106 ,  H01L2224/48228 ,  H01L2224/48235 ,  H01L2224/49175

摘要： In exemplary aspects of the disclosure, magnetic coupling problems in a power amplifier/antenna circuit may be address by using a self-shielded RF inductor mounted over the PA output match inductor embedded in the substrate to offer full RF isolation of both PA output match inductors (self-shielded and embedded) or using a self-shielded RF inductor mounted over the PA output match inductor embedded in the substrate along with a component level conformal shield around the self-shielded inductor on the assembly structure.

公开(公告)号：US20180254253A1

公开(公告)日：2018-09-06

申请号：US15973276

申请日：2018-05-07

申请人： Infineon Technologies AG

发明人： Xikun Zhang ,  Dejiang Chang ,  Bill Agar ,  Michael Lefevre ,  Alexander Komposch

IPC分类号： H01L23/66 ,  H01L23/495 ,  H01L23/498 ,  H01L23/00 ,  H01L25/07 ,  H01L25/00 ,  H01L29/16

CPC分类号： H01L23/66 ,  H01L23/49503 ,  H01L23/49568 ,  H01L23/49575 ,  H01L23/49844 ,  H01L24/27 ,  H01L24/32 ,  H01L24/83 ,  H01L25/072 ,  H01L25/50 ,  H01L29/16 ,  H01L2223/6644 ,  H01L2223/6672 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/83136 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/13091 ,  H01L2924/19041

摘要： A multi-die package includes a thermally conductive flange, a first semiconductor die made of a first semiconductor material attached to the thermally conductive flange via a first die attach material, a second semiconductor die attached to the same thermally conductive flange as the first semiconductor die via a second die attach material, and leads attached to the thermally conductive flange or to an insulating member secured to the flange. The leads are configured to provide external electrical access to the first and second semiconductor dies. The second semiconductor die is made of a second semiconductor material different than the first semiconductor material. Additional multi-die package embodiments are described.

公开(公告)号：US10020269B2

公开(公告)日：2018-07-10

申请号：US15137634

申请日：2016-04-25

申请人： Skyworks Solutions, Inc.

发明人： Kim Rene Smith ,  Paul T. DiCarlo ,  Michael David Hill

IPC分类号： H01L23/60 ,  H01L23/66 ,  H01L29/872 ,  H01L29/66 ,  H01L23/00 ,  H01L27/02 ,  H01L25/18 ,  H01L29/868 ,  H04B1/16 ,  H01L29/861

CPC分类号： H01L23/66 ,  H01L23/60 ,  H01L24/03 ,  H01L24/05 ,  H01L25/18 ,  H01L27/0255 ,  H01L27/0292 ,  H01L29/6609 ,  H01L29/66143 ,  H01L29/861 ,  H01L29/868 ,  H01L29/872 ,  H01L2223/6644 ,  H01L2223/6677 ,  H01L2223/6683 ,  H01L2224/05554 ,  H01L2924/10329 ,  H01L2924/12031 ,  H01L2924/12032 ,  H01L2924/1205 ,  H01L2924/1306 ,  H01L2924/1423 ,  H01L2924/30205 ,  H04B1/16 ,  H01L2924/00

摘要： Disclosed are systems, devices and methods for providing electrostatic discharge (ESD) protection for integrated circuits. In some implementations, first and second conductors with ohmic contacts on an intrinsic semiconductor region can function similar to an x-i-y type diode, where each of x and y can be n-type or p-type. Such a diode can be configured to turn on under selected conditions such as an ESD event. Such a structure can be configured so as to provide an effective ESD protection while providing little or substantially nil effect on radio-frequency (RF) operating properties of a device.