ESTIMATION OF LEVEL-THRESHOLDS FOR MEMORY CELLS
    22.
    发明申请
    ESTIMATION OF LEVEL-THRESHOLDS FOR MEMORY CELLS 有权
    记忆细胞水平阈值的估计

    公开(公告)号:US20150085591A1

    公开(公告)日:2015-03-26

    申请号:US14489983

    申请日:2014-09-18

    IPC分类号: G11C29/02

    摘要: Methods and apparatus are provided for determining level-thresholds for q-level memory cells. A plurality of the memory cells are read to obtain respective read signal components. The read signal components are processed in dependence on signal level to produce a signal level vector, comprising a series of elements, indicative of the distribution of read signal components in order of signal level. The signal level vector is scanned with a sliding window of length greater than the spacing of successive window positions in the scan. At each window position, a metric Mi is calculated in dependence on the elements of the signal level vector in the window. A level-threshold for successive memory cell levels is then determined in dependence on variation of the metric over the scan.

    摘要翻译: 提供了用于确定q级存储器单元的电平阈值的方法和装置。 读取多个存储器单元以获得相应的读取信号分量。 根据信号电平对读出的信号分量进行处理以产生信号电平矢量,该信号电平矢量包括指示信号电平顺序的读取信号分量分布的一系列元件。 信号电平矢量用长度大于扫描中连续窗口位置的间距的滑动窗扫描。 在每个窗口位置,根据窗口中的信号电平矢量的元素来计算度量Mi。 然后根据扫描上的度量的变化来确定连续存储器单元级的电平阈值。