-
21.发明授权Method of utilizing a multiple emitter solid state laser in a raster output scanner (ROS) 失效在光栅输出扫描器（ROS）中利用多发射体固态激光器的方法
公开(公告)号：US4796964A
公开(公告)日：1989-01-10
申请号：US165700
申请日：1988-03-09
CPC分类号： G06K15/1209 , G06K15/1261 , H04N1/1911 , H04N1/1135
摘要： Plural overlapped Gaussian-shaped solid state semiconductor laser beams are focused onto the recording medium surface of a printer and will not optically interfere and cause any nonuniformity in printing due to optical interference because the respective laser beams are sequenced in ON/OFF operation so that relative to two or more overlapping laser beam spots focused to a recording medium surface, only one laser beam will be ON at any given time.
摘要翻译： 多个重叠的高斯形固态半导体激光束被聚焦到打印机的记录介质表面上，并且由于各个激光束在ON / OFF操作中被排序，所以不会由于光学干涉而光学地干涉并导致打印中的不均匀性，从而相对 对于聚焦到记录介质表面的两个或更多个重叠的激光束斑点，在任何给定时间仅一个激光束将为ON。
-
公开(公告)号：US4575194A
公开(公告)日：1986-03-11
申请号：US593210
申请日：1984-03-26
CPC分类号： G02B6/4206 , G02B19/0014 , G02B19/0052 , G02B27/09 , G02B27/0994 , G02B3/0087
摘要： An improved collimating and conversion means is provided in a single system component that can be easily formed in a cost effective manner to convert an elliptically shaped collimated beam into a circular beam. The single component of this invention is a semiconductor laser beam collimator comprising means for collimating an output beam of radiation emitted from a semiconductor laser having a substantially elliptical cross sectional configuration and converting the emitted beam of radiation into a beam of circular cross sectional configuration, the means characterized by consisting of a graded-index (GRIN) rod or fiber with one end of the rod being beveled at an angle. The length of the GRIN rod bevel and the bevel angle are chosen according to the particular diameter and optical power of the emitted beam of the semiconductor laser.
摘要翻译： 在单个系统部件中提供改进的准直和转换装置，其可以以成本有效的方式容易地形成以将椭圆形准直光束转换成圆形光束。 本发明的单个部件是半导体激光束准直器，其包括用于对从半导体激光器发射的辐射的输出光束进行准直的装置，该半导体激光器具有基本椭圆形的横截面结构，并将发射的辐射束转换成圆形横截面形状的光束， 其特征在于由渐变折射率（GRIN）杆或纤维组成，杆的一端以一定角度倾斜。 根据半导体激光器的发射光束的特定直径和光功率，选择GRIN杆斜面的长度和斜角。
-
23.发明授权Apertured and unapertured reflector structures for electroluminescent devices 失效用于电致发光器件的有孔和未孔径的反射器结构
公开(公告)号：US4280107A
公开(公告)日：1981-07-21
申请号：US64698
申请日：1979-08-08
摘要： A multilayered reflector structure deposited on the light emitting surface of a semiconductor electroluminescent device and consecutively comprising a layer of low refractive index material, a layer of intermediate refractive index material and a layer of high refractive index material. Ablative means remove and form an aperture in the outer high index layer at the region of optical radiation emission from said device whereby the level of reflectivity is highest at the center of the aperture as compared to structure regions adjacent to the aperture. In this manner, fundamental mode stabilization may be achieved. Also disclosed is a nonablated three layered reflector structure.
摘要翻译： 沉积在半导体电致发光器件的发光表面上并且连续地包含低折射率材料层，中间折射率材料层和高折射率材料层的多层反射器结构。 烧蚀装置在来自所述装置的光辐射区域处移除并形成外部高折射率层中的孔，从而与邻近孔的结构区域相比，在孔的中心处的反射率水平最高。 以这种方式，可以实现基模稳定。 还公开了一种未布置的三层反射器结构。
-
-
搜索结果
23 条记录 (耗时 0.04 秒)
