Abstract:
The invention provides a hydraulic inerter mechanism, including: a hydraulic cylinder; a hydraulic motor connected to the hydraulic cylinder, with an output shaft thereon for converting the motion of the hydraulic cylinder from rectilinear motion to rotary motion; and an inertia body disposed on the output shaft. In operation, an external force applied to the inerter mechanism causes displacement of the piston, thereby pushing working fluid inside the hydraulic cylinder to generate a pressure difference between an inlet and an outlet of a hydraulic motor. The differential pressure consequently drives the hydraulic motor to rotate, and then the output shaft further drives the inertia body to rotate, thereby attaining inerter characteristics.
Abstract:
A screw type inerter mechanism includes a screw with a limit portion and a thread portion with threads; a screw cap engaged with the thread portion of the screw; an inertia body fixed to the limit portion of the screw; and a connection body engaged with the limit portion of the screw wherein an axial of the screw serves as a rotation axial for the screw to rotate relatively to the connection body. Thus, when a non-zero external force is applied to the inerter mechanism to generate relative horizontal displacement between the screw cap and the connection body, the screw cap brings the screw to rotate, which further brings the inertia body to rotate, thereby achieving the inerter features.
Abstract:
The source/drain zones (140 and 142 or 160 and 162) of a p-channel IGFET (120 or 122) are provided with graded-junction characteristics to reduce junction capacitance, thereby increasing switching speed. Each source/drain zone contains a main portion (140M, 142M, 160M, or 162M) and a more lightly doped lower portion (140L, 142L, 160L, or 162L) underlying, and vertically continuous with, the main portion.
Abstract:
An IGFET (40 or 42) has a channel zone (64 or 84) situated in body material (50). Short-channel threshold voltage roll-off and punchthrough are alleviated by arranging for the net dopant concentration in the channel zone to longitudinally reach a local surface minimum at a location between the IGFET's source/drain zones (60 and 62 or 80 and 82) and by arranging for the net dopant concentration in the body material to reach a local subsurface maximum more than 0.1 &mgr;m deep into the body material but not more than 0.4 &mgr;m deep into the body material.