公开(公告)号：US20130280873A1

公开(公告)日：2013-10-24

申请号：US13793401

申请日：2013-03-11

Applicant: GLOBALFOUNDRIES INC.

Inventor： Elke Erben ,  Martin Trentzsch ,  Richard Carter ,  Carsten Grass

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L21/02181 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/28079 ,  H01L21/28194 ,  H01L28/40 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66477

Abstract: When forming sophisticated circuit elements, such as transistors, capacitors and the like, using a combination of a conventional dielectric material and a high-k dielectric material, superior performance and reliability may be achieved by forming a hafnium oxide-based high-k dielectric material on a conventional dielectric layer with a preceding surface treatment, for instance using APM at room temperature. In this manner, sophisticated transistors of superior performance and with improved uniformity of threshold voltage characteristics may be obtained, while also premature failure due to dielectric breakdown, hot carrier injection and the like may be reduced.

Abstract translation: 当形成诸如晶体管，电容器等的复杂电路元件时，通过使用常规电介质材料和高k电介质材料的组合，可以通过形成基于氧化铪的高k电介质材料来实现优异的性能和可靠性 在具有前面表面处理的常规电介质层上，例如在室温下使用APM。 以这种方式，可以获得具有优异性能并具有改善的阈值电压特性均匀性的复杂晶体管，同时由于介电击穿，热载流子注入等而导致的过早故障也可能被降低。