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    DATA ENCODING IN SOLID-STATE STORAGE DEVICES
    3.
    发明申请
    DATA ENCODING IN SOLID-STATE STORAGE DEVICES 有权
    固态存储设备中的数据编码

    公开(公告)号：US20110296274A1

    公开(公告)日：2011-12-01

    申请号：US13097402

    申请日：2011-04-29

    申请人： Thomas Mittelholzer ,  Nikolaos Papandreou ,  Charalampos Pozidis

    发明人： Thomas Mittelholzer ,  Nikolaos Papandreou ,  Charalampos Pozidis

    IPC分类号： G06F11/10

    CPC分类号： G06F11/1072

    摘要： Methods and apparatus are provided for recording input data in q-level cells of solid-state memory (2), where q>2. Input data words are encoded as respective codewords, each having a plurality of symbols. The coding scheme is such that each symbol can take one of q values corresponding to respective predetermined levels of the q-level cells, and each of the possible input data words is encoded as a codeword with a unique sequence of relative symbol values. The symbols of each codeword are then recorded in respective cells of the solid-state memory by setting each cell to the level corresponding to the recorded symbol value. Input data is thus effectively encoded in the relative positions of cell levels, providing resistance to certain effects of drift noise.

    摘要翻译： 提供方法和装置用于在q> 2的固态存储器（2）的q级单元中记录输入数据。 输入数据字被编码为各自具有多个符号的码字。 编码方案使得每个符号可以采用与q级单元的各个预定级别相对应的q个值中的一个，并且每个可能的输入数据字被编码为具有唯一的相对符号值序列的码字。 然后通过将每个单元设置为与记录的符号值对应的电平，将每个码字的符号记录在固态存储器的相应单元中。 因此，输入数据被有效地编码在单元电平的相对位置，提供对漂移噪声的某些影响的抵抗。

    Data encoding in solid-state storage devices
    4.
    发明授权
    Data encoding in solid-state storage devices 有权
    固态存储设备中的数据编码

    公开(公告)号：US08578246B2

    公开(公告)日：2013-11-05

    申请号：US13097402

    申请日：2011-04-29

    申请人： Thomas Mittelholzer ,  Nikolaos Papandreou ,  Charalampos Pozidis

    发明人： Thomas Mittelholzer ,  Nikolaos Papandreou ,  Charalampos Pozidis

    IPC分类号： G11C29/00 ,  H03M13/00

    CPC分类号： G06F11/1072

    摘要： Methods and apparatus are provided for recording input data in q-level cells of solid-state memory (2), where q>2. Input data words are encoded as respective codewords, each having a plurality of symbols. The coding scheme is such that each symbol can take one of q values corresponding to respective predetermined levels of the q-level cells, and each of the possible input data words is encoded as a codeword with a unique sequence of relative symbol values. The symbols of each codeword are then recorded in respective cells of the solid-state memory by setting each cell to the level corresponding to the recorded symbol value. Input data is thus effectively encoded in the relative positions of cell levels, providing resistance to certain effects of drift noise.

    摘要翻译： 提供方法和装置用于在q> 2的固态存储器（2）的q级单元中记录输入数据。 输入数据字被编码为各自具有多个符号的码字。 编码方案使得每个符号可以采用与q级单元的各个预定级别相对应的q个值中的一个，并且每个可能的输入数据字被编码为具有唯一的相对符号值序列的码字。 然后通过将每个单元设置为与记录的符号值对应的电平，将每个码字的符号记录在固态存储器的相应单元中。 因此，输入数据被有效地编码在单元电平的相对位置，提供对漂移噪声的某些影响的抵抗。

    CELL-STATE MEASUREMENT IN RESISTIVE MEMORY
    7.
    发明申请
    CELL-STATE MEASUREMENT IN RESISTIVE MEMORY 审中-公开
    电阻记忆体中的细胞状态测量

    公开(公告)号：US20120230081A1

    公开(公告)日：2012-09-13

    申请号：US13415127

    申请日：2012-03-08

    申请人： Gael Close ,  Christoph Hagleitner ,  Angeliki Pantazi ,  Nikolaos Papandreou ,  Charalampos Pozidis ,  Abu Sebastian

    发明人： Gael Close ,  Christoph Hagleitner ,  Angeliki Pantazi ,  Nikolaos Papandreou ,  Charalampos Pozidis ,  Abu Sebastian

    IPC分类号： G11C11/00

    CPC分类号： G11C5/147 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0061 ,  G11C2211/5645

    摘要： Apparatus and method for measuring the state of a resistive memory cell. A bias voltage controller applies a bias voltage to the cell and controls the level of the bias voltage. A feedback signal generator senses cell current due to the bias voltage and generates a feedback signal (SFB) dependent on the difference between the cell current and a predetermined target current. The bias voltage controller controls the bias voltage level in dependence on the feedback signal (SFB) such that the cell current converges on the target current. An output is provided indicative of the bias voltage level at which the cell current corresponds to the target current, thus providing a voltage-based metric for cell-state.

    摘要翻译： 用于测量电阻式存储单元的状态的装置和方法。 偏置电压控制器向电池施加偏置电压并控制偏置电压的电平。 反馈信号发生器由于偏置电压而感测电池电流，并且根据电池电流和预定目标电流之间的差产生反馈信号（SFB）。 偏置电压控制器根据反馈信号（SFB）控制偏置电压电平，使得电池电流收敛于目标电流。 提供指示电池电流对应于目标电流的偏置电压电平的输出，从而为电池状态提供基于电压的度量。